N-Channel 12-V (D-S) MOSFET FEATURES TrenchFETr Power MOSFET

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N-Channel 12-V (D-S) MOSFET FEATURES TrenchFETr Power MOSFET

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Si7858DP
N-Channel 12-V (D-S) MOSFET
FEATURES
TrenchFETr Power MOSFET Thermal Resistance PowerPAKt Package with 1.07-mm Profile
PRODUCT SUMMARY
rDS(on)
0.003 0.004
APPLICATIONS
Output Voltage, High Current Synchronous Rectifiers
PowerPAKt SO-8
6.15
5.15
N-Channel MOSFET Bottom View
ABSOLUTE MAXIMUM RATINGS 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 150_C)a Pulsed Drain Current Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction Storage Temperature Range 25_C 70_C 25_C 70_C
Symbol
secs
Steady State
Unit
Tstg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes Surface Mounted Board. Document Number: 71832 S-20118-Rev. 11-Mar-02 www.vishay.com Steady State Steady State RthJA RthJC
Symbol
Typical
Maximum
Unit
_C/W
Si7858DP
SPECIFICATIONS 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) VGS, 55_C 0.0024 0.0031 0.75 0.003 0.004 0.95 "100
Symbol
Test Condition
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time td(on) td(off) di/dt A/ms VGEN
Notes Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
thru
Transfer Characteristics
Drain Current
Drain Current
125_C 25_C
-55_C
Drain-to-Source Voltage
Gate-to-Source Voltage Document Number: 71832 S-20118-Rev. 11-Mar-02
www.vishay.com
Si7858DP
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance Drain Current
0.005 7500
Capacitance
DS(on) On-Resistance
0.004 Capacitance (pF) 0.003 0.002
6000 Ciss 4500
3000 Coss 1500 Crss
0.001
0.000
Drain Current
Drain-to-Source Voltage
Gate Charge
Gate-to-Source Voltage
On-Resistance Junction Temperature
DS(on) On-Resistance (Normalized)
Total Gate Charge (nC)
Junction Temperature (_C)
Source-Drain Diode Forward Voltage
0.015
On-Resistance Gate-to-Source Voltage
150_C Source Current
DS(on) On-Resistance
0.012
25_C
0.009
0.006 0.003
0.00 Source-to-Drain Voltage
0.000
Gate-to-Source Voltage
Document Number: 71832 S-20118-Rev. 11-Mar-02
www.vishay.com
Si7858DP
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 Power
Single Pulse Power
GS(th) Variance
0.001
0.01
Time (sec)
Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle
Normalized Effective Transient Thermal Impedance
Notes:
0.05
0.02
Duty Cycle,
Unit Base RthJA 50_C/W
Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec)
PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle
Normalized Effective Transient Thermal Impedance
Single Pulse 0.05 0.02
0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec)
www.vishay.com
Document Number: 71832 S-20118-Rev. 11-Mar-02

N-Channel 12-V (D-S) MOSFET FEATURES TrenchFETr Power MOSFET

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