HLB123D EPITAXIAL PLANAR TRANSISTOR Description HLB123D
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Spec. HE6603 Issued Date 1993.03.15 Revised Date 2002.01.07 Page
HLB123D
EPITAXIAL PLANAR TRANSISTOR
Description
HLB123D designed high voltage. High speed switching inductive circuits amplifier applications.
Features
High Speed Switching Saturation Voltage High Reliability
TO-126ML
Absolute Maximum Ratings (Ta=25°C)
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C). Maximum Voltages Currents BVCBO Collector Base Voltage BVCEO Collector Emitter Voltage BVEBO Emitter Base Voltage Collector Current (DC) Collector Current (Pulse)
Electrical Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 Tstg Toff Min. Typ. Max. Unit Test Conditions IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=600V, IE=0 VBE=9V, IC=0 IC=0.1A, IB=10mA IC=0.3A, IB=30mA IC=0.1A, IB=10mA IC=0.3A, IB=30Ma IC=0.3A, VCE=5V IC=0.5A, VCE=5V IC=1A, VCE=5V VCC=100V, IC=1A, IB1=IB2=0.2A VCC=100V, IC=1A, IB1=IB2=0.2A VCC=100V, IC=1A, IB1=IB2=0.2A
*Pulse Test Pulse Width 380us, Duty Cycle2%
Classification hFE1
Rank Range 10-17 13-22 18-27 23-32 28-37 33-42 38-47 43-50
HLB123D
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
Spec. HE6603 Issued Date 1993.03.15 Revised Date 2002.01.07 Page
Saturation Voltage Collector Current
10000
Saturation Voltage (mV)
1000
VCE=5V
VCE(sat) IC=10IB
1000 10000
1000
10000
Collector Current (mA)
Collector Current (mA)
Saturation Voltage Collector Current
10000
Voltage Collector Current
1000
Saturation Voltage (mV)
VBE(on) VCE=5V
1000
VBE(s IC=10IB 1000 10000
Voltage (mV)
1000
Collector Current (mA)
Collector Current (mA)
Capacitance Reverse-Biased Volatge
10.0
Switching Time Collector Current
VCC=100V, IC=5IB1 =-5IB2
Switching Time (us)
Tstg
Capacitance (pF)
Reverse-Biased Voltage
Collector Current
HLB123D
HSMC Product Specification
Spec. HE6603 Issued Date 1993.03.15 Revised Date 2002.01.07 Page
Safe Operating Area
10000
Collector Current (mA)
1000
PT=1ms PT=100ms PT=1s
1000
Forward Voltage
HLB123D
HSMC Product Specification
TO-126ML Dimension
Marking:
Spec. HE6603 Issued Date 1993.03.15 Revised Date 2002.01.07 Page
Date Code
Control Code
Rank would show label Style: 1.Emitter 2.Collector 3.Base
3-Lead TO-126ML Plastic Package HSMC Package Code: Typical
Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1131 0.1231 0.0737 0.0837 0.0294 0.0494 0.0462 0.0562
Millimeters Min. Max. 3.44 3.70 0.43 0.69 0.87 1.12 1.27 1.52 2.87 3.12 1.87 2.12 0.74 1.25 1.17 1.42
Inches Min. Max. *0.1795 0.0268 0.0331 0.5512 0.5906 0.2903 0.3003 0.1378 0.1478 0.1525 0.1625 0.0740 0.0842
Millimeters Min. Max. *4.56 0.68 0.84 14.00 15.00 7.37 7.62 3.50 3.75 3.87 4.12 1.88 2.14
Notes: 1.Dimension tolerance based Spec. dated Mar. 6,1995.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material:
Lead Alloy; solder plating Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HLB123D
HSMC Product Specification
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