HSD879D SILICON EPITAXIAL TYPE TRANSISTOR Description 1

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

HSD879D SILICON EPITAXIAL TYPE TRANSISTOR Description 1

Datasheet Thumbnail

Top Searches for this datasheet

Spec. HD200203 Issued Date 1996.07.15 Revised Date 2002.02.26 Page
HSD879D
SILICON EPITAXIAL TYPE TRANSISTOR
Description
1.5V electronic flash use.
Features
Charger-up time about faster than germanium transistor. Small saturation voltage bring less power dissipation flashing times.
TO-126ML
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) Maximum Voltages Currents (Ta=25°C) BVCBO Collector Base Voltage. BVCEX Collector Emitter Voltage BVCEO Collector Emitter Voltage. BVEBO Emitter Base Voltage. Collector Current Collector Current (Pluse)
Characteristics (Ta=25°C)
Symbol BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE *hFE Min. Typ. 0.83 Max. Unit Test Condition IC=1mA IE=10uA VCB=20V VBE=4V IC=3A, IB=60mA VCE=-1V, IC=-2A VCE=2V, IC=3A VCE=10V, IC=50mA VCB=10V, f=1KHZ
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HSD879D
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000
Spec. HD200203 Issued Date 1996.07.15 Revised Date 2002.02.26 Page
Saturation Voltage Collector Current
1000 VCE(sat) IC=50IB
Saturation Voltage (mV)
VCE=2V
1000 10000
1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Voltage Collector Current
10.0 1000
Cutoff Frequency Collector Current
VCE=10V
Cutoff Frequency
VBE(on) VCE=2V 1000 10000
Voltage
1000
Collector Current
Collector Current
Capacitance Reverse-Biased Voltage
Safe Operating Area
Collector Current-IC (mA)
Capacitance (pF)
PT=1ms
PT=100ms
PT=1S
Reverse Biased Voltage
Forward Voltage-VCE
HSD879D
HSMC Product Specification
TO-126ML Dimension
Marking:
Spec. HD200203 Issued Date 1996.07.15 Revised Date 2002.02.26 Page
Date Code
Control Code
Style: 1.Base 2.Collector 3.Emitter
3-Lead TO-126ML Plastic Package HSMC Package Code: Typical
Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1131 0.1231 0.0737 0.0837 0.0294 0.0494 0.0462 0.0562
Millimeters Min. Max. 3.44 3.70 0.43 0.69 0.87 1.12 1.27 1.52 2.87 3.12 1.87 2.12 0.74 1.25 1.17 1.42
Inches Min. Max. *0.1795 0.0268 0.0331 0.5512 0.5906 0.2903 0.3003 0.1378 0.1478 0.1525 0.1625 0.0740 0.0842
Millimeters Min. Max. *4.56 0.68 0.84 14.00 15.00 7.37 7.62 3.50 3.75 3.87 4.12 1.88 2.14
Notes: 1.Dimension tolerance based Spec. dated Mar. 6,1995.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material:
Lead: Alloy; solder plating Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSD879D
HSMC Product Specification

HSD879D SILICON EPITAXIAL TYPE TRANSISTOR Description 1

Top Searches for this datasheet

Other recent searches