12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs RFP12P08, RFP12P10

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12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs RFP12P08, RFP12P10

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RFP12P08, RFP12P10
12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs
RFP12P08, RFP12P10 P-Channel enhancement mode silicon gate power field effect transistors designed applications such switching regulators, switching convertors, motor drivers, relay drivers, drivers high power bipolar switching transistors requiring high speed gate drive power. These types operated directly from integrated circuits. Formerly developmental type TA17511.
Features
12A, 100V rDS(ON) 0.300 Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Ordering Information
PART NUMBER RFP12P08 RFP12P10 PACKAGE TO-220AB TO-220AB BRAND RFP12P08 RFP12P10
Symbol
NOTE: When ordering, include entire part number.
Packaging
TO-220AB
SOURCE DRAIN GATE
DRAIN (TAB)
©2002 Fairchild Semiconductor Corporation
RFP12P08, RFP12P10 Rev.
RFP12P08, RFP12P10
Absolute Maximum Ratings
25oC, Unless Otherwise Specified RFP12P08 Drain Source Voltage (Note Drain Gate Voltage (RGS 20K) (Note VDGR Continuous Drain Current Continuous Pulsed Drain Current (Note Gate Source Voltage Maximum Power Dissipation Linear Derating Factor Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg W/oC
RFP12P10 -100 -100
UNITS
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS 250µA, -100 VGS(TH) IDSS VDS, 250µA Rated BVDSS, Rated BVDSS, 125oC -25V, 1MHz (Figure RFP12P08, RFP12P10 ±100 -3.6 0.300 1500 1.67
oC/W
UNITS
Drain Source Breakdown Voltage RFP12P08 RFP12P10 Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Voltage (Note Drain Source Resistance (Note Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance, Junction Case
IGSS VDS(ON) rDS(ON) td(ON) td(OFF) CISS COSS CRSS
±20V, 12A, -10V 12A, -10V, (Figures 12A, 50V, 4.1, -10V (Figure
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage (Note Diode Reverse Recovery Time NOTES: Pulse Test: Pulse Width 300µs Max, Duty Cycle Repetitive rating: pulse width limited maximum junction temperature. SYMBOL TEST CONDITIONS -12A -12A, dISD/dt 100A/µs UNITS
©2002 Fairchild Semiconductor Corporation
RFP12P08, RFP12P10 Rev.
RFP12P08, RFP12P10 Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT CASE TEMPERATURE (oC)
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
OPERATION THIS AREA LIMITED rDS(ON) DRAIN CURRENT CONTINUOUS
25oC RATED DRAIN CURRENT
PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC -20V
-10V
RFP12P08 RFP12P10
VDS, DRAIN SOURCE
1000
VDS, DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE SATURATION CHARACTERISTICS
IDS(ON), DRAIN SOURCE CURRENT
-10V PULSE DURATION 80µs DUTY CYCLE 0.5% -40oC 25oC
-10V PULSE DURATION 80µs DUTY CYCLE 0.5% DRAIN SOURCE RESISTANCE 125oC
125oC
25oC -40oC
125oC -40oC VGS, GATE SOURCE VOLTAGE
DRAIN CURRENT
FIGURE TRANSFER CHARACTERISTICS
FIGURE DRAIN SOURCE RESISTANCE GATE VOLTAGE DRAIN CURRENT
©2002 Fairchild Semiconductor Corporation
RFP12P08, RFP12P10 Rev.
RFP12P08, RFP12P10 Typical Performance Curves
NORMALIZED DRAIN SOURCE RESISTANCE 12A, -10V PULSE DURATION 80µs DUTY CYCLE 0.5% NORMALIZED GATE THRESHOLD VOLTAGE
(Continued)
250µA
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
2400 2000 CAPACITANCE (PF) 1600 1200 COSS CRSS VDS, DRAIN SOURCE VOLTAGE CISS 1MHz CISS CRSS COSS
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
VDS, DRAIN SOURCE VOLTAGE BVDSS BVDSS GATE SOURCE VOLTAGE IG(REF) 0.92mA -10V VGS, GATE SOURCE VOLTAGE
0.75BVDSS 0.75BVDSS 0.50BVDSS 0.50BVDSS 0.25BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE
IG(REF) IG(ACT)
TIME (µs)
IG(REF) IG(ACT)
NOTE: Refer Fairchild Application Notes AN7254 AN7260 FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
td(ON) tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RFP12P08, RFP12P10 Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER
SMART SuperSOTTM-6 SuperSOTTM-8
VCX
STAR*POWER used under license
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life systems which, intended surgical implant into support device system whose failure perform body, support sustain life, whose reasonably expected cause failure life failure perform when properly used accordance support device system, affect safety with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs RFP12P08, RFP12P10

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