HSD879 SILICON EPITAXIAL TYPE TRANSISTOR Description 1.

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HSD879 SILICON EPITAXIAL TYPE TRANSISTOR Description 1.

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Spec. HA200207 Issued Date 1996.07.15 Revised Date 2002.02.25 Page
HSD879
SILICON EPITAXIAL TYPE TRANSISTOR
Description
1.5V electronic flash use.
Features
Charger-up time about faster than germanium transistor Small saturation voltage bring less power dissipation flashing times
TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) Maximum Voltages Currents (Ta=25°C) BVCBO Collector Base Voltage. BVCEX Collector Emitter Voltage BVCEO Collector Emitter Voltage. BVEBO Emitter Base Voltage. Collector Current. Collector Current (Pluse)
Electrical Characteristics (Ta=25°C)
Symbol BVCEO BVEBO BVCBO BVCEX ICBO IEBO *hFE *VCE(sat) Min. Typ. Max. Unit Test Condition IC=1mA IE=10uA IC=10uA IC=1mA, VBE=3V VCB=20V VBE=4V VCE=2V, IC=3A IC=3A, IB=60mA VCE=10V, IC=50mA VCB=10V, f=1MHZ
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HSD879
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000
Spec. HA200207 Issued Date 1996.07.15 Revised Date 2002.02.25 Page
Saturation Voltage Collector Current
1000 VCE(sat) IC=50IB
Saturation Voltage (mV)
VCE=2V
1000 10000
1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Cutoff Frequency Collector Current
1000
Capacitance Reverse-Biased Voltage
Cutoff Frequency (MHz).
VCE=10V
Capacitance (pF)
1000
Collector Current (mA)
Reverse Biased Voltage
Power Derating
Power Dissipation-PD (mW)
Ambient Temperature-Ta
HSD879
HSMC Product Specification
TO-92 Dimension
Date Code
Spec. HA200207 Issued Date 1996.07.15 Revised Date 2002.02.25 Page
Marking:
Control Code
Style: 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package HSMC Package Code:
Typical
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27
Notes: 1.Dimension tolerance based Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material:
Lead: Alloy; solder plating Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSD879
HSMC Product Specification

HSD879 SILICON EPITAXIAL TYPE TRANSISTOR Description 1.

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