FQPF9P25 250V P-Channel MOSFET General Description Thes

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

FQPF9P25 250V P-Channel MOSFET General Description Thes

Datasheet Thumbnail

Top Searches for this datasheet

FQPF9P25
FQPF9P25
250V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology especially tailored minimize on-state resistance, provide superior switching performance, withstand high energy pulse avalanche commutation modes. These devices well suited high efficiency switching DC/DC converters.
Features
-6.0A, -250V, RDS(on) 0.62 @VGS gate charge typical Crss typical Fast switching 100% avalanche tested Improved dv/dt capability
TO-220F
FQPF Series
Absolute Maximum Ratings
Symbol VDSS VGSS dv/dt TSTG
25°C unless otherwise noted
Parameter Drain-Source Voltage Continuous 25°C) Drain Current Continuous 100°C) Drain Current Pulsed
(Note
FQP9P25 -250 -6.0 -3.9
(Note (Note (Note (Note
Units V/ns W/°C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation 25°C)
-6.0 -5.5 +150
Derate above 25°C Operating Storage Temperature Range Maximum lead temperature soldering purposes, 1/8" from case seconds
Thermal Characteristics
Symbol Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient -Max 62.5 Units °C/W °C/W
©2000 Fairchild Semiconductor International
Rev.
FQPF9P25
Electrical Characteristics
Symbol Parameter
25°C unless otherwise noted
Test Conditions
Units
Characteristics
BVDSS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse -250 -250 Referenced 25°C -250 -200 125°C -250 -0.2 -100 V/°C
Characteristics
VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VGS, -250 -3.0 -3.0
(Note
-3.0
-0.48
-5.0 0.62
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -910 1180
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge -125 -9.4
(Note
-200 -9.4
(Note
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current -6.0 Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -9.4 A/µs
(Note
-190 1.45
-6.0 -5.0
Notes: Repetitive Rating Pulse width limited maximum junction temperature 28.9mH, -6.0A, -50V, Starting 25°C -9.4A, di/dt 300A/µs, BVDSS, Starting 25°C Pulse Test Pulse width 300µs, Duty cycle Essentially independent operating temperature
©2000 Fairchild Semiconductor International
Rev.
FQPF9P25
Typical Characteristics
Drain Current
Drain Current
-15.0 -10.0 -8.0 -7.0 -6.5 -6.0 Bottom -5.5
Notes Pulse Test
Notes -50V Pulse Test
-VDS, Drain-Source Voltage
-VGS Gate-Source Voltage
Figure On-Region Characteristics
Figure Transfer Characteristics
RDS(on) Drain-Source On-Resistance
Reverse Drain Current
Note
Notes Pulse Test
Drain Current
-VSD Source-Drain Voltage
Figure On-Resistance Variation Drain Current Gate Voltage
Figure Body Diode Forward Voltage Variation Source Current Temperature
2400
Ciss (Cds shorted) Coss Crss
-50V
2000
-125V -200V
Gate-Source Voltage
1600
Capacitance [pF]
Ciss
1200
Coss
Notes
Crss
Note -9.4
-VDS, Drain-Source Voltage
Total Gate Charge [nC]
Figure Capacitance Characteristics
Figure Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev.
FQPF9P25
Typical Characteristics
(Continued)
(Normalized) Drain-Source Breakdown Voltage
RDS(ON) (Normalized) Drain-Source On-Resistance
Notes -4.7
Notes -250
-100
-100
Junction Temperature
Junction Temperature
Figure Breakdown Voltage Variation Temperature
Figure On-Resistance Variation Temperature
Operation This Area Limited DS(on)
Drain Current
Drain Current
Notes Single Pulse
-VDS, Drain-Source Voltage
Case Temperature
Figure Maximum Safe Operating Area
Figure Maximum Drain Current Case Temperature
Figure Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev.
FQPF9P25
Gate Charge Test Circuit Waveform
200nF 300nF
Same Type
-10V
-3mA
Charge
Resistive Switching Test Circuit Waveforms
td(on)
td(off)
-10V
Unclamped Inductive Switching Test Circuit Waveforms
BVDSS IAS2 BVDSS
Time
BVDSS
-10V
©2000 Fairchild Semiconductor International
Rev.
FQPF9P25
Peak Diode Recovery dv/dt Test Circuit Waveforms
Driver
Compliment (N-Channel)
dv/dt controlled controlled pulse period
Driver
Gate Pulse Width -Gate Pulse Period
Body Diode Reverse Current
di/dt Body Diode Forward Current
Body Diode Forward Voltage Drop Body Diode Recovery dv/dt
©2000 Fairchild Semiconductor International
Rev.
FQPF9P25
Package Dimensions
TO-220F
3.30 ±0.10 10.16 ±0.20 (7.00) ±0.10 2.54 ±0.20 (0.70)
6.68 ±0.20
15.80 ±0.20
(1.00x45°)
MAX1.47 9.75 ±0.30 0.80 ±0.10
0.35 ±0.10 2.54TYP [2.54 ±0.20]
0.50 -0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20
+0.10
2.76 ±0.20
9.40 ±0.20
©2000 Fairchild Semiconductor International
Rev.
15.87 ±0.20
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesFAST® FASTrGTO
QFETQSQuiet SeriesSuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTinyLogicUHCVCX
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR INTERNATIONAL. used herein: Life support devices systems devices systems which, intended surgical implant into body, support sustain life, whose failure perform when properly used accordance with instructions provided labeling, reasonably expected result significant injury user. critical component component life support device system whose failure perform reasonably expected cause failure life support device system, affect safety effectiveness.
PRODUCT STATUS DEFINITIONS Definition Terms
Datasheet Identification Advance Information Product Status Formative Design First Production Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Preliminary
Identification Needed
Full Production
Obsolete
Production
©2000 Fairchild Semiconductor International
Rev. January 2000

FQPF9P25 250V P-Channel MOSFET General Description Thes

Top Searches for this datasheet

Other recent searches