2SJ598 SWITCHING P-CHANNEL POWER INDUSTRIAL DESCRIPTION

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2SJ598 SWITCHING P-CHANNEL POWER INDUSTRIAL DESCRIPTION

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FIELD EFFECT TRANSISTOR
2SJ598
SWITCHING P-CHANNEL POWER INDUSTRIAL
DESCRIPTION
2SJ598 P-channel Field Effect Transistor designed solenoid, motor lamp driver.
ORDERING INFORMATION
PART NUMBER 2SJ598 PACKAGE TO-251 TO-252
FEATURES
on-state resistance: RDS(on)1 MAX. (VGS RDS(on)2 MAX. (VGS -4.0 Ciss: Ciss TYP. Built-in gate protection diode TO-251/TO-252 package
2SJ598-Z
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) 25°C) Drain Current (pulse)
Note1
(TO-251)
VDSS VGSS ID(DC) ID(pulse) Tstg
(TO-252)
Total Power Dissipation 25°C) Total Power Dissipation 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
+150 14.4
Notes Duty cycle Starting 25°C,
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document D14656EJ1V0DS00 (1st edition) Date Published November 2000 CP(K) Printed Japan
2000
2SJ598
ELECTRICAL CHARACTERISTICS 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain Source On-state Resistance SYMBOL IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) td(off) VF(S-D) TEST CONDITIONS -4.0 -6A, VGS(on) VDD= di/dt -100 0.98 MIN. TYP. MAX. UNIT
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T. BVDSS
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
VGS(on)
Duty Cycle
Wave Form
td(on)
td(off) toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Preliminary Data Sheet D14656EJ1V0DS
2SJ598
PACKAGE DRAWINGS (Unit
TO-251 (MP-3) TO-252 (MP-3Z)
1.5-0.1
+0.2
6.5±0.2 5.0±0.2
2.3±0.2 0.5±0.1
MAX.
6.5±0.2 5.0±0.2
1.5-0.1
+0.2
2.3±0.2 0.5±0.1
1.6±0.2
5.5±0.2
13.7 MIN.
MAX.
1.1±0.2
+0.2
0.5-0.1
0.5-0.1
1.Gate 2.Drain 3.Source 4.Fin (Drain)
+0.2
MAX. MAX. Gate Drain Source (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Remark
diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
0.75
1.1±0.2
MIN.
5.5±0.2 10.0 MAX.
MIN. TYP.
Preliminary Data Sheet D14656EJ1V0DS
2SJ598
information this document current November, 2000. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

2SJ598 SWITCHING P-CHANNEL POWER INDUSTRIAL DESCRIPTION

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