HSC1815 EPITAXIAL PLANAR TRANSISTOR Description HSC1815

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HSC1815 EPITAXIAL PLANAR TRANSISTOR Description HSC1815

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Spec. HE6523 Issued Date 1992.11.25 Revised Date 2001.06.06 Page
HSC1815
EPITAXIAL PLANAR TRANSISTOR
Description
HSC1815 designed driver stage amplifier general purpose amplification.
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) Maximum Voltages Currents (Ta=25°C) VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage Collector Current Base Current
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 Min. Typ. Max. Unit Test Conditions IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=2mA VCE=6V, IC=150mA VCE=10V, IC=1mA, f=100MHz VCB=10V, f=1MHz, IE=0
*Pulse Test Pulse Width 380us, Duty Cycle2%
Classification hFE1
Rank Range 120-240 200-400 350-700
HSC1815
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000
Spec. HE6523 Issued Date 1992.11.25 Revised Date 2001.06.06 Page
Saturation Voltage Collector Current
VBE(sat) IC=10IB VCE=6V
Saturation Voltage (mV)
VCE(sat) IC=10IB
0.01 1000
0.01 0.01 1000
Collector Current (mA)
Collector Current (mA)
Capacitance Reverse-Biased Voltage
1000
Cutoff Frequency Collector Current
Cutoff Frequency (MHz)
VCE=10V
Capacitance (pF)
Reverse-Biased Voltage
Collector Current (mA)
Safe Operating Area
10000 PT=1ms 1000
PD-Ta
Power Dissipation-PD(mW)
PT=100ms
Collector Current-IC (mA)
PT=1s
Forward Voltage-VCE
Ambient Temperature-Ta(
HSC1815
HSMC Product Specification
TO-92 Dimension
Spec. HE6523 Issued Date 1992.11.25 Revised Date 2001.06.06 Page
Marking
HSMC Logo Part Number Date Code Rank Product Series
Laser Mark
HSMC Logo Product Series
Part Number
Mark Style 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package HSMC Package Code
*:Typical
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27
Notes 1.Dimension tolerance based Spec. dated Apr. 25,1996.
2.Controlling dimension millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material
Lead Alloy solder plating Mold Compound Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory
Head Office (Hi-Sincerity Microelectronics Corp.) 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. 886-2-25212056 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C 886-3-5983621~5 886-3-5982931
HSC1815
HSMC Product Specification

HSC1815 EPITAXIAL PLANAR TRANSISTOR Description HSC1815

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