22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel pow

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22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel pow

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RFP22N10, RF1S22N10SM
22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs
These N-Channel power MOSFETs manufactured using MegaFET process. This process, which uses feature sizes approaching those integrated circuits gives optimum utilization silicon, resulting outstanding performance. They were designed applications such switching regulators, switching converters, motor drivers, relay drivers. These transistors operated directly from integrated circuits. Formerly developmental type TA9845.
Features
22A, 100V rDS(ON) 0.080 Rating Curve (Single Pulse) Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance 175oC Operating Temperature Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Ordering Information
PART NUMBER RFP22N10 RF1S22N10SM PACKAGE TO-220AB TO-263AB BRAND RFP22N10 F1S22N10
Symbol
NOTE: When ordering entire part number. suffix, obtain TO-263AB variant tape reel, e.g. RF1S22N10SM9A.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE)
JEDEC TO-263AB
DRAIN (FLANGE)
©2002 Fairchild Semiconductor Corporation
RFP22N10, RF1S22N10SM Rev.
RFP22N10, RF1S22N10SM
Absolute Maximum Ratings 25oC, Unless Otherwise Specified
RFP22N10, RF1S22N10SMS Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS (Note .VDGR Gate Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief .Tpkg 0.67 UNITS W/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 150oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, (Figure VDS, 250µA (Figure 80V, 80V, 150oC 80V, 22A, 3.64 Ig(REF) (Figure TO-220 TO-263 ±100 0.080 UNITS
oC/W oC/W
Drain Source Breakdown Voltage Gate Source Threshold Voltage Zero-Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance (Note Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Thermal Resistance Junction Case Thermal Resistance Junction Ambient
IGSS rDS(ON) t(ON) td(ON) td(OFF) t(OFF) QG(TOT) QG(10) QG(TH)
±20V, 22A, (Figure 50Vwwwwwwwww, 11A, 4.5, 10V, (Figure
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage (Note Diode Reverse Recovery Time NOTE: Pulse Test: Pulse Duration 300µs maximum, duty cycle SYMBOL 22A, dISD/dt 100A/µs TEST CONDITIONS UNITS
©2002 Fairchild Semiconductor Corporation
RFP22N10, RF1S22N10SM Rev.
RFP22N10, RF1S22N10SM Typical Performance Curves
POWER DISSIPATION MULTIPLIER CASE TEMPERATURE (oC) DRAIN CURRENT
Unless otherwise Specified
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
(CONTINUOUS) DRAIN CURRENT OPERATION THIS AREA LIMITED rDS(ON)
OPERATION
IAS, AVALANCHE CURRENT
RATED SINGLE PULSE 25oC
STARTING 25oC STARTING 150oC (L)(IAS)/(1.3 RATED BVDSS VDD) (L/R)ln[(IAS R)/(1.3 RATED BVDSS VDD) tAV, TIME AVALANCHE (ms)
VDSS(MAX) 100V DRAIN SOURCE VOLTAGE
0.01
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
DRAIN CURRENT DRAIN CURRENT
PULSE DURATION 80µs DUTY CYCLE 0.5% MAX. -55oC 175oC 25oC
PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC
DRAIN SOURCE VOLTAGE GATE SOURCE VOLTAGE
FIGURE SATURATION CHARACTERISTICS
FIGURE TRANSER CHARACTERISTICS
©2002 Fairchild Semiconductor Corporation
RFP22N10, RF1S22N10SM Rev.
RFP22N10, RF1S22N10SM Typical Performance Curves
NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE NORMALIZED DRAIN SOURCE RESISTANCE 250µA
Unless otherwise Specified (Continued)
22A, PULSE DURATION 80µs DUTY CYCLE 0.5%
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
1.50 250µA NORMALIZED GATE THRESHOLD VOLTAGE 1.25 1.00 0.75 0.50 0.25 CAPACITANCE (pF)
2500 1MHz CISS CRSS COSS
2000
1500 CISS
1000
CRSS JUNCTION TEMPERATURE (oC)
COSS
DRAIN SOURCE VOLTAGE
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
VDS, DRAIN SOURCE VOLTAGE
VGS, GATE SOURCE VOLTAGE GATE SOURCE VOLTAGE 4.55 IG(REF)
VDSS
VDSS
0.75VDSS 0.50VDSS 0.25VDSS 0.75VDSS 0.50VDSS 0.25VDSS
DRAIN SOURCE VOLTAGE IG(REF) IG(ACT) TIME (µs) IG(REF) IG(ACT)
NOTE: Refer Fairchild Application Notes AN7254 AN7260. FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
©2002 Fairchild Semiconductor Corporation
RFP22N10, RF1S22N10SM Rev.
RFP22N10, RF1S22N10SM Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
tOFF td(OFF)
td(ON)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
Qg(TOT)
IG(REF) IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RFP22N10, RF1S22N10SM Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER
SMART SuperSOTTM-6 SuperSOTTM-8
VCX
STAR*POWER used under license
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life systems which, intended surgical implant into support device system whose failure perform body, support sustain life, whose reasonably expected cause failure life failure perform when properly used accordance support device system, affect safety with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs These N-Channel pow

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