HSD1609S EPITAXIAL PLANAR TRANSISTOR Description HSD160

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HSD1609S EPITAXIAL PLANAR TRANSISTOR Description HSD160

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Spec. HE6515 Issued Date 1993.03.15 Revised Date 2002.01.15 Page
HSD1609S
EPITAXIAL PLANAR TRANSISTOR
Description
HSD1609S designed frequency high voltage amplifier applications, complementary pair with HSB1109S.
Absolute Maximum Ratings
TO-92
Maximum Temperatures Storage Temperature +150 Junction Temperature Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) Maximum Voltages Currents (Ta=25°C) VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage Collector Current.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) VBE(on) *hFE1 *hFE2 Min. Typ. Max. Unit Test Conditions IC=10uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=140V, IE=0 IC=30mA, IB=3mA VCE=5V, IC=10mA VCE=5V, IC=10mA VCE=5V, IC=1mA VCE=5V, IC=10mA IE=0, VCB=10V, f=1MHZ
*Pulse Test Pulse Width 380us, Duty Cycle2%
Classification hFE1
Rank Range 60-120 100-200 160-320
HSD1609S
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
10000 1000
Spec. HE6515 Issued Date 1993.03.15 Revised Date 2002.01.15 Page
Saturation Voltage Collector Current
Saturation Voltage (mV)
1000
VCE=5V 1000
VCE(sat) IC=10IB
1000
Collector Current (mA)
Collector Current (mA)
Saturation Voltage Collector Current
10000 1000
Voltage Collector Current
Saturation Voltage (mV)
Voltage (mV)
1000
VCE(sat) IC=20IB
VBE(ON) IC=5V
1000 10000
1000
Collector Current (mA)
Collector Current (mA)
Cutoff Frequency
1000
Capacitance Reverse-Biased Voltage
Cutoff Frequency (MHz).
Capacitance (PF)
1000
1000
Collector Current (mA)
Reverse Biased Voltage
HSD1609S
HSMC Product Specification
Spec. HE6515 Issued Date 1993.03.15 Revised Date 2002.01.15 Page
Safe Operating Area
PT=1ms
Power Derating
1000
Collector Current (mA)
PT=1s
Power Dissipation-PD(mW)
PT=100ms
0.01
0.001 1000
Forward Voltage
Ambient Temperature-Ta(
HSD1609S
HSMC Product Specification
TO-92 Dimension
Spec. HE6515 Issued Date 1993.03.15 Revised Date 2002.01.15 Page
Marking:
HSMC Logo Part Number Date Code Rank Product Series
Laser Mark
HSMC Logo Product Series
Part Number
Mark
3-Lead TO-92 Plastic Package HSMC Package Code:
Style: 1.Emitter 2.Collector 3.Base
Typical
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27
Notes: 1.Dimension tolerance based Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material:
Lead: Alloy; solder plating Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSD1609S
HSMC Product Specification

HSD1609S EPITAXIAL PLANAR TRANSISTOR Description HSD160

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