HTIP117 EPITAXIAL PLANAR TRANSISTOR Description HTIP117

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

HTIP117 EPITAXIAL PLANAR TRANSISTOR Description HTIP117

Datasheet Thumbnail

Top Searches for this datasheet

Spec. HE200204 Issued Date 2000.08.01 Revised Date 2002.01.18 Page
HTIP117
EPITAXIAL PLANAR TRANSISTOR
Description
HTIP117 designed general purpose amplifier lowspeed switching applications.
Absolute Maximum Ratings (Ta=25°C)
TO-220
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C). Total Power Dissipation (Ta=25°C). Maximum Voltages Currents BVCBO Collector Base Voltage -100 BVCEO Collector Emitter Voltage -100 BVEBO Emitter Base Voltage Collector Current (Continue). Collector Current (Peak).
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO ICBO ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 Min. -100 -100 Typ. Max. -2.5 -2.8 Unit Test Conditions IC=-1mA IC=-30mA VCB=-100V VCE=-50V VEB=-5V IC=-2A, IB=-8mA IC=-2A, VCE=-4V IC=-1A, VCE=-4V IC=-2A, VCE=-4V VCB=-10V, f=0.1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Darlington Schematic
HTIP117
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
100000 10000
Spec. HE200204 Issued Date 2000.08.01 Revised Date 2002.01.18 Page
Saturation Voltage Collcetor Current
10000
Saturation Voltage (mV)
1000
1000
VCE=4V 1000 10000
VCE(sat) IC=250IB
1000
10000
Collector Current (mA)
Collector Current (mA)
Voltage Collector Current
10000
Switching Time Collector Current
VCC=30V, IC=250IB1= -250IB2
1000
Switching Time (us)
Voltage (mV)
Tstg
VBE(ON) VCE=4V 1000 10000
Collector Current (mA)
Collector Current-IC
Capacitance Revierse-Biased Voltage
1000
Safe Operating Area
100000 PT=1ms 10000
Collector Current-IC (mA)
PT=100ms 1000
Capacitance (pF)
PT=1s
Reverse-Biased Voltage
Forward Voltage-VCE
HTIP117
HSMC Product Specification
TO-220AB Dimension
Marking:
Date Code
Spec. HE200204 Issued Date 2000.08.01 Revised Date 2002.01.18 Page
Control Code
Style: 1.Base 2.Collector 3.Emitter
3-Lead TO-220AB Plastic Package HSMC Package Code: Typical
Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398
Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25
Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248
Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87
Notes: 1.Dimension tolerance based Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material:
Lead: Alloy; solder plating Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HTIP117
HSMC Product Specification

HTIP117 EPITAXIAL PLANAR TRANSISTOR Description HTIP117

Top Searches for this datasheet

Other recent searches