56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Ch
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HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs manufactured using innovative UltraFET® process. This advanced process technology achieves lowest possible on-resistance silicon area, resulting outstanding performance. This device capable withstanding high energy avalanche mode diode exhibits very reverse recovery time stored charge. designed applications where power efficiency important, such switching regulators, switching converters, motor drivers, relay drivers, lowvoltage switches, power management portable battery-operated products. Formerly developmental type TA75639.
Features
56A, 100V Simulation Models Temperature Compensated PSPICE® SABERElectrical Models Spice Saber Thermal Impedance Models www.fairchildsemi.com Peak Current Pulse Width Curve Rating Curve Related Literature TB334, "Guidelines Soldering Surface Mount Components Boards"
Symbol
Ordering Information
PART NUMBER HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3 PACKAGE TO-247 TO-220AB TO-263AB TO-262AA BRAND 75639G 75639P 75639S 75639S
NOTE: When ordering, entire part number. suffix obtain TO-263AB variant tape reel, e.g., HUF75639S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE DRAIN GATE
DRAIN (TAB)
JEDEC TO-263AB
TO-262AA
SOURCE DRAIN GATE
GATE SOURCE
DRAIN (FLANGE) DRAIN (TAB)
Product reliability information found severe environments, Automotive HUFA series. Fairchild semiconductor products manufactured, assembled tested under ISO9000 QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev.
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3
Absolute Maximum Ratings
25oC, Unless Otherwise Specified Figure Figures 1.35 UNITS
Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k) (Note VDGR Gate Source Voltage Drain Current Continuous (Figure Pulsed Drain Current Pulsed Avalanche Rating Power Dissipation Derate Above 25oC Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case Package Body 10s, Techbrief Tpkg
W/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 150oC.
Electrical Specifications
PARAMETER STATE SPECIFICATIONS
25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS UNITS
Drain Source Breakdown Voltage Zero Gate Voltage Drain Current
BVDSS IDSS
250µA, (Figure 95V, 90V, 150oC
±100
Gate Source Leakage Current STATE SPECIFICATIONS Gate Source Threshold Voltage Drain Source Resistance THERMAL SPECIFICATIONS Thermal Resistance Junction Case Thermal Resistance Junction Ambient
IGSS
±20V
VGS(TH) rDS(ON)
VDS, 250µA (Figure 56A, (Figure
0.021
0.025
(Figure TO-247 TO-220, TO-263
0.74
oC/W oC/W oC/W
SWITCHING SPECIFICATIONS (VGS 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge Threshold Gate Charge Gate Source Gate Charge Gate Drain "Miller" Charge Qg(TOT) Qg(10) Qg(TH) 50V, 56A, 0.89 Ig(REF) 1.0mA (Figure td(ON) td(OFF) tOFF 50V, 56A, 0.89, 10V,
©2001 Fairchild Semiconductor Corporation
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev.
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3
Electrical Specifications
PARAMETER CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS 25V, 1MHz (Figure 2000 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS UNITS
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge SYMBOL 56A, dISD/dt 100A/µs 56A, dISD/dt 100A/µs TEST CONDITIONS 1.25 UNITS
Typical Performance Curves
POWER DISSIPATION MULTIPLIER CASE TEMPERATURE (oC) CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
ZJC, NORMALIZED THERMAL IMPEDANCE DUTY CYCLE DESCENDING ORDER 0.05 0.02 0.01 NOTES: DUTY FACTOR: t1/t2 PEAK 10-2 RECTANGULAR PULSE DURATION 10-1
SINGLE PULSE 0.01 10-5 10-4 10-3
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2001 Fairchild Semiconductor Corporation
DRAIN CURRENT
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev.
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Typical Performance Curves
1000
(Continued)
25oC
PEAK CURRENT
TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT FOLLOWS:
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION 10-5 10-4 10-3 10-2 PULSE WIDTH 10-1
FIGURE PEAK CURRENT CAPABILITY
1000 IAS, AVALANCHE CURRENT RATED 25oC DRAIN CURRENT
(L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS VDD)
STARTING 25oC STARTING 150oC
100µs
OPERATION THIS AREA LIMITED rDS(ON) DRAIN SOURCE VOLTAGE
VDSS(MAX) 100V 10ms
0.001
0.01
tAV, TIME AVALANCHE (ms)
NOTE: Refer Fairchild Application Notes AN9321 AN9322. FIGURE FORWARD BIAS SAFE OPERATING AREA FIGURE UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
DRAIN CURRENT DRAIN CURRENT
PULSE DURATION 80µs DUTY CYCLE 0.5% 175oC
PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC
25oC GATE SOURCE VOLTAGE -55oC
VDS, DRAIN SOURCE VOLTAGE
FIGURE SATURATION CHARACTERISTICS
FIGURE TRANSFER CHARACTERISTICS
©2001 Fairchild Semiconductor Corporation
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev.
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Typical Performance Curves
NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE (oC) JUNCTION TEMPERATURE (oC) PULSE DURATION 80µs DUTY CYCLE 0.5% 10V, NORMALIZED GATE
(Continued)
VDS, 250µA THRESHOLD VOLTAGE
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE 250µA
3000 2500 CAPACITANCE (pF) 1MHz CISS CRSS COSS CISS 1500 1000 COSS CRSS
2000
JUNCTION TEMPERATURE (oC) DRAIN SOURCE VOLTAGE
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
GATE SOURCE VOLTAGE
WAVEFORMS DESCENDING ORDER:
GATE CHARGE (nC)
NOTE: Refer Fairchild Application Notes AN7254 AN7260. FIGURE GATE CHARGE WAVEFORMS CONSTANT GATE CURRENT
©2001 Fairchild Semiconductor Corporation
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev.
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
Qg(TOT)
Qg(10) Qg(TH) Ig(REF)
IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORM
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev.
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 PSPICE Electrical Model
SUBCKT HUF75639
2.8e-9 2.65e-9 1.9e-9 DBODY DBODYMOD DBREAK DBREAKMOD DPLCAP DPLCAPMOD EBREAK EVTHRES EVTEMP LDRAIN 2e-9 LGATE 1e-9 LSOURCE 0.47e-9 RLGATE RLDRAIN RLSOURCE 4.69 MMED MMEDMOD MSTRO MSTROMOD MWEAK MWEAKMOD
LGATE GATE RLGATE EVTEMP RGATE DPLCAP RSLC1 ESLC EBREAK MWEAK MMED MSTRO LSOURCE RSOURCE RLSOURCE RBREAK RVTEMP SOURCE RLDRAIN DBREAK DBODY
Oct.
LDRAIN DRAIN
RSLC2
EVTHRES
RBREAK RBREAKMOD RDRAIN RDRAINMOD 1.3e-2 RGATE RSLC1 RSLCMOD 1e-6 RSLC2 RSOURCE RSOURCEMOD 4.5e-3 RVTHRES RVTHRESMOD RVTEMP RVTEMPMOD S1AMOD S1BMOD S2AMOD S2BMOD
VBAT ESLC VALUE .MODEL DBODYMOD 1.4e-12 3.3e-3 TRS1 2e-3 TRS2 0.1e-5 3.3e-9 6.1e-8 0.7) .MODEL DBREAKMOD 3.5e- 1TRS1 3TRS2 1e-6) .MODEL DPLCAPMOD (CJO 2.2e- 1e-3 0.95 1.0) .MODEL MMEDMOD NMOS (VTO 1e-30 0.7) .MODEL MSTROMOD NMOS (VTO 3.97 56.5 1e-30 .MODEL MWEAKMOD NMOS (VTO =3.11 0.085 1e-30 0.1) .MODEL RBREAKMOD (TC1 0.8e- 3TC2 1e-6) .MODEL RDRAINMOD (TC1 1e-2 1.75e-5) .MODEL RSLCMOD (TC1 2.8e-3 14e-6) .MODEL RSOURCEMOD (TC1 .MODEL RVTHRESMOD -2.0e-3 -1.75e-5) .MODEL RVTEMPMOD (TC1 -2.75e- 3TC2 0.05e-9) .MODEL S1AMOD VSWITCH (RON 1e-5 .MODEL S1BMOD VSWITCH (RON 1e-5 .MODEL S2AMOD VSWITCH (RON 1e-5 .MODEL S2AMOD VSWITCH (RON 1e-5 .ENDS ROFF ROFF ROFF ROFF -6.0 VOFF -3.5) -3.5 VOFF -6.0) -2.5 VOFF 4.95) 4.95 VOFF -2.5)
NOTE: further discussion PSPICE model, consult PSPICE Sub-Circuit Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written William Hepp Frank Wheatley.
©2001 Fairchild Semiconductor Corporation
RDRAIN
VBAT
RVTHRES
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev.
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 SABER Electrical Model
temp=25 100v Ultrafet
Oct. template huf75639 n2,n1,n3 electrical n2,n1,n3 iscl d.model dbodymod (is=1.4e-12, xti=4.7, cjo=33e-10,tt=6.1e-8, m=0.7) d.model dbreakmod d.model dplcapmod vj=1.0) m.model mmedmod tox=1) m.model mstrongmod tox=1) m.model mweakmod tox=1) sw_vcsp.model s1amod sw_vcsp.model s1bmod sw_vcsp.model s2amod sw_vcsp.model s2bmod
LDRAIN DPLCAP RSLC1 RSLC2 ISCL RLDRAIN RDBREAK DBREAK MWEAK DBODY MMED MSTRO EBREAK RDBODY DRAIN
EVTHRES
RDRAIN
c.ca 28.5e-10 c.cb 26.5e-10 c.cin 19e-10 d.dbody model=dbodymod d.dbreak model=dbreakmod d.dplcap model=dplcapmod i.it l.ldrain 2.0e-9 l.lgate 1e-9 l.lsource 4.69e-10
GATE
LGATE
EVTEMP RGATE
RLGATE
RSOURCE
LSOURCE RLSOURCE SOURCE
RBREAK RVTEMP
m.mmed model=mmedmod, l=1u, w=1u m.mstrong model=mstrongmod, l=1u, w=1u m.mweak model=mweakmod, l=1u, w=1u res.rbreak tc1=0.8e-3,tc2=-1e-6 res.rdbody 3.3e-3, tc1=2.0e-3, tc2=0.1e-5 res.rdbreak 3.5e-1, tc1=1e-3, tc2=1e-6 res.rdrain 13e-3, tc1=1e-2,tc2=1.75e-5 res.rgate res.rldrain res.rlgate res.rlsource 4.69 res.rslc1 1e-6, tc1=2.8e-3,tc2=14e-6 res.rslc2 res.rsource 4.5e-3, tc1=0,tc2=0 res.rvtemp tc1=-2.75e-3,tc2=0.05e-9 res.rvthres tc1=-2e-3,tc2=-1.75e-5 spe.ebreak spe.eds spe.egs spe.esg spe.evtemp spe.evthres sw_vcsp.s1a model=s1amod sw_vcsp.s1b model=s1bmod sw_vcsp.s2a model=s2amod sw_vcsp.s2b model=s2bmod v.vbat dc=1
VBAT
RVTHRES
equations (n51->n50) +=iscl iscl: v(n51,n50)
©2001 Fairchild Semiconductor Corporation
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev.
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Spice Thermal Model
APRIL 1998 HUF75639 CTHERM1 2.8e-3 CTHERM2 4.6e-3 CTHERM3 5.5e-3 CTHERM4 9.2e-3 CTHERM5 1.7e-2 CTHERM6 4.3e-2 RTHERM1 5.0e-4 RTHERM2 1.5e-3 RTHERM3 2.0e-2 RTHERM4 9.0e-2 RTHERM5 1.9e-1 RTHERM6 2.9e-1
RTHERM1 CTHERM1 JUNCTION
RTHERM2
CTHERM2
RTHERM3
CTHERM3
Saber Thermal Model
Saber thermal model HUF75639 template thermal_model thermal_c ctherm.ctherm1 2.8e-3 ctherm.ctherm2 4.6e-3 ctherm.ctherm3 5.5e-3 ctherm.ctherm4 9.2e-3 ctherm.ctherm5 1.7e-2 ctherm.ctherm6 4.3e-2 rtherm.rtherm1 5.0e-4 rtherm.rtherm2 1.5e-3 rtherm.rtherm3 2.0e-2 rtherm.rtherm4 9.0e-2 rtherm.rtherm5 1.9e-1 rtherm.rtherm6 2.9e-1
RTHERM4
CTHERM4
RTHERM5
CTHERM5
RTHERM6
CTHERM6
CASE
©2001 Fairchild Semiconductor Corporation
HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev.
TRADEMARKS
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FAST
QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER
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STAR*POWER used under license
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Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
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