HSC1959 EPITAXIAL PLANAR TRANSISTOR Description HSC1959

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HSC1959 EPITAXIAL PLANAR TRANSISTOR Description HSC1959

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Spec. HE6524 Issued Date 1993.01.15 Revised Date 2002.03.04 Page
HSC1959
EPITAXIAL PLANAR TRANSISTOR
Description
HSC1959 designed audio frequency power amplifier applications.
Features
Excellent Linearity
TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature +150 Junction Temperature Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) Maximum Voltages Currents (Ta=25°C) VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage Collector Current
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEB ICBO IEBO *VCE(sat) VBE(on) *hFE1 *hFE2 Min. Typ. Max. 0.25 Unit Test Conditions IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=35V, IE=0 VEB=5V, IC=0 IC=100mA, IB=10mA VCE=1V, IC=100mA VCE=1V, IC=100mA VCE=6V, IC=400mA IC=20mA, VCE=6V IE=0, VCB=6V, f=1MHZ
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HSC1959
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000 1000
Spec. HE6524 Issued Date 1993.01.15 Revised Date 2002.03.04 Page
Current Gain Collector Current
VCE=1V
VCE=6V
1000
1000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
1000
VCE(sat) IC=10IB 1000
Voltage Collector Current
Saturation Voltage (mV)
Voltage (mV)
VBE(ON) VCE=1V
Collector Current-IC (mA) 1000
1000
Collector Current-IC (mA)
Cutoff Frequency
1000
Capacitance Reverse-Biased Voltage
Cutoff Frequency (MHz).
VCE=6V
Capacitance (pF)
1000
Collector Current (mA)
Reverse Biased Voltage
HSC1959
HSMC Product Specification
Spec. HE6524 Issued Date 1993.01.15 Revised Date 2002.03.04 Page
Safe Operating Area
10000 PT=1ms PT=100ms
Collector Current-IC (mA)
1000
PT=1s
Forward Voltage-VCE
HSC1959
HSMC Product Specification
TO-92 Dimension
Date Code
Spec. HE6524 Issued Date 1993.01.15 Revised Date 2002.03.04 Page
Marking:
Control Code
Style: 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package HSMC Package Code:
Typical
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27
Notes: 1.Dimension tolerance based Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material:
Lead: Alloy; solder plating Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSC1959
HSMC Product Specification

HSC1959 EPITAXIAL PLANAR TRANSISTOR Description HSC1959

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