HBF4522D TRIPLE DIFFUSION PLANAR TRANSISTOR Description

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HBF4522D TRIPLE DIFFUSION PLANAR TRANSISTOR Description

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Spec. HE6602 Issued Date 1993.03.15 Revised Date 2002.02.20 Page
HBF4522D
TRIPLE DIFFUSION PLANAR TRANSISTOR
Description
HBF4522D designed monitor dynamic focus circuit. used monitor with working frequency high 100KHz.
TO-126ML
Features
High Breakdown Voltage Saturation Voltage High Cutoff Frequency High Current Gain
Absolute Maximum Ratings (Ta=25°C)
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Power Dissipation Total Power Dissipation (Ta=25°C). Total Power Dissipation (Tc=25°C) Maximum Voltages Currents BVCBO Collector Base Voltage. BVCEO Collector Emitter Voltage. BVEBO Emitter Base Voltage. Collector Current. Base Current
Electrical Characteristics (Ta=25°C)
Symbol BVCEO BVCBO BVEBO ICBO IEBO *VCE(sat) *hFE Min. Typ. 0.35 Max. Unit Test Conditions IC=1mA IC=100uA IE=10uA, VCB=500V VEB=5V IC=30mA, IB=3mA VCE=20V, IC=30mA VCE=10V, IE=30mA, ftest=100MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
HBF4522D
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000 100000 VCE(sat) IC=10IB
Spec. HE6602 Issued Date 1993.03.15 Revised Date 2002.02.20 Page
Saturation Voltage Collector Current
Saturation Voltage (mV)
10000
1000
VCE=20V
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
1000
Capacitance Reverse-Biased Voltage
Saturation Voltage (mV)
Capacitance (pf)
VBE(s IC=10IB
Collector Current-IC (mA)
Reverse Biased Voltage
Cutoff Frequency Collector Current
1000
Safe Operating Area
PT=1ms PT=100ms
Cutoff Frequency (MHz).
Collector Current-IC
PT=1s
VCE=10V
0.01
0.001 1000
Collector Current-IC (mA)
Forward Biased Voltage
HBF4522D
HSMC Product Specification
TO-126ML Dimension
Marking:
Spec. HE6602 Issued Date 1993.03.15 Revised Date 2002.02.20 Page
Date Code
Control Code
Style: 1.Emitter 2.Collector 3.Base
3-Lead TO-126ML Plastic Package HSMC Package Code: Typical
Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1131 0.1231 0.0737 0.0837 0.0294 0.0494 0.0462 0.0562
Millimeters Min. Max. 3.44 3.70 0.43 0.69 0.87 1.12 1.27 1.52 2.87 3.12 1.87 2.12 0.74 1.25 1.17 1.42
Inches Min. Max. *0.1795 0.0268 0.0331 0.5512 0.5906 0.2903 0.3003 0.1378 0.1478 0.1525 0.1625 0.0740 0.0842
Millimeters Min. Max. *4.56 0.68 0.84 14.00 15.00 7.37 7.62 3.50 3.75 3.87 4.12 1.88 2.14
Notes: 1.Dimension tolerance based Spec. dated Mar. 6,1995.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material:
Lead: Alloy; solder plating Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HBF4522D
HSMC Product Specification

HBF4522D TRIPLE DIFFUSION PLANAR TRANSISTOR Description

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