FQT13N06 N-Channel MOSFET General Description These N-C

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FQT13N06 N-Channel MOSFET General Description These N-C

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FQT13N06
FQT13N06
N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology been especially tailored minimize on-state resistance, provide superior switching performance, withstand high energy pulse avalanche commutation mode. These devices well suited voltage applications such DC/DC converters, high efficiency switching power management portable battery operated products.
Features
2.8A, 60V, RDS(on) 0.14 @VGS gate charge typical Crss typical Fast switching Improved dv/dt capability
SOT-223
Series
Absolute Maximum Ratings
Symbol VDSS VGSS dv/dt TSTG
25°C unless otherwise noted
Parameter Drain-Source Voltage Continuous 25°C) Drain Current Continuous 70°C) Drain Current Pulsed
(Note
FQT13N06 2.24 11.2
(Note (Note (Note (Note
Units V/ns W/°C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation 25°C)
0.21 0.017 +150
Derate above 25°C Operating Storage Temperature Range Maximum lead temperature soldering purposes, 1/8" from case seconds
Thermal Characteristics
Symbol Parameter Thermal Resistance, Junction-to-Ambient -Max Units °C/W
When mounted minimum size recommended (PCB Mount)
©2002 Fairchild Semiconductor Corporation
Rev.
FQT13N06
Electrical Characteristics
Symbol Parameter
25°C unless otherwise noted
Test Conditions
Units
Characteristics
BVDSS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Referenced 25°C 150°C -0.06 -100 V/°C
Characteristics
VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VGS,
(Note
-0.11
0.14
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -240
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
(Note
(Note
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge A/µs
(Note
11.2
Notes: Repetitive Rating Pulse width limited maximum junction temperature 12.6mH, 2.8A, 25V, Starting 25°C 13A, di/dt 300A/us, BVDSS, Starting 25°C Pulse Test Pulse width 300µs, Duty cycle Essentially independent operating temperature
©2002 Fairchild Semiconductor Corporation
Rev.
FQT13N06
Typical Characteristics
Drain Current
Drain Current
15.0 10.0 Bottom
Notes Pulse Test
Notes Pulse Test
VDS, Drain-Source Voltage
VGS, Gate-Source Voltage
Figure On-Region Characteristics
Figure Transfer Characteristics
RDS(ON) Drain-Source On-Resistance
Reverse Drain Current
Note
Notes Pulse Test
Drain Current
VSD, Source-Drain voltage
Figure On-Resistance Variation Drain Current Gate Voltage
Figure Body Diode Forward Voltage Variation Source Current Temperature
Ciss (Cds shorted) Coss Crss
Ciss Coss
Notes
VGS, Gate-Source Voltage
Capacitance [pF]
Crss
Note
VDS, Drain-Source Voltage
Total Gate Charge [nC]
Figure Capacitance Characteristics
Figure Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Rev.
FQT13N06
Typical Characteristics
(Continued)
(Normalized) Drain-Source Breakdown Voltage
RDS(ON) (Normalized) Drain-Source On-Resistance
Notes
Notes
-100
-100
Junction Temperature
Junction Temperature
Figure Breakdown Voltage Variation Temperature
Figure On-Resistance Variation Temperature
Operation This Area Limited DS(on)
Drain Current
Drain Current
Notes Single Pulse
VDS, Drain-Source Voltage
Case Temperature
Figure Maximum Safe Operating Area
Figure Maximum Drain Current Case Temperature
(t),
Figure Transient Thermal Response Curve
©2002 Fairchild Semiconductor Corporation
Rev.
FQT13N06
Gate Charge Test Circuit Waveform
200nF 300nF
Same Type
Charge
Resistive Switching Test Circuit Waveforms
td(on)
td(off)
Unclamped Inductive Switching Test Circuit Waveform
BVDSS IAS2 BVDSS BVDSS
Time
©2002 Fairchild Semiconductor Corporation
Rev.
FQT13N06
Peak Diode Recovery dv/dt Test Circuit Waveforms
Driver
Same Type
dv/dt controlled controlled pulse period
Driver
Gate Pulse Width -Gate Pulse Period
Body Diode Forward Current
di/dt
Body Diode Reverse Current
Body Diode Recovery dv/dt
Body Diode Forward Voltage Drop
©2002 Fairchild Semiconductor Corporation
Rev.
FQT13N06
Package Dimensions
SOT-223
0.08MAX MAX1.80 1.75 ±0.20 3.50 ±0.20 (0.60)
3.00 ±0.10
0.65 ±0.20
+0.04
0.06 -0.02
2.30 (0.95) 4.60 ±0.25
0.70 ±0.10 (0.95) 0.25 -0.05
+0.10
(0.60)
1.60 ±0.20
(0.46)
(0.89)
6.50 ±0.20
Dimensions Millimeters
©2002 Fairchild Semiconductor Corporation Rev.
7.00 ±0.30
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet Series
FAST®
QFETQSQT OptoelectronicsQuiet SeriesSLIENT SWITCHER®
SMART SuperSOTTM-6 SuperSOTTM-8
VCX
STAR*POWER used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices systems which, intended surgical implant into body, support sustain life, whose failure perform when properly used accordance with instructions provided labeling, reasonably expected result significant injury user. critical component component life support device system whose failure perform reasonably expected cause failure life support device system, affect safety effectiveness.
PRODUCT STATUS DEFINITIONS Definition Terms
Datasheet Identification Advance Information Product Status Formative Design First Production Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Preliminary
Identification Needed
Full Production
Obsolete
Production
©2002 Fairchild Semiconductor Corporation
Rev.

FQT13N06 N-Channel MOSFET General Description These N-C

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