HAD826SP EPITAXIAL PLANAR TRANSISTOR Description HAD826

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HAD826SP EPITAXIAL PLANAR TRANSISTOR Description HAD826

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Spec. :Preliminary Data Issued Date 2000.10.01 Revised Date 2000.10.01 Page
HAD826SP
EPITAXIAL PLANAR TRANSISTOR
Description
HAD826SP designed general purpose amplifier high speed, medium-power switching applications.
Features
Collector Saturation Voltage High Speed Switching
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature. +150 Junction Temperature Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) Maximum Voltages Currents (Ta=25°C) VCBO Collector Base Voltage. VCEO Collector Emitter Voltage VEBO Emitter Base Voltage Collector Current
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 *hFE6 Min. Typ. Max. Unit Test Conditions IC=10uA, IE=0 IC=10mA, IB=0 IE=10uA, IC=0 VCB=60V, IE=0 VCB=60V, VEB(OFF)=3V VEB=3V, IC=0 IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=100uA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA VCE=1V, IC=150mA VCE=20V, IC=20mA, =100MHz VCB=10V, f=1MHz
*Pulse Test Pulse Width 380us, Duty Cycle2%
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000 10000
Spec. :Preliminary Data Issued Date 2000.10.01 Revised Date 2000.10.01 Page
Saturation Voltage Collector Current
VCE=10V VCE=1V
Saturation Voltage (mV)
1000 VBE(sat) IC=10IB
VCE(sat) IC=10IB 1000 1000
Collector Current (mA)
Collector Current (mA)
Capacitance Reverse-Biased Voltage
1000
Cutoff Frequency Collector Current
Cutoff Frequency (MHz)
Capacitance (pF)
1000
1000
Reverse Biased Voltage
Collector Current (mA)
HSMC Product Specification
TO-92SP Dimension
Spec. :Preliminary Data Issued Date 2000.10.01 Revised Date 2000.10.01 Page
Style 1.Emitter 2.Collector 3.Base
3-Lead TO-92SP Plastic Package, HSMC Package Code
*:Typical
Inches Min. Max. 0.1450 0.1650 0.1063 0.1300 0.5000 *0.1000
Millimeters Min. Max. 3.70 4.20 2.70 3.30 12.7 *2.54
Inches Min. Max. 0.0160 0.0240 *0.0150 0.0800 0.1050
Millimeters Min. Max. 0.41 0.61 *0.38 2.03 2.67
Notes 1.Dimension tolerance based Spec. dated Sep. 07,1997.
2.Controlling dimension millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material
Lead Alloy solder plating Mold Compound Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory
Head Office (Hi-Sincerity Microelectronics Corp.) 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. 886-2-25212056 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C 886-3-5983621~5 886-3-5982931 Factory 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C 886-3-5977061 886-3-5979220
HSMC Product Specification

HAD826SP EPITAXIAL PLANAR TRANSISTOR Description HAD826

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