12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs These N-Channel enha

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs These N-Channel enha

Datasheet Thumbnail

Top Searches for this datasheet

RFD3055, RFD3055SM, RFP3055
12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
These N-Channel enhancement mode silicon gate power field effect transistors. They advanced power MOSFETs designed, tested, guaranteed withstand specified level energy breakdown avalanche mode operation. these power MOSFETs designed applications such switching regulators, switching convertors, motor drivers, relay drivers, drivers high power bipolar switching transistors requiring high speed gate drive power. These types operated directly from integrated circuits. Formerly developmental type TA49082.
Features
12A, rDS(ON) 0.150 Temperature Compensating PSPICE® Model Peak Current Pulse Width Curve Rating Curve 175oC Operating Temperature Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Symbol
Ordering Information
PART NUMBER RFD3055 RFD3055SM RFP3055 PACKAGE TO-251AA TO-252AA TO-220AB BRAND FD3055 FD3055 FP3055
NOTE: When ordering, entire part number. suffix obtain TO-252AA variant tape reel, i.e. RFD3055SM9A.
Packaging
JEDEC TO-251AA JEDEC TO-252AA
SOURCE DRAIN GATE DRAIN (FLANGE)
DRAIN (FLANGE) GATE SOURCE
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
©2002 Fairchild Semiconductor Corporation
RFD3055, RFD3055SM, RFP3055 Rev.
RFD3055, RFD3055SM, RFP3055
Absolute Maximum Ratings
25oC, Unless Otherwise Specified RFD3055, RFD3055SM, RFP3055 Refer Peak Current Curve Refer Curve 0.357 UNITS W/oC
Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20K) (Note VDGR Gate Source Voltage .VGS Continuous Drain Current Pulsed Drain Current (Note Single Pulse Avalanche Rating (Figures Power Dissipation Linear Derating Factor Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 150oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS IGSS rDS(ON) td(ON) td(OFF) tOFF Qg(TOT) Qg(10) Qg(TH) CISS COSS CRSS TO-251 TO-252 TO-220 48V,ID 12A, Ig(REF) 0.24mA (Figure TEST CONDITIONS 250µA, (Figure 250µA (Figure Rated BVDSS 125oC, Rated BVDSS ±20V 12A, (Figure (Note 30V, +10V (Figure 0.150 62.5 UNITS
oC/W oC/W oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction Case Thermal Resistance Junction Ambient
25V, 1MHz (Figure
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage Reverse Recovery Time NOTES: Pulse Test: Pulse Width 300ms, Duty Cycle Repetitive Rating: Pulse Width limited junction temperature. Transient Thermal Impedance Curve (Figure Peak Current Capability Curve (Figure SYMBOL 12A, dISD 100A/µs TEST CONDITIONS UNITS
©2002 Fairchild Semiconductor Corporation
RFD3055, RFD3055SM, RFP3055 Rev.
RFD3055, RFD3055SM, RFP3055 Typical Performance Curves
POWER DISSIPATION MULTIPLIER CASE TEMPERATURE (oC)
Unless Otherwise Specified
DRAIN CURRENT CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
ZJC, NORMALIZED TRANSIENT
THERMAL IMPEDANCE 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 NOTES: DUTY FACTOR: t1/t2 PEAK
RECTANGULAR PULSE DURATION
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
PEAK CURRENT CAPABILITY
25oC
DRAIN CURRENT
TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT CAPABILITY FOLLOWS: -150
100µs
OPERATION THIS AREA LIMITED rDS(ON) 10ms
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION 10-3 10-2 10-1 PULSE WIDTH (ms)
25oC RATED SINGLE PULSE DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE PEAK CURRENT CAPABILITY
©2002 Fairchild Semiconductor Corporation
RFD3055, RFD3055SM, RFP3055 Rev.
RFD3055, RFD3055SM, RFP3055 Typical Performance Curves
AVALANCHE CURRENT
Unless Otherwise Specified (Continued)
DRAIN CURRENT STARTING 25oC
PULSE DURATION 80µs DUTY CYCLE 0.5%
STARTING 150oC
4.5V
(IAS) (1.3 RATED BVDSS VDD) (L/R) [(IAS*R) (1.3 RATED BVDSS VDD) 0.01 tAV, TIME AVALANCHE (ms)
0.001
DRAIN SOURCE VOLTAGE
FIGURE UNCLAMPED INDUCTIVE SWITCHING
FIGURE SATURATION CHARACTERISTICS
STATE DRAIN CURRENT
NORMALIZED DRAIN SOURCE RESISTANCE
PULSE DURATION 80µs DUTY CYCLE 0.5%
-55oC 25oC PULSE DURATION 80µs DUTY CYCLE 0.5% 10V,
175oC
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (oC)
FIGURE TRANSFER CHARACTERISTICS
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
NORMALIZED GATE THRESHOLD VOLTAGE
NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE 250µA 250µA
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE TEMPERATURE
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE TEMPERATURE
©2002 Fairchild Semiconductor Corporation
RFD3055, RFD3055SM, RFP3055 Rev.
RFD3055, RFD3055SM, RFP3055 Typical Performance Curves
DRAIN SOURCE VOLTAGE 1MHz CISS CRSS COSS CISS
Unless Otherwise Specified (Continued)
BVDSS BVDSS VGS, GATE SOURCE VOLTAGE
CAPACITANCE (pF)
0.75 BVDSS 0.75 BVDSS 0.50 BVDSS 0.50 BVDSS 0.25 BVDSS 0.25 BVDSS IG(REF) 0.24mA
COSS CRSS
DRAIN SOURCE VOLTAGE
IG(REF) IG(ACT) TIME (µs) IG(REF) IG(ACT)
NOTE: Refer Fairchild Application Notes AN7254 AN7260. FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RFD3055, RFD3055SM, RFP3055 Rev.
RFD3055, RFD3055SM, RFP3055 Test Circuits Waveforms
(Continued)
Qg(TOT)
Qg(10) Qg(TH) Ig(REF)
Ig(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RFD3055, RFD3055SM, RFP3055 Rev.
RFD3055, RFD3055SM, RFP3055 PSPICE Electrical Model
.SUBCKT RFP3055 0.540e-9 0.540e-9 0.300e-9 DBODY DBDMOD DBREAK DBKMOD DPLCAP DPLCAPMOD EBREAK 67.9 EVTO LDRAIN 1e-9 LGATE 4.61e-9 LSOURCE 4.61e-9
GATE LGATE RGATE
10/26/93
DPLCAP
LDRAIN RSCL1
DRAIN
RSCL2
DBREAK ESCL RDRAIN EBREAK MOS2 DBODY
EVTO
MOS1
RSOURCE
LSOURCE SOURCE
MOS1 MOSMOD M=0.99 MOS2 MOSMOD M=0.01 RBREAK RBKMOD RDRAIN RDSMOD 1e-4 RGATE 7.23 RSCL1 RSLVCMOD 1e-6 RSCL2 RSOURCE RDSMOD 108e-3 RVTO RVTOMOD S1AMOD S1BMOD S2AMOD S2BMOD VBAT
RBREAK RVTO VBAT
ESCL .MODEL DBDMOD (IS=4.33e-14 RS=2.78e-2 TRS1=1.10e-3 TRS2=5.19e-6 CJO=3.94e-10 TT=7.63e-8) .MODEL DBKMOD (RS=0.676 TRS1=1.94e-3 TRS2=-1.09e-6) .MODEL DPLCAPMOD (CJO=0.238e-9 IS=1e-30 N=10) .MODEL MOSMOD NMOS (VTO=4.078 KP=12 IS=1e-30 N=10 TOX=1 L=1u W=1u) .MODEL RBKMOD (TC1=1.06e-3 TC2=-1.92e-6) .MODEL RDSMOD (TC1=5.03e-3 TC2=1.53e-5) .MODEL RSLVCMOD (TC1=2.2e-3 TC2=-5e-6) .MODEL RVTOMOD (TC1=-5.02e-3 TC2=-9.16e-6) .MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-6.5 VOFF=-3.5) .MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-6.5) .MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.50 VOFF=2.50) .MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=2.50 VOFF=-2.50) .ENDS
NOTE: further discussion PSPICE model consult PSPICE Sub-Circuit Power MOSFet Featuring Global Temperature Options; authored William Hepp Frank Wheatley.
©2002 Fairchild Semiconductor Corporation
RFD3055, RFD3055SM, RFP3055 Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER
SMART SuperSOTTM-6 SuperSOTTM-8
VCX
STAR*POWER used under license
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life systems which, intended surgical implant into support device system whose failure perform body, support sustain life, whose reasonably expected cause failure life failure perform when properly used accordance support device system, affect safety with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs These N-Channel enha

Top Searches for this datasheet

Other recent searches