HSB772S EPITAXIAL PLANAR TRANSISTOR Description HSB772S

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HSB772S EPITAXIAL PLANAR TRANSISTOR Description HSB772S

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Spec. HE6549 Issued Date 1992.11.25 Revised Date 2003.08.12 Page
HSB772S
EPITAXIAL PLANAR TRANSISTOR
Description
HSB772S designed using output stage 0.75W amplifier, voltage regulator, DC-DC converter driver.
Absolute Maximum Ratings
TO-92
Maximum Temperatures Storage Temperature. +150 Junction Temperature. +150 Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C). Maximum Voltages Currents (Ta=25°C) VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage Collector Current
Electrical Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 Min. Typ. Max. -0.5 Unit Test Conditions IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-30V, IE=0 VEB=-3V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-2V, IC=-20mA VCE=-2V, IC=-1A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Classification hFE2
Rank Range 100-200 160-320 200-400
HSB772S
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000
Spec. HE6549 Issued Date 1992.11.25 Revised Date 2003.08.12 Page
Saturation Voltage Collector Current
10000 VCE(s IC=5IB
Saturation Voltage (mV)
1000
VCE=2V
1000 10000
1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
10000 VCE(sat) IC=10IB
Saturation Voltage Collector Current
10000 VCE(sat) IC=20IB
Saturation Voltage (mV)
Saturation Voltage (mV)
1000
1000
1000 10000
1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
10000 VCE(sat) IC=40IB 1000
Saturation Voltage Collector Current
10000 VBE(sat) IC=10IB
Saturation Voltage (mV)
Saturation Voltage (mV)
1000
1000 10000
1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
HSB772S
HSMC Product Specification
Spec. HE6549 Issued Date 1992.11.25 Revised Date 2003.08.12 Page
Cutoff Frequency Collector Current
1000 1000
Capacitance Reverse-Biased Voltage
Cutoff Frequency (MHz).
VCE=5V
Capacitance (pF)
1000
Collector Current (mA)
Reverse-Biased Voltage
Safe Operation Area
PT=1ms
Power Derating
Collector Current
Power Dissipation-PD (mW)
PT=100ms
PT=1s
0.01
Forward Biased Voltage
Ambient Temperature-Ta
HSB772S
HSMC Product Specification
TO-92 Dimension
Date Code
Spec. HE6549 Issued Date 1992.11.25 Revised Date 2003.08.12 Page
Marking:
Rank Control Code
Style: 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package HSMC Package Code:
Typical
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27
Notes: 1.Dimension tolerance based Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material:
Lead: Alloy; solder plating Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSB772S
HSMC Product Specification

HSB772S EPITAXIAL PLANAR TRANSISTOR Description HSB772S

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