HSB1426 EPITAXIAL PLANAR TRANSISTOR Description DC-DC C

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

HSB1426 EPITAXIAL PLANAR TRANSISTOR Description DC-DC C

Datasheet Thumbnail

Top Searches for this datasheet

Spec. HE6506 Issued Date 1994.03.25 Revised Date 2002.02.08 Page
HSB1426
EPITAXIAL PLANAR TRANSISTOR
Description
DC-DC Converter
Features
Collector Emitter Saturation Voltage
TO-92
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) Maximum Voltages Currents (Ta=25°C) VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage Collector Current
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE Min. Typ. Max. -100 -100 -500 Unit Test Conditions IC=-50uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-20V, IE=0 VEB=-5V, IC=0 IC=-2A, IB=-0.1A VCE=-2V, IC=-100mA VCE=-2V, IC=-500mA, f=100MHz VCB=-10V, IE=0, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Classification hFE1
Rank Range 82-180 120-270 180-390
HSB1426
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000 1000
Spec. HE6506 Issued Date 1994.03.25 Revised Date 2002.02.08 Page
Saturation Voltage Collector Current
Saturation Voltage (mV)
VCE=2V 1000 10000
VCE(sat) IC=20IB
1000
10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Capacitance Reverse-Biased Voltage
Cutoff Frequency Collector Current
1000
Capacitance (pF)
Cutoff Frequency (MHz).
VCE=2V
1000
Reverse-Biased Voltage
Collector Current-IC (mA)
Safe Operating Area
10000 PT=1ms
Power Derating
PT=100ms
Power Dissipation-PD (mW)
Collector Current-IC (mA)
1000 PT=1s
Forward Voltage-VCE
Ambient Temperature-Ta
HSB1426
HSMC Product Specification
TO-92 Dimension
Date Code
Spec. HE6506 Issued Date 1994.03.25 Revised Date 2002.02.08 Page
Marking:
Rank Control Code
Style: 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package HSMC Package Code:
Typical
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27
Notes: 1.Dimension tolerance based Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material:
Lead: Alloy; solder plating Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSB1426
HSMC Product Specification

HSB1426 EPITAXIAL PLANAR TRANSISTOR Description DC-DC C

Top Searches for this datasheet

Other recent searches