H1N4148 HIGH-SPEED SWITCHING DIODES Description H1N4148

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H1N4148 HIGH-SPEED SWITCHING DIODES Description H1N4148

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Spec. Preliminary Data Issued Date 1999.05.01 Revised Date 1999.09.01 Page
H1N4148
HIGH-SPEED SWITCHING DIODES
Description
H1N4148 designed high-speed switching application hybrid thick thin-film circuits. device manufactured sillcon epitaxial planar process packed plastic surface mount package.
Features
Ultra-High Speed Forard Voltage Fast Reverse Recovery Time
Absolute Maximum Ratings
Characteristics Reverse Voltage Peak Reverse Voltage Rectified Current (Average) Half Wave Rectification with Resist Load Tamb=25°C f50Hz Surge Forward Current t<1s Tj=25°C Power Dissipation Tamb=25°C Junction Temperature Storage Temperature Range Symbol IFSM Ptot Value +200 Unit
Characteristics (Tj=25°C)
Characteristics Forward Voltage IF=10mA Leakage Current VR=20V VR=75V VR=20V,Tj=150°C Reverse Breakdown Voltage tested with Pulses Capacitance VF=VR=0 Voltage Rise when Switching Tested with 50mA Forward Pulses Tp=0.1us, Rise Time<30ns, fp=5~100kHz Reverse Recovery Time From IF=-IR=10mA IRR=-1mA,VR=6V RL=100 Thermal Resistance Function Ambient Rectification Efficiency =100MHz,VRF=2V Symbol V(BR)R Ctot RthA 0.45 0.35 Unit K/mW
HSMC Product Specification
Characteristics Curve
Spec. Preliminary Data Issued Date 1999.05.01 Revised Date 1999.09.01 Page
HSMC Product Specification
DO-35(Glass) Dimension
Spec. Preliminary Data Issued Date 1999.05.01 Revised Date 1999.09.01 Page
*:Typical
Inches Min. Max. 0.0181 0.0220 0.9646 1.2811 0.1200 0.1700
Millimeters Min. Max. 0.46 0.56 24.50 32.54 3.05 4.20
Inches Min. Max. 0.9646 1.2811 0.0602 0.0787
Millimeters Min. Max. 24.50 32.54 1.53 2.00
Notes 1.Dimension tolerance based Spec. dated May. 28,1998
2.Controlling dimension millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory
Head Office (Hi-Sincerity Microelectronics Corp.) 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. 886-2-25212056 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C 886-3-5983621~5 886-3-5982931 Factory 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C 886-3-5977061 886-3-5979220
HSMC Product Specification

H1N4148 HIGH-SPEED SWITCHING DIODES Description H1N4148

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