| The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers. |
HSD468 EPITAXIAL PLANAR TRANSISTOR Description HSD468 d
Top Searches for this datasheetSpec. HE6535 Issued Date 1992.11.25 Revised Date 2002.02.08 Page HSD468 EPITAXIAL PLANAR TRANSISTOR Description HSD468 designed general purpose frequency power amplifier applications. Absolute Maximum Ratings TO-92 Maximum Temperatures Storage Temperature +150 Junction Temperature Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) Maximum Voltages Currents (Ta=25°C) VCBO Collector Base Voltage VCEO Collector Emitter Voltage VEBO Emitter Base Voltage Collector Current Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) VBE(on) *hFE Min. Typ. Max. Unit Test Conditions IC=10uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=20V, IE=0 IC=0.8A, IB=80mA VCE=2V, IC=500mA VCE=2V, IC=500mA VCE=2V, IC=500mA VCB=10V, f=1MHz, IE=0 *Pulse Test: Pulse Width 380us, Duty Cycle2% Classification Rank Range 85-170 120-240 HSD468 HSMC Product Specification Characteristics Curve Current Gain Collector Current 1000 1000.0 VCE(sat) IC=10IB Spec. HE6535 Issued Date 1992.11.25 Revised Date 2002.02.08 Page Saturation Voltage Collector Current Saturation Voltage (mV) 100.0 VCE=2V 1000 10.0 1000 Collector Current-IC (mA) Collector Current-IC (mA) Voltage Collector Current 1000 Cutoff Frequency 1000 Cutoff Frequency (MHz). Voltage (mV) VCE=2V VBE(ON) VCE=2V 1000 1000 Collector Current-IC (mA) Collector Current (mA) Capacitance Reverse-Biased Voltage 10000 PT=1ms PT=100m Safe Operating Area Collector Current-IC (mA) 1000 PT=1s Capacitance (pF) 1000 Reverse Biased Voltage Forward Voltage-Vce HSD468 HSMC Product Specification Spec. HE6535 Issued Date 1992.11.25 Revised Date 2002.02.08 Page Power Temperature Derating 1000 Reflow Profile 10+/-2 Power Dissipation (mW) Temperature( 150+/-30 40+/-20 Case Temperature (°C) Time(sec) Temperature Profile Soldering 10+/-2 Temperature( 120+/-20 Time(sec) HSD468 HSMC Product Specification TO-92 Dimension Date Code Spec. HE6535 Issued Date 1992.11.25 Revised Date 2002.02.08 Page Marking: Rank Control Code Style: 1.Emitter 2.Collector 3.Base 3-Lead TO-92 Plastic Package HSMC Package Code: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 Notes: 1.Dimension tolerance based Spec. dated Apr. 25,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, minimum lead thickness minimum thickness base material. 4.If there question with packing specification packing method, please contact your local HSMC sales office. Material: Lead: Alloy; solder plating Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: rights reserved. Reproduction whole part prohibited without prior written approval HSMC. HSMC reserves right make changes products without notice. HSMC semiconductor products warranted suitable Life-Support Applications, systems. HSMC assumes liability consequence customer product design, infringement patents, application assistance. Head Office Factory: Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. Sec. Chung-Shan Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 Factory Kuang Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSD468 HSMC Product Specification Other recent searchesSHD519011 - SHD519011 SHD519011 Datasheet PCI600 - PCI600 PCI600 Datasheet MGI1253N - MGI1253N MGI1253N Datasheet MGI1254 - MGI1254 MGI1254 Datasheet MA2SD100G - MA2SD100G MA2SD100G Datasheet LX5212 - LX5212 LX5212 Datasheet IRG4BC10S - IRG4BC10S IRG4BC10S Datasheet
Privacy Policy | Disclaimer |