HJ31C EPITAXIAL PLANAR TRANSISTOR Description HJ31C des

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

HJ31C EPITAXIAL PLANAR TRANSISTOR Description HJ31C des

Datasheet Thumbnail

Top Searches for this datasheet

Spec. HE6001 Issued Date 1996.02.26 Revised Date 2002.07.12 Page
HJ31C
EPITAXIAL PLANAR TRANSISTOR
Description
HJ31C designed general purpose amplifier switching applications.
Absolute Maximum Ratings (Ta=25°C)
TO-252
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Power Dissipation Total Power Dissipation (Tc=25°C) Maximum Voltages Currents BVCBO Collector Base Voltage. BVCEO Collector Emitter Voltage. BVEBO Emitter Base Voltage. Collector Current.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO ICES ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 Min. Typ. Max. Unit Test Conditions IC=1mA, IE=0 IC=30mA, IB=0 VCE=100V, VEB=0 VCE=60V, IB=0 VEB=5V, IC=0 IC=3A, IB=375mA VCE=4V, IC=3A VCE=4V, IC=1A VCE=4V, IC=3A VCE=10V, IC=500mA, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HJ31C
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000 VCE(sat) IC=8IB
Spec. HE6001 Issued Date 1996.02.26 Revised Date 2002.07.12 Page
Saturation Voltage Collector Current
Saturation Voltage (mV)
VCE=4V
1000 10000
1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Voltage Collector Current
10000 VBE(ON) VCE=4V 10.0
Switching Time Collector Current
VCC=30V, IC=10IB1=-10IB2
1000
Switching Times (us).
Voltage (mV)
Tstg
1000 10000
10.0
Collector Current-IC (mA)
Collector Current
Capacitance Reverse-Biased Voltage
100000
Safe Operating Area
10000
PT=1ms PT=100ms
Collector Current-IC (mA)
Capacitance (pF)
1000
PT=1s
Reverse-Biased Voltage
Forward Voltage-VCE
HJ31C
HSMC Product Specification
TO-252 Dimension
Spec. HE6001 Issued Date 1996.02.26 Revised Date 2002.07.12 Page
Marking:
Date Code
Control Code
Style: 1.Base 2.Collector 3.Emitter
3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: Typical
Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2520 0.2677 0.2125 0.2283
Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.40 6.80 5.40 5.80
Inches Min. Max. 0.0866 0.1102 *0.0906 0.0354 0.0315 0.2047 0.2165 0.0551 0.0630
Millimeters Min. Max. 2.20 2.80 *2.30 0.90 0.80 5.20 5.50 1.40 1.60
Notes: 1.Dimension tolerance based Spec. dated May. 05,1996.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material:
Lead: Alloy; solder plating Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HJ31C
HSMC Product Specification

HJ31C EPITAXIAL PLANAR TRANSISTOR Description HJ31C des

Top Searches for this datasheet

Other recent searches