HJ32C EPITAXIAL PLANAR TRANSISTOR Description HJ32C des

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HJ32C EPITAXIAL PLANAR TRANSISTOR Description HJ32C des

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Spec. HE6002 Issued Date 1994.03.02 Revised Date 2002.01.17 Page
HJ32C
EPITAXIAL PLANAR TRANSISTOR
Description
HJ32C designed general purpose amplifier speed switching applications.
Absolute Maximum Ratings (Ta=25°C)
TO-252
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Power Dissipation Total Power Dissipation (Tc=25°C) Maximum Voltages Currents BVCBO Collector Base Voltage. -100 BVCEO Collector Emitter Voltage. -100 BVEBO Emitter Base Voltage. Collector Current.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO ICES ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 Min. -100 -100 Typ. Max. -1.2 -1.8 Unit Test Conditions IC=-1mA, IE=0 IC=-30mA, IB=0 VCE=-100V, VEB=0 VCE=-60V, IB=0 VEB=-5V, IC=0 IC=-3A, IB=-375mA VCE=-4V, IC=-3A VCE=-4V, IC=-1A VCE=-4V, IC=-3A VCE=-10V, IC=-500mA, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HJ32C
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000
Spec. HE6002 Issued Date 1994.03.02 Revised Date 2002.01.17 Page
Saturation Voltage Collector Current
Saturation Voltage (mV)
VCE(sat) IC=8IB
VCE=4V
1000 10000
1000 10000
Collector Current (mA)
Collector Current (mA)
Voltage Collector Current
10000 10.00
Switching Time Collector Current
VCC=30V, IC=10IB1 =-10IB2
Switching Times (us).
Voltage (mV)
1.00
1000
Tstg 0.10
VBE(ON) VCE=4V 1000 10000
0.01 10.0
Collector Current (mA)
Collector Current
Capacitance Reverse-Biased Voltage
1000 10000
Safe Operating Area
Collector Current (mA)
1000 PT=1ms
Capacitance (pF)
PT=100ms PT=1s
1000
Reverse-Biased Voltage
Forward Voltage
HJ32C
HSMC Product Specification
TO-252 Dimension
Spec. HE6002 Issued Date 1994.03.02 Revised Date 2002.01.17 Page
Marking:
Date Code
Control Code
Style: 1.Base 2.Collector 3.Emitter
3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: Typical
Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2520 0.2677 0.2125 0.2283
Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.40 6.80 5.40 5.80
Inches Min. Max. 0.0866 0.1102 *0.0906 0.0354 0.0315 0.2047 0.2165 0.0551 0.0630
Millimeters Min. Max. 2.20 2.80 *2.30 0.90 0.80 5.20 5.50 1.40 1.60
Notes: 1.Dimension tolerance based Spec. dated May. 05,1996.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material:
Lead: Alloy; solder plating Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HJ32C
HSMC Product Specification

HJ32C EPITAXIAL PLANAR TRANSISTOR Description HJ32C des

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