BC636/638/640 Switching Amplifier Applications Complement BC
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BC636/638/640
BC636/638/640
Switching Amplifier Applications
Complement BC635/637/639
TO-92
Emitter Collector Base
Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCER Parameter Collector-Emitter Voltage RBE=1K BC636 BC638 BC640 Collector-Emitter Voltage BC636 BC638 BC640 VCEO Collector-Emitter Voltage BC636 BC638 BC640 VEBO TSTG Emitter-Base Voltage Collector Current Peak Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature -1.5 -100 -100 Value -100 Units
VCES
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage BC636 BC638 BC640 Collector Cut-off Current Emitter Cut-off Current Current Gain BC636 BC638/BC640 Test Condition -10mA, IB=0 Min. VCB= -30V, IE=0 VEB= -5V, IC=0 VCE= -2V, -5mA VCE= -2V, -150mA VCE= -2V, -500mA -500mA, -50mA VCE= -2V, -500mA VCE= -5V, -10mA, f=50MHz -0.1 -0.1 -0.5 Typ. Max. Units
ICBO IEBO hFE1 hFE2 hFE3 (sat) (on)
Collector-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. August 2002
BC636/638/640
Typical Characteristics
-500
1000
IC[mA], COLLECTOR CURRENT
-400
-300
hFE, CURRENT GAIN
-200
-100
-100 -1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure Static Characteristic
Figure current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-1000
BE(sat)
IC[mA], COLLECTOR CURRENT
-100
-0.1
VCE(sat)
-0.01 -100 -1000
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure Base-Emitter Voltage
f=1MHz
Cob[pF], CAPACITANCE
-100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
Rev. August 2002
BC636/638/640
Package Dimensions
TO-92
4.58 -0.15
+0.25
0.46
14.47 ±0.40
±0.10
4.58 ±0.20
1.27TYP [1.27 ±0.20] 3.60
±0.20
1.27TYP [1.27 ±0.20]
0.38 -0.05
+0.10
3.86MAX
1.02 ±0.10
0.38 -0.05
+0.10
(R2.29)
(0.25)
Dimensions Millimeters
©2002 Fairchild Semiconductor Corporation Rev. August 2002
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PRODUCT STATUS DEFINITIONS Definition Terms
Datasheet Identification Advance Information Product Status Formative Design First Production Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Preliminary
Identification Needed
Full Production
Obsolete
Production
©2002 Fairchild Semiconductor Corporation
Rev.
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