HSA1015 EPITAXIAL PLANAR TRANSISTOR Description HSA1015

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HSA1015 EPITAXIAL PLANAR TRANSISTOR Description HSA1015

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Spec. HE6512-B Issued Date 1992.11.25 Revised Date 2000.09.15 Page
HSA1015
EPITAXIAL PLANAR TRANSISTOR
Description
HSA1015 designed driver stage amplifier general purpose amplification.
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) Maximum Voltages Currents (Ta=25°C) VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage Collector Current -150
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 Min. Typ. Max. -100 -100 -300 -1.1 Unit Test Conditions IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA VCE=-6V, IC=-2mA VCE=-6V, IC=-150mA VCE=-10V, IC=-1mA, f=100MHz VCB=-10V, f=1MHz, IE=0
*Pulse Test Pulse Width 380us, Duty Cycle2%
Classification hFE1
Rank Range 120-240 200-400 350-700
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000.0
Spec. HE6512-B Issued Date 1992.11.25 Revised Date 2000.09.15 Page
Saturation Voltage Collector Current
VBE(sat) IC=10IB 100.0
Saturation Voltage
VCE=6V
10.0
VCE(sat) IC=10IB
0.01 1000 0.01 1000
Collector Current (mA)
Collector Current (mA)
Capacitance Reverse-Biased Voltage
10.00 1000
Cutoff Frequency Collector Current
Cutoff Frequency (MHz)
VCE=10V
Capacitance (pF)
1.00
1000
Reverse-Biased Voltage
Collector Current (mA)
Safe Operating Area
10000 PT=1ms
PD-Ta
Cpllector Current-IC (mA)
1000
PT=100ms
Power Dissipation-PD(mW)
PT=1s
Forward Biased Voltage-VCE
Ambient Temperature-Ta(
HSMC Product Specification
TO-92 Dimension
Spec. HE6512-B Issued Date 1992.11.25 Revised Date 2000.09.15 Page
Marking
HSMC Logo Part Number Date Code Rank Product Series
Laser Mark
HSMC Logo Product Series
Part Number
Mark Style 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package HSMC Package Code
*:Typical
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27
Notes 1.Dimension tolerance based Spec. dated Apr. 25,1996.
2.Controlling dimension millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material
Lead Alloy solder plating Mold Compound Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory
Head Office (Hi-Sincerity Microelectronics Corp.) 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. 886-2-25212056 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C 886-3-5983621~5 886-3-5982931 Factory 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C 886-3-5977061 886-3-5979220
HSMC Product Specification

HSA1015 EPITAXIAL PLANAR TRANSISTOR Description HSA1015

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