HSB562 EPITAXIAL PLANAR TRANSISTOR Description HSB562 d

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HSB562 EPITAXIAL PLANAR TRANSISTOR Description HSB562 d

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Spec. HE6513-B Issued Date 1993.01.15 Revised Date 2000.10.01 Page
HSB562
EPITAXIAL PLANAR TRANSISTOR
Description
HSB562 designed general purpose frequency power amplifier applications.
Absolute Maximum Ratings
Maximum Temperatures Storage Temperature +150 Junction Temperature +150 Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) Maximum Voltages Currents (Ta=25°C) VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage Collector Current
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) VBE(on) *hFE Min. Typ. Max. -500 Unit Test Conditions IC=-10uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-20V, IE=0 IC=-800mA, IB=-80mA IC=-500mA, VCE=-2V VCE=-2V, IC=-500mA VCE=-2V, IC=-500mA VCB=-10V, f=1MHz
*Pulse Test Pulse Width 380us, Duty Cycle2%
Classification
Rank Range 85-170 120-240
HSMC Product Specification
Characteristics Curve
Current Gain Collector Current
1000 1000
Spec. HE6513-B Issued Date 1993.01.15 Revised Date 2000.10.01 Page
Saturation Voltage Collector Current
VCE=2
Saturation Voltage (mV)
VCE(sat) IC=30IB
VCE(sat) IC=10IB 1000 1000 10000
Collector Current (mA)
Collector Current (mA)
Voltage Collector Current
10000 1000
Cutoff Frequency Collector Current
Cutoff Frequency (MHz)
Voltage (mV)
1000
VCE=2V
VBE(on) VCE=2V
1000 10000
1000
Collector Current (mA)
Collector Current (mA)
Capacitance Reverse-Biased Voltage
1000 10000
Safe Operating Area
Capacitance (pF)
Collector Current-IC (mA)
1000 PT=1ms PT=100ms PT=1s
Reverse Biased Voltage
Forward Voltage-VCE
HSMC Product Specification
Spec. HE6513-B Issued Date 1993.01.15 Revised Date 2000.10.01 Page
Power Derating
1000
Power Dissipation-PD(mW)
Ambient Temperature-Ta(
HSMC Product Specification
TO-92 Dimension
Spec. HE6513-B Issued Date 1993.01.15 Revised Date 2000.10.01 Page
Marking
HSMC Logo Part Number Date Code Rank Product Series
Laser Mark
HSMC Logo Product Series
Part Number
Mark Style 1.Emitter 2.Collector 3.Base
3-Lead TO-92 Plastic Package HSMC Package Code
*:Typical
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27
Notes 1.Dimension tolerance based Spec. dated Apr. 25,1996.
2.Controlling dimension millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office.
Material
Lead Alloy solder plating Mold Compound Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance.
Head Office Factory
Head Office (Hi-Sincerity Microelectronics Corp.) 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. 886-2-25212056 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C 886-3-5983621~5 886-3-5982931 Factory 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C 886-3-5977061 886-3-5979220
HSMC Product Specification

HSB562 EPITAXIAL PLANAR TRANSISTOR Description HSB562 d

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