HMPSH10 EPITAXIAL PLANAR TRANSISTOR Description HMPSH10

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HMPSH10 EPITAXIAL PLANAR TRANSISTOR Description HMPSH10

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Spec. HA200105 Issued Date 2000.11.01 Revised Date 2001.10.25 Page
HMPSH10
EPITAXIAL PLANAR TRANSISTOR
Description
HMPSH10 designed oscillators mixer tuner receiver.
Features
High frequency Very capacitance
TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature +150 Junction Temperature. +150 Maximum Power Dissipation Total Power Dissipation (Ta=25°C) Maximum Voltages Currents (Ta=25°C) VCBO Collector Base Voltage VCEO Collector Emitter Voltage. VEBO Emitter Base Voltage Collector Current
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) VBE(on) *hFE Min. Typ. Max. 0.95 Unit Test Conditions IC=100uA IC=1mA IC=10uA VCB=20V VEB=2V IC=4mA, IB=0.4mA VCE=10V, IC=4mA VCE=10V, IC=4mA VCB=10V, f=1MHz VCB=10V, IC=4mA, f=100MHz
*Pulse Test Pulse Width 380us, Duty Cycle2%
HMPSH10
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000 1000
Spec. HA200105 Issued Date 2000.11.01 Revised Date 2001.10.25 Page
Current Gain Collector Current
VCE=5V
VCE=10V
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage Collector Current
1000 1000
Voltage Collector Current
VBE(on) VCE=10V Saturation Voltage (mV)
VCE(sat) IC=10IB
Voltage (mV)
Collector Current-IC (mA)
Collector Current-IC (mA)
Cutoff Frequency Collector Current
Capacitance Reverae Biased Voltage
Cutoff Frequency (GHz)
Capacitance (pF)
VCE=10V
Collector Current-IC (mA)
Reverae Biased Voltage
HMPSH10
HSMC Product Specification
Characteristics Curve
PD-Ta
Spec. HA200105 Issued Date 2000.11.01 Revised Date 2001.10.25 Page
Power Dissipation-PD(mW)
Ambient Temperature-Ta(
HMPSH10
HSMC Product Specification
TO-92 Dimension
Spec. HA200105 Issued Date 2000.11.01 Revised Date 2001.10.25 Page
Marking:
HSMC Logo Part Number Date Code Rank Product Series
Laser Mark
HSMC Logo Product Series
Part Number
Mark
3-Lead TO-92 Plastic Package HSMC Package Code:
Style: 1.Base 2.Emitter 3.Collector
Typical
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27
Notes: 1.Dimension tolerance based Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material:
Lead: Alloy solder plating Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HMPSH10
HSMC Product Specification

HMPSH10 EPITAXIAL PLANAR TRANSISTOR Description HMPSH10

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