HBC556 EPITAXIAL PLANAR TRANSISTOR Description HBC556 p

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

HBC556 EPITAXIAL PLANAR TRANSISTOR Description HBC556 p

Datasheet Thumbnail

Top Searches for this datasheet

Spec. HE6422 Issued Date 1992.11.25 Revised Date 2001.06.15 Page
HBC556
EPITAXIAL PLANAR TRANSISTOR
Description
HBC556 primarily intended driver stage audio amplifiers.
Features
High Breakdown Voltage: IC=1mA High Current Gain: 75-500 IC=2mA,VCE=5V,f=1MHz
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) Maximum Voltages Currents (Ta=25°C) VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage Collector Current -100
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO VBE(on)1 VBE(on)2 *VCE(sat)1 *VCE(sat)2 *hFE Min. -600 Typ. Max. -750 -820 -300 -650 Unit Test Conditions IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-30V, IE=0 IC=-2mA, VCE=-5V IC=-10mA, VCE=-5V IC=-10mA, IB=-0.5mA IC=-100mA, IB=-5mA VCE=-5V, IC=-2mA, VCE=-5V, IC=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz
*Pulse Test Pulse Width 380us, Duty Cycle2%
Classification
Rank Range 125-250 220-475 Normal 75-475
HBC556
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000 100000
Spec. HE6422 Issued Date 1992.11.25 Revised Date 2001.06.15 Page
Saturation Voltage Collector Current
VCE=5V
Saturation Voltage (mV)
10000
1000 VBE(sat) IC=20IB VCE(sat) IC=20IB
1000
1000
Collector Current (mA)
Collector Current (mA)
Voltage Collector Current
10000
Capacitance Reverse-Biased Voltage
1000
Capacitance (pF)
Voltage (mV)
VBE(on) VCE=5V
1000
Collector Current (mA)
Reverse-Biased Voltage
Cutoff Frequency Collector Current
1000 10000 PT=1ms
Safe Operating Area
PT=100ms
Collector Current-IC (mA)
Cutoff Frequency (MHz)
1000 PT=1s
VCE=5V
1000
Collector Current (mA)
Forward Voltage-V
HBC556
HSMC Product Specification
TO-92 Dimension
Spec. HE6422 Issued Date 1992.11.25 Revised Date 2001.06.15 Page
Marking
HSMC Logo Part Number Date Code Rank Product Series
Laser Mark
HSMC Logo Product Series
Part Number
Mark Style 1.Collector 2.Base 3.Emitter
3-Lead TO-92 Plastic Package HSMC Package Code
*:Typical
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27
Notes 1.Dimension tolerance based Spec. dated Apr. 25,1996.
2.Controlling dimension millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material
Lead Alloy solder plating Mold Compound Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory
Head Office (Hi-Sincerity Microelectronics Corp.) 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. 886-2-25212056 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C 886-3-5983621~5 886-3-5982931
HBC556
HSMC Product Specification

HBC556 EPITAXIAL PLANAR TRANSISTOR Description HBC556 p

Top Searches for this datasheet

Other recent searches