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HM28S EPITAXIAL PLANAR TRANSISTOR Description HM28S sil
Top Searches for this datasheetSpec. HE6450 Issued Date 1992.11.25 Revised Date 2002.04.18 Page HM28S EPITAXIAL PLANAR TRANSISTOR Description HM28S silicon transistor, designed general-purpose SPEECH SYNTHSIZER (Voice Rom) audio output driver stage amplifier applications. Features Excellent Linearity High Current Gain High Power Dissipation TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature +150 Junction Temperature Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C). Maximum Voltages Currents (Ta=25°C) VCBO Collector Base Voltage. VCEO Collector Emitter Voltage VEBO Emitter Base Voltage. Collector Current 1.25 Base Current Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE1 *hFE2 hFE3 hFE4 Min. Typ. Max. 0.55 1000 Unit Test Conditions IC=100uA, IE=0 IC=1mA, IB=0 IE=100uA, IC=0 VCB=35V, IE=0 VEB=6V, IC=0 IC=600mA, IB=20mA VCE=1V, IC=1mA VCE=1V, IC=0.1A VCE=1V, IC=0.3A VCE=1V, IC=0.5A VCE=10V, IC=50mA, f=1MHz VCB=10V, f=1MHz, IE=0 *Pulse Test: Pulse Width 380us, Duty Cycle2% Classification hFE2 Rank Range HM28S 300-550 500-700 650-1000 HSMC Product Specification Characteristics Curve Current Gain Collector Current 1000 1000 VCE(sat) IC=30IB Spec. HE6450 Issued Date 1992.11.25 Revised Date 2002.04.18 Page Saturation Voltage Collector Current VCE=1V Saturation Voltage (mV) 1000 1000 Collector Current-IC (mA) Collector Current-IC (mA) Capacitance Reverse-Biased Voltage 1000 Cutoff Frequency Collector Current Cutoff Frequency (MHz). Capacitance (pF) 1000 1000 Reverse Biased Voltage Collector Current (mA) -VCE=10V Safe Operating Area 10000 Power Derating Collector Current-IC (mA) 1000 PT=1ms PT=100ms PT=1s Power Dissipation-PD(mW) Forward Biased Voltage-VCE Ambient Temperature-Ta HM28S HSMC Product Specification TO-92 Dimension Date Code Spec. HE6450 Issued Date 1992.11.25 Revised Date 2002.04.18 Page Marking: Control Code Style: 1.Emitter 2.Collector 3.Base 3-Lead TO-92 Plastic Package HSMC Package Code: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 Notes: 1.Dimension tolerance based Spec. dated Apr. 25,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office. Material: Lead: Alloy; solder plating Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance. Head Office Factory: Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HM28S HSMC Product Specification Other recent searchesVPOL20A-12W-SMT - VPOL20A-12W-SMT VPOL20A-12W-SMT Datasheet PJ20C100 - PJ20C100 PJ20C100 Datasheet PIC18F2X50 - PIC18F2X50 PIC18F2X50 Datasheet MTHF1200-WN - MTHF1200-WN MTHF1200-WN Datasheet MN102H730F - MN102H730F MN102H730F Datasheet MN102H73G - MN102H73G MN102H73G Datasheet MN102H73K - MN102H73K MN102H73K Datasheet ENN8239 - ENN8239 ENN8239 Datasheet MCH6629 - MCH6629 MCH6629 Datasheet
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