HTIP112 EPITAXIAL PLANAR TRANSISTOR Description HTIP112

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HTIP112 EPITAXIAL PLANAR TRANSISTOR Description HTIP112

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Spec. HE200203 Issued Date 2000.08.01 Revised Date 2002.03.28 Page
HTIP112
EPITAXIAL PLANAR TRANSISTOR
Description
HTIP112 designed general purpose amplifier lowspeed switching applications.
Absolute Maximum Ratings (Ta=25°C)
TO-220
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C). Total Power Dissipation (Ta=25°C). Maximum Voltages Currents BVCBO Collector Base Voltage BVCEO Collector Emitter Voltage BVEBO Emitter Base Voltage Collector Current (Continue) Collector Current (Peak).
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO ICBO ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 Min. Typ. Max. Unit Test Conditions IC=1mA IC=30mA VCB=100V VCE=50V VEB=5V IC=2A, IB=8mA IC=2A, VCE=4V IC=1A, VCE=4V IC=2A, VCE=4V VCB=10V, f=0.1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Darlington Schematic
HTIP112
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
10000 10000
Spec. HE200203 Issued Date 2000.08.01 Revised Date 2002.03.28 Page
Current Gain Collector Current
1000
1000
VCE=4V
VCE=3V
1000 10000
1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
10000 VCE(sat) IC=100IB 10000
Saturation Voltage Collector Current
VCE(sat) IC=250IB
Saturation Voltage (mV)
1000
Saturation Voltage (mV)
1000
1000
10000
1000
10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
10000 10000
Voltage Collcetor Current
Saturation Voltage (mV)
1000
Voltage (mV)
1000
VBE(sat) IC=250IB
VBE(ON) VCE=4V
1000
10000
1000
10000
Collector Current-IC (mA)
Collector Current-IC (mA)
HTIP112
HSMC Product Specification
Spec. HE200203 Issued Date 2000.08.01 Revised Date 2002.03.28 Page
Voltage Collcetor Current
10000
Switching Time Collector Current
VCC=30V,IC=250IB1= -250IB2
1000
Switching Times (us).
Tstg
Voltage (mV)
VBE(ON) VCE=3V
1000 10000
Collector Current-IC (mA)
Collector Current-IC
Capcitance Reverse-Biased Voltage
Safe Operating Area
PT=1mS PT=1S
Collector Current-IC
Capacitance (pF)
PT=100mS
0.01
Reverse Biased Voltage
Forward Voltage
HTIP112
HSMC Product Specification
TO-220AB Dimension
Marking:
Date Code
Spec. HE200203 Issued Date 2000.08.01 Revised Date 2002.03.28 Page
Control Code
Style: 1.Base 2.Collector 3.Emitter
3-Lead TO-220AB Plastic Package HSMC Package Code: Typical
Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398
Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25
Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248
Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87
Notes: 1.Dimension tolerance based Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material:
Lead: Alloy; solder plating Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HTIP112
HSMC Product Specification

HTIP112 EPITAXIAL PLANAR TRANSISTOR Description HTIP112

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