HSD965 EPITAXIAL PLANAR TRANSISTOR Description HSD965 s

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HSD965 EPITAXIAL PLANAR TRANSISTOR Description HSD965 s

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Spec. HE6537 Issued Date 1992.11.25 Revised Date 2002.02.22 Page
HSD965
EPITAXIAL PLANAR TRANSISTOR
Description
HSD965 suited output amplifier flash unit.
Absolute Maximum Ratings
TO-92
Maximum Temperatures Storage Temperature +150 Junction Temperature Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) Maximum Voltages Currents (Ta=25°C) VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage Collector Current (Continuous) Collector Current (Peak PT=10mS)
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE1 *hFE2 Min. Typ. 0.35 Max. Unit Test Conditions IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=10V, IE=0 VEB=7V, IC=0 IC=3A, IB=100mA VCE=2V, IC=0.5A VCE=2V, IC=2A VCE=6V, IE=50mA VCB=20V, f=1MHz, IE=0
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Classification
Rank Range 230-380 340-600 560-800
HSD965
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
10000 1000
Spec. HE6537 Issued Date 1992.11.25 Revised Date 2002.02.22 Page
Saturation Voltage Collector Current
VCE(sat) IC=30IB
1000
Saturation Voltage (mV)
VCE=2V
1000 10000
1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Capacitance Reverse-Biased Voltage
1000
Cutoff Frequency Collector Current
Cutoff Frequency (MHz).
Capacitance (pF)
VCE=6V
1000
Reverse-Biased Voltage
Collector Current-IC (mA)
Safe Operating Area
10000
Power Derating
Power Dissipation-PD (mW)
Collector Current-IC (mA)
1000 PT=1ms PT=100ms PT=1s
Forward Biased Voltage-VCE
Ambient Temperature-Ta
HSD965
HSMC Product Specification
TO-92 Dimension
Date Code
Spec. HE6537 Issued Date 1992.11.25 Revised Date 2002.02.22 Page
Marking:
Rank Control Code
Style: 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package HSMC Package Code:
Typical
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27
Notes: 1.Dimension tolerance based Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material:
Lead: Alloy; solder plating Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSD965
HSMC Product Specification

HSD965 EPITAXIAL PLANAR TRANSISTOR Description HSD965 s

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