HJ2955 EPITAXIAL PLANAR TRANSISTOR Description HJ2955 d

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HJ2955 EPITAXIAL PLANAR TRANSISTOR Description HJ2955 d

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Spec. HE6003 Issued Date 1994.10.04 Revised Date 2002.04.03 Page
HJ2955
EPITAXIAL PLANAR TRANSISTOR
Description
HJ2955 designed general purpose amplifier switching applications.
Absolute Maximum Ratings (Ta=25°C)
TO-252
Maximum Temperatures Storage Temperature +150 Junction Temperature Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C). Maximum Voltages Currents BVCBO Collector Base Voltage. BVCEO Collector Emitter Voltage. BVEBO Emitter Base Voltage. Collector Current Base Current
Characteristics (Ta=25°C)
Symbol BVCEO BVCBO BVEBO ICBO ICEX ICEO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(on) *hFE1 *hFE2 Min. Typ. Max. -0.5 -1.1 -1.8 Unit Test Conditions IC=-30mA, IB=0 IC=-1mA, IE=0 IE=-1mA, IC=0 VCB=-70V, IE=0 VCE=-70V, VEB(off)=-1.5V VCE=-30V, IB=0 VEB=-5V, IC=0 IC=-4A, IB=-400mA IC=-10A, IB=-3.3A IC=-4A, VCE=-4V IC=-4A, VCE=-4V IC=-10A, VCE=-4V VCE=-10V, IC=-500mA, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HJ2955
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000 VCE=4V 10000 VCE(sat) IC=10IB
Spec. HE6003 Issued Date 1994.10.04 Revised Date 2002.04.03 Page
Saturation Voltage Collector Current
Saturation Voltage (mV)
1000
1000 10000
1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
10000 VCE(sat) IC=3IB 10000
Voltage Collector Current
VBE(ON) VCE=4V
Saturation Voltage (mV)
Voltage (mV)
1000
1000
1000 10000
1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Switching Time Collector Current
10.00 VCC=30V, IC=10IB1 -10IB2
1000
Capacitance Reverse-Biased Voltage
Switching Times (us).
1.00
Tstg
Capacitance (pF)
0.10
0.01 10.0
Collector Current
Reverse-Biased Voltage
HJ2955
HSMC Product Specification
Spec. HE6003 Issued Date 1994.10.04 Revised Date 2002.04.03 Page
Safe Operating Area
100000 PT=1ms
Collector Current-IC (mA)
10000 PT=100ms PT=1s 1000
Forward Voltage-VCE
HJ2955
HSMC Product Specification
TO-252 Dimension
Spec. HE6003 Issued Date 1994.10.04 Revised Date 2002.04.03 Page
Marking:
Date Code Control Code
Style: 1.Base 2.Collector 3.Emitter
3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: Typical
Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2520 0.2677 0.2125 0.2283
Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.40 6.80 5.40 5.80
Inches Min. Max. 0.0866 0.1102 *0.0906 0.0354 0.0315 0.2047 0.2165 0.0551 0.0630
Millimeters Min. Max. 2.20 2.80 *2.30 0.90 0.80 5.20 5.50 1.40 1.60
Notes: 1.Dimension tolerance based Spec. dated May. 05,1996.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material:
Lead: Alloy; solder plating Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HJ2955
HSMC Product Specification

HJ2955 EPITAXIAL PLANAR TRANSISTOR Description HJ2955 d

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