FQT5P10 100V P-Channel MOSFET General Description These

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FQT5P10 100V P-Channel MOSFET General Description These

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FQT5P10
FQT5P10
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology been especially tailored minimize on-state resistance, provide superior switching performance, withstand high energy pulse avalanche commutation mode. These devices well suited voltage applications such audio amplifier, high efficiency switching DC/DC converters, motor control.
Features
-1.0A, -100V, RDS(on) 1.05 @VGS gate charge typical Crss typical Fast switching Improved dv/dt capability
SOT-223
Series
Absolute Maximum Ratings
Symbol VDSS VGSS dv/dt TSTG
25°C unless otherwise noted
Parameter Drain-Source Voltage Continuous 25°C) Drain Current Continuous 70°C) Drain Current Pulsed
(Note
FQT5P10 -100 -1.0 -0.8 -4.0
(Note (Note (Note (Note
Units V/ns W/°C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation 25°C)
-1.0 -6.0 0.016 +150
Derate above 25°C Operating Storage Temperature Range Maximum lead temperature soldering purposes, 1/8" from case seconds
Thermal Characteristics
Symbol Parameter Thermal Resistance, Junction-to-Ambient -Max 62.5 Units °C/W
When mounted minimum size recommended (PCB Mount)
©2002 Fairchild Semiconductor Corporation
Rev. August 2002
FQT5P10
Electrical Characteristics
Symbol Parameter
25°C unless otherwise noted
Test Conditions
Units
Characteristics
BVDSS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse -250 -250 Referenced 25°C -100 125°C -100 -0.1 -100 V/°C
Characteristics
VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VGS, -250 -0.5 -0.5
(Note
-2.0
-0.82
-4.0 1.05
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -190
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge -4.5
(Note
-4.5
(Note
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current -1.0 Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -4.5 A/µs
(Note
0.27
-1.0 -4.0 -4.0
Notes: Repetitive Rating Pulse width limited maximum junction temperature 83mH, -1.0A, -25V, Starting 25°C -4.5A, di/dt 300A/µs, BVDSS, Starting 25°C Pulse Test Pulse width 300µs, Duty cycle Essentially independent operating temperature
©2002 Fairchild Semiconductor Corporation
Rev. August 2002
FQT5P10
Typical Characteristics
Drain Current
Drain Current
-15.0 -10.0 -8.0 -7.0 -6.5 -5.5 -5.0 Bottom -4.5
Notes -40V Pulse Test
Note Pulse Test
-VDS, Drain-Source Voltage
-VGS Gate-Source Voltage
Figure On-Region Characteristics
Figure Transfer Characteristics
RDS(on) Drain-Source On-Resistance
Reverse Drain Current
Note
Notes Pulse Test
Drain Current
-VSD Source-Drain Voltage
Figure On-Resistance Variation Drain Current Gate Voltage
Figure Body Diode Forward Voltage Variation Source Current Temperature
Ciss (Cds shorted) Coss Crss
Coss
-20V -50V -80V
Ciss
Notes
Gate-Source Voltage
Capacitance [pF]
Crss
Note -4.5
-VDS, Drain-Source Voltage
Total Gate Charge [nC]
Figure Capacitance Characteristics
Figure Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Rev. August 2002
FQT5P10
Typical Characteristics
(Continued)
(Norm alized) Drain-Source Breakdown Voltage
RDS(ON) (Normalized) Drain-Source On-Resistance
Notes -0.5
Notes -250
-100
-100
Junction Temperature
Junction Temperature
Figure Breakdown Voltage Variation Temperature
Figure On-Resistance Variation Temperature
Operation This Area Limited DS(on)
-ID, Drain Current
Notes Single Pulse
-ID, Drain Current
-VDS, Drain-Source Voltage
Case Temperature
Figure Maximum Safe Operating Area
Figure Maximum Drain Current Case Temperature
(t),
Figure Transient Thermal Response Curve
©2002 Fairchild Semiconductor Corporation
Rev. August 2002
FQT5P10
Gate Charge Test Circuit Waveform
200nF 300nF
Same Type
-10V
-3mA
Charge
Resistive Switching Test Circuit Waveforms
td(on)
td(off)
-10V
Unclamped Inductive Switching Test Circuit Waveforms
BVDSS IAS2 BVDSS
Time
BVDSS
-10V
©2002 Fairchild Semiconductor Corporation
Rev. August 2002
FQT5P10
Peak Diode Recovery dv/dt Test Circuit Waveforms
Driver
Compliment (N-Channel)
dv/dt controlled controlled pulse period
Driver
Gate Pulse Width -Gate Pulse Period
Body Diode Reverse Current
di/dt Body Diode Forward Current
Body Diode Forward Voltage Drop Body Diode Recovery dv/dt
©2002 Fairchild Semiconductor Corporation
Rev. August 2002
FQT5P10
Package Dimensions
SOT-223
0.08MAX MAX1.80 1.75 ±0.20 3.50 ±0.20 (0.60)
3.00 ±0.10
0.65 ±0.20
+0.04
0.06 -0.02
2.30 (0.95) 4.60 ±0.25
0.70 ±0.10 (0.95) 0.25 -0.05
+0.10
(0.60)
1.60 ±0.20
(0.46)
(0.89)
6.50 ±0.20
Dimensions Millimeters
©2002 Fairchild Semiconductor Corporation Rev. August 2002
7.00 ±0.30
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
ACExFACTActiveArrayFACT Quiet seriesBottomlessFAST® board. Around world.The Power FranchiseProgrammable Active DroopDISCLAIMER
OPTOPLANAR
PACMANPOPPower247PowerTrench® QFETQSQT OptoelectronicsQuiet SWITCHER® SMART START
SPMStealthSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 VCX
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices systems critical component component life support which, intended surgical implant into body, device system whose failure perform support sustain life, whose failure perform reasonably expected cause failure life support when properly used accordance with instructions device system, affect safety effectiveness. provided labeling, reasonably expected result significant injury user.
PRODUCT STATUS DEFINITIONS Definition Terms
Datasheet Identification Advance Information Product Status Formative Design First Production Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Preliminary
Identification Needed
Full Production
Obsolete
Production
©2002 Fairchild Semiconductor Corporation
Rev.

FQT5P10 100V P-Channel MOSFET General Description These

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