2N5210/MMBT5210 General Purpose Amplifier This device design

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2N5210/MMBT5210 General Purpose Amplifier This device design

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2N5210/MMBT5210
2N5210/MMBT5210
General Purpose Amplifier
This device designed noise, high gain, general purpose amplifier applications collector currents from
TO-92
SOT-23
Mark:
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous
25°C unless otherwise noted
Parameter
Value
+150
Units
Operating Storage Junction Temperature Range
*These ratings limiting values above which serviceability semiconductor device impaired.
NOTES: These ratings based maximum junction temperature degrees These steady state limits. factory should consulted applications involving pulsed duty cycle operations.
Thermal Characteristics
Symbol
25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction Case Thermal Resistance, Junction Ambient
Max.
2N5210 83.3 MMBT5210
Units
mW/°C °C/W °C/W
2002 Fairchild Semiconductor Corporation
2N5210,
2N5210/MMBT5210
General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
25°C unless otherwise noted
Test Conditions
Units
CHARACTERISTICS
V(BR)CEO V(BR)CBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current
CHARACTERISTICS
Current Gain
VCE(sat) VBE(on)
Collector-Emitter Saturation Voltage Base-Emitter Voltage
0.85
SMALL SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product Collector-Base Capacitance Small-Signal Current Gain Noise Figure µA,VCE 15.7
*Pulse Test: Pulse Width Duty Cycle 2.0%
2N5210/MMBT5210
General Purpose Amplifier
(continued)
Typical Characteristics
1200
VBEON BASE-EMITTER VOLTAGE
TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain Collector Current
1000
Collector-Emitter Saturation Voltage Collector Current
0.30
5.0V
0.25
0.20
0.15
0.10
0.05
0.01
0.03
COLLECTOR CURRENT
COLLECTOR CURR
VBESAT COLLECTOR-EMITTER VOLTAGE
VBEON BASE-EMITTER VOLTAGE
Base-Emitter Saturation Voltage Collector Current
Base-Emitter Voltage Collector Current
5.0V
COLLECTO CURRENT (mA)
COLLECTO CURRENT
Collector-Cutoff Current Ambient Temperature
COLLE CTOR CURRENT (nA)
AMBIE TEMP ERATURE
2N5210/MMBT5210
General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Input Output Capacitance Reverse Bias Voltage
CAPACITANCE (pF)
Contours Constant Gain Bandwidth Product
COLLECTOR VOLTAGE
REVERSE BIAS VOLTAGE
COLLECTOR CURRENT (mA)
CHARACTERIS RELATI VALUE
Normalized Collector-Cutoff Current Ambient Temperature
1000
Wideband Noise Frequency Source Resistance
NOISE FIGURE (dB)
BANDWIDTH 15.7
2,000 5,000 10,000 20,000 50,000 100,000
AMBIE TEMPERATURE
1,000
SOURCE RESISTANCE
Noise Figure Frequency
POWER DISSIPATION
NOISE FIGURE (dB)
Base-Emitter Saturation Voltage Collector Current
1.00
0.75
TO-92
0.50
5.0V
SOT-23
0.25
0.0001
0.001
0.01 FREQUENCY (MHz)
0.00
TEMPERATURE
2N5210/MMBT5210
General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Contours Constant Narrow Band Noise Figure
SOURCE RESISTANCE
5,000
Contours Constant Narrow Band Noise Figure
SOURCE RESISTANCE
10,000 5,000
10,000
2,000 1,000
BANDWIDTH
2,000
1,000
BANDWIDTH
COLLECTOR CURRENT
1,000
COLLECTOR CURRENT
1,000
Contours Constant Narrow Band Noise Figure
SOURCE RESISTANCE 5000 2000 1000 5.0V 10kHz BANDWIDTH 2.0kHz SOURCE RESISTANCE 10000
Contours Constant Narrow Band Noise Figure
10000 5000 2000 1000
COLLECTOR CURRENT
1000
5.0V BANDWIDTH 200kHz 0.01 COLLECTOR CURRENT
2N5210/MMBT5210
General Purpose Amplifier
(continued)
Typical Common Emitter Characteristics
kHz)
CHARACTERISTI RELATI VALUE(VCE =5V)
CHARACTE STICS LATIV =25°
Typical Common Emitter Characteristics
Typical Common Emitter Characteristics
-100
5.0V 1.0kHz 1.0mA
1.0mA 1.0kHz 25°C COLLECTOR VOLTAGE
JUNCTIO TEMP ERATURE
Typical Common Emitter Characteristics
CHARACTERISTICS RELATIVE VALUE(I =1mA)
1.0kHz
0.01
COLLECTOR CURRENT (mA)
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER
SMART SuperSOTTM-6 SuperSOTTM-8
VCX
STAR*POWER used under license
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life systems which, intended surgical implant into support device system whose failure perform body, support sustain life, whose reasonably expected cause failure life failure perform when properly used accordance support device system, affect safety with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

2N5210/MMBT5210 General Purpose Amplifier This device design

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