MSUNG STD150 Standard Cell 0.13um System-On-Chip ASIC 2001,

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MSUNG STD150 Standard Cell 0.13um System-On-Chip ASIC 2001,

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STD150
MSUNG
STD150 Standard Cell 0.13um System-On-Chip ASIC
2001, V1.0
Features
Analog cores Analog Interface
Ldrawn 0.13um 1.2/2.5/3.3V Device million gates Power dissipation:9nW/MHz@1.2V, 2SL, 3.3/5.0V Gate Delay: 52ps 1.2V, 2SL, Device 1.2/2.5/3.3V drive 3.3/5V tolerant (1.2V drive 3.3V tolerant developed) Compiled High-density SRAM 1.8V 3.3V ADC,DAC PLLs ARM920T/ARM940T, TeakLite/TeakHigh-density
NOTE: 2.5V 3.3V cannot used simultaneously.
1.2/2.5/3.3V
1.2/2.5/3.3V Interface 3.3/5.0V CMOS/
3.3/5.0V Tolerant
Description
Variety provided STD150 family including Processor Cores /1020E from ARM, TeakLite/TEAK from DSPG Memories High-density compiled SRAM repairable SRAM with redundancy. Analog Cores ADC, DAC, PLL, CODEC USB, PCI-X, ATA-6, LVDS, SSTL2, HSTL, PECL Samsung design methodology offers comprehensive timing driven design flow including automated time budgeting, tight floorplan synthesis integration, powerful timing analysis timing driven layout. advanced characterization flow provides accurate timing data robust delay models 0.13um very deep-submicron technology. Static verification methods such static timing analysis formal equivalence checking provide effective verification methodology with variety simulators. Samsung methodology supports scan design, BIST JTAG boundary scan. Samsung provides full testready with efficient core test integration methodology.
STD150 Samsung ASIC library, which consists standard cell products implemented 0.13um technology. STD150 utilizes seven layers interconnect metal having metal layer options products. STD150 diverse application specific digital analog system-on-chip(SOC) application. Samsung provides full range products address challenges producing high-density devices that take advantage integration. STD150 which reduced power dissipation system cost merging logic whole connecting internally from logic memory data ideal high-performance products such HDD, Network, Display. STD150 supports million gates counts logic providing usable gate. Gate delay faster than that STD130, 0.18um library. Logic compiled memory density respectively times denser than those STD130. STD150 also supports fully user-configurable compiled memory elements high-density. Each element provided compiler. highcapacity memory solution design, repairable memory containing redundancy scheme provided compiler.
Samsung ASIC
STD150 (1.2V)
PCI-X Swap
SSTL2 PECL HSTL LVDS
High speed Devices
MSUNG
Samsung ASIC Macros
Memory Compiler Analog Cores
Ultra voltage analog cores: 1.2V High resolution analog cores: 3.3V
Analog Cores Supply Voltage 3.3V± 125MHz 500KHz 10MHz 2MHz 80MHz 2.5V± 30MHz 2MHz 250MHz 8KHz 11KHz 1.2V±
CODEC
Digital Cores
Application Hard macro ARM7TDMI ARM9TDMI ARM940T ARM920T ARM946E ARM926EJ ARM1020E ETM7. ETM9 Teaklite Teak Soft macro
cores
cores
Interface cores
Communication cores Peripheral cores
STD150
Fully compiled high-density SRAM Single-port(1RW, 1R), dual-port(2RW), Duty-free cycle zero hold time Bit-write feature available Flexible column 1M-bit repairable SRAM 4M-bit high-capacity SRAM/ROM
Name Description Single Port Synchronous static 256Kbits SPSRAM with Bit-Write 256Kbits SPSRAM with Redundancy 1Mbits Dual Port Synchronous static 128Kbits DPSRAM with Bit-Write 128Kbits Synchronous Via-1 programmable 1Mbits Multi-port Synchronous Register File 1R1W, 2R1W 2R2W avaiable 16Kbits SRFRAM with Bit-Write 1R1W, 2R1W 2R2W avaiable 16Kbits Synchronous First-In First-Out Memory 64Kbits Synchronous Content Addressable Memory with Binary 32Kbits Single-Part Synchronous static SRAM with burst Read/Write Feature 4Mbits Synchronous Via-1 Programmable 4Mbits
multi-port(1R1W, 2R1W, 2R2W) synchronous
SPSRAM_HD SPSRAMBW_HD SPSRAMR_HD DPSRAM_HD DPSRAMBW_HD VROM_HD
300MHz 500MHz
SRFRAM_HD
SRFRAMBW_HD AMBA FIFO_HD*
CAM_HD* USB1.1, USB2.0, IrDA UART(16C450,16C5 IEEE1284, P1394a LINK 10/100 Ethernet HCSPSRAM_HD*
HCVROM_HD*
demand
Memory Controller Controller Timer, WDT, GPIO, SSI, Color controller smart CARD
Samsung ASIC
STD150
I/Os 1.2V, 2.5V 3.3V drive I/Os, 3.3V tolerant want 3.3V tolerant I/O, please contact technical service engineer 3-level (high, medium, slew rate control Driving capability 1,2,4,8,12mA(for drive I/Os) 1,2,4,6mA(for tolerant I/Os)
Name Description compliant, tolerant compliant, High Speed/Full Speed/ Speed Class-I SDRAM Interface ATA-6/UDMA100, 3.3/5V tolerant Ainterface 1.5V, SRAM interface pre-charge, precharge compliant, 3.3V TIA/EIA-644 200(single) 500(differential) In-house tools Frequency(MHz) 480/12/1.5Mbps
MSUNG
ASIC Design support
Design Flow Design Kits Logic Synthesis Synopsys Design Compiler Physical Synthesis Synopsys Physical Compiler Cadence Verilog-XL, Cadence NCLogic Verilog/VHDL, Mentor ModelSim-VerSimulation ilog/VHDL, Synopsys Scan Insertion Synopsys BSDCompiler, ATPG Synopsys TetraMax, Mentor Fastscan Static Timing Synopsys PrimeTime Analysis Analysis Avant! Star-RCXT Power Synopsys DesignPower, CubicPower*, Analysis Sequence WattWatcher Formal Synopsys Formality, Avant DesignVerification VERIFYer, Verplex Tuxedo-LEC Fault Cadence Verifault Simulation Delay CubicDelay* Calculator Avant! PlanetPL, Cadence DesignFloorplanner Planner, CubicPlan* Avant! Apollo, Cadence Silicon Ensemble Dracula, Hercules, Calibre
SSTL2 PECL HSTL Swap PCI-X LVDS
Package Availability
Recommended Operating Conditions
Parameter 1.2V supply voltage 2.5V 3.3V tolerant Analog Core 3.3V core supply 2.5V core voltage 1.2V/1.5V core Commercial temperature range Industrial temperature range want this range, please contact field application engineer Samsung. Rating 3.3V± 2.5V± 1.2V± Unit Package Type LQFP TQFP FBGA(PCB) FBGA(Tape) Multi Chip Package Availability Pins ,256,304 64,80,100,128,144 144,160,176,180,256 112,144,160,208 32,48,64,68,69,100,256
Samsung ASIC
MSUNG
Samsung ASIC Worldwide
Samsung Semiconductor Incorporated TASMAN DR., Jose, CA95134-1713, U.S.A. (1)-408-544-4545 (1)-408-544-4950 SWTC South West Technology Center 7700 Irvine Center Drive Suite Irvine, 92618 (1)-949-753-7530 (1)-714-236-9664 SSEG Samsung Semiconductor Europe GMBH ASIC Design Center, Representation Office Munich Carl-Zeiss-Ring 85737 Ismaning (49)-89-9697-7117 (49)-89-9697-7126 SSEL Samsung Semiconductor Europe Ltd. Great West House, Great West Road Brentford, Middlesex (44)-208-380-7115 (44)-208-380-7095 SEJA Samsung Electronics Japan Co., Ltd. ASIC Center Hamacho Center Bldg., 16th Floor 31-1, NihonbashiHamacho, 2-Chome, Chou-ku, Tokyo 103, Japan (81)-3-5641-9850(8488) (81)-3-5641-9851 CoAsia CoAsia Microelectronics Corp. Chou St., Neihu Teipei, Taiwan (886)-2-2658-2020 Ext. (886)-2-2658-0101 ComSOC ComSOC Technology Ltd., International Business Park, #04-06 Creative Resource Singapore 609921 (65)-425-2212 (65)-425-2022 HaeJu bldg. fl., Nonhyun-dong, Gangnam-gu, Seoul, Korea TEL(02)-515-4468 FAX(02)-515-4469 JoonSung bldg. fl., 698-30 Yeuksam-dong, Gangnam-gu, Seoul, Korea TEL(02)-569-1960 FAX(02)-569-2388 Dawin Tech Osuk bldg. fl., 276-6 Yangje-dong, Seocho-gu, Seoul, Korea TEL(02)-529-2826 FAX(02)-529-2827 VersaChips Boram bldg. fl., 288-2 Yangje-dong, Seocho-gu, Seoul, Korea TEL(02)-572-0756 FAX(02)-571-3857
SAMSUNG ELECTRONICS CO., LTD.
#24, Nongseo-Ri, Giheng-Eup, Yongin-City, Gyeonggi-Do, KOREA 82-031-209-6500, 6501 82-031-209-4920
2001 Samsung Electronics Co., Ltd. company product names trademarks registered trademarks their respective owners. Printed Korea.
STD150
Samsung ASIC

MSUNG STD150 Standard Cell 0.13um System-On-Chip ASIC 2001,

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