3.5A, 30V, 0.06 Ohm, Logic Level, Dual N-Channel LittleFETPower MOSFET

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3.5A, 30V, 0.06 Ohm, Logic Level, Dual N-Channel LittleFETPower MOSFET

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RF1K49088
3.5A, 30V, 0.06 Ohm, Logic Level, Dual N-Channel LittleFETPower MOSFET
This Dual N-Channel power MOSFET manufactured using advanced MegaFET process. This process, which uses feature sizes approaching those integrated circuits, gives optimum utilization silicon, resulting outstanding performance. designed applications such switching regulators, switching converters, motor drivers, relay drivers, voltage switches. This product achieves full rated conduction gate bias range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49088.
Features
3.5A, rDS(ON) 0.060 Temperature Compensating PSPICE® Model On-Resistance Gate Drive Voltage Curves Peak Current Pulse Width Curve Rating Curve Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Symbol
BRAND RF1K49088
S1(1) G1(2) D1(8) D1(7)
Ordering Information
PART NUMBER RF1K49088 PACKAGE MS-012AA
NOTE: When ordering, entire part number. ordering tape reel, suffix part number, i.e., RF1K4908896.
D2(6) D2(5)
S2(3) G2(4)
Packaging
JEDEC MS-012AA
BRANDING DASH
©2002 Fairchild Semiconductor Corporation
RF1K49088 Rev.
RF1K49088
Absolute Maximum Ratings
25oC Unless Otherwise Specified RF1K49088 Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k, Note VDGR Gate Source Voltage Drain Current Continuous (Pulse Width 5s). Pulsed (Figure Pulsed Avalanche Rating (Figure Power Dissipation 25oC Derate Above 25oC Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case Package Body 10s, Techbrief Tpkg Refer Peak Current Curve Refer Curve 0.016 W/oC
UNITS
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, (Figure VDS, 250µA, (Figure 30V, ±10V 3.5A, (Figures 15V, 3.5A, 4.29, (Figure 25oC 150oC 24V, 3.5A, 6.86 (Figure Pulse width Device mounted FR-4 material ±100 0.060 62.5 UNITS
oC/W
Drain Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction-to-Ambient
IGSS rDS(ON) td(ON) td(OFF) tOFF Qg(TOT) Qg(5) Qg(TH) CISS COSS CRSS
25V, 1MHz (Figure
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage Reverse Recovery Time SYMBOL TEST CONDITIONS 3.5A 3.5A, dISD/dt 100A/µs 1.25 UNITS
©2002 Fairchild Semiconductor Corporation
RF1K49088 Rev.
RF1K49088 Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT AMBIENT TEMPERATURE (oC) AMBIENT TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION AMBIENT TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT AMBIENT TEMPERATURE
ZJA, NORMALIZED THERMAL IMPEDANCE
DUTY CYCLE DESCENDING ORDER 0.05 0.02 0.01
SINGLE PULSE NOTES: DUTY FACTOR: t1/t2 PEAK 10-1 RECTANGULAR PULSE DURATION
0.01 10-3
10-2
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
PEAK CURRENT CAPABILITY
RATED 25oC
TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT FOLLOWS:
DRAIN CURRENT
10ms 100ms
25oC
OPERATION THIS AREA LIMITED rDS(ON) VDSS(MAX)
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION 10-5
0.01
10-4
VDS, DRAIN SOURCE VOLTAGE
10-3 10-2 10-1 PULSE WIDTH
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE PEAK CURRENT CAPABILITY
©2002 Fairchild Semiconductor Corporation
RF1K49088 Rev.
RF1K49088 Typical Performance Curves
(Continued)
4.5V
AVALANCHE CURRENT
STARTING 25oC
DRAIN CURRENT
(L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS VDD)
PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC VDS, DRAIN SOURCE VOLTAGE
STARTING 150oC
tAV, TIME AVALANCHE (ms)
NOTE: Refer Fairchild Application Notes AN9321 AN9322. FIGURE UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE SATURATION CHARACTERISTICS
ID(ON) ON-STATE DRAIN CURRENT
25oC 150oC
rDS(ON) ON-STATE RESISTANCE
PULSE DURATION 80µs DUTY CYCLE 0.5% -55oC
7.0A PULSE DURATION 80µs DUTY CYCLE 0.5%
3.5A 1.75A
0.5A
VGS, GATE SOURCE VOLTAGE
VGS, GATE SOURCE VOLTAGE
FIGURE TRANSFER CHARACTERISTICS
FIGURE DRAIN SOURCE RESISTANCE GATE VOLTAGE DRAIN CURRENT
SWITCHING TIME (ns)
15V, 3.5A, 4.29 NORMALIZED DRAIN SOURCE RESISTANCE tD(OFF)
PULSE DURATION 80µs DUTY CYCLE 0.5% 3.5A
tD(ON)
RGS, GATE SOURCE RESISTANCE
JUNCTION TEMPERATURE (oC)
FIGURE SWITCHING TIME GATE RESISTANCE
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
RF1K49088 Rev.
RF1K49088 Typical Performance Curves
VDS, 250µA NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE
(Continued)
250µA
THRESHOLD VOLTAGE
NORMALIZED GATE
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
1000
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
DRAIN-SOURCE VOLTAGE 5.00 BVDSS 22.5 BVDSS 3.75 GATE-SOURCE VOLTAGE
CISS CAPACITANCE (pF) 1MHz CISS CRSS COSS
COSS
0.75 BVDSS 0.50 BVDSS 0.25 BVDSS 8.57 IG(REF) 0.2mA TIME (µs)
2.50
1.25
CRSS
0.00
VDS, DRAIN SOURCE VOLTAGE
NOTE: Refer Fairchild Application Notes AN7254 AN7260. FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
©2002 Fairchild Semiconductor Corporation
RF1K49088 Rev.
RF1K49088 Test Circuits Waveforms
(Continued)
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
CURRENT REGULATOR
(ISOLATED SUPPLY) Qg(5) Qg(TOT)
BATTERY
0.2µF
0.3µF
SAME TYPE
Qg(TH)
Ig(REF) CURRENT SAMPLING RESISTOR
CURRENT SAMPLING RESISTOR Ig(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORMS
Soldering Precautions
soldering process creates considerable thermal stress semiconductor component. melting temperature solder higher than maximum rated temperature device. amount time device heated high temperature should minimized assure device reliability. Therefore, following precautions should always observed order minimize thermal stress which devices subjected. Always preheat device. delta temperature between preheat soldering should always less than 100oC. Failure preheat device result excessive thermal stress which damage device. maximum temperature gradient should less than second when changing from preheating soldering. peak temperature soldering process should least higher than melting point solder chosen. maximum soldering temperature time must exceed 260oC seconds leads case device. After soldering complete, device should allowed cool naturally least three minutes, forced cooling will increase temperature gradient result latent failure mechanical stress. During cooling, mechanical stress shock should avoided.
©2002 Fairchild Semiconductor Corporation
RF1K49088 Rev.
RF1K49088 PSPICE Electrical Model
SUBCKT RF1K49088 3;rev 7/21/94 1.081e-9 1.138e-9 0.673e-9
DPLCAP MOS2 MOS1 RSOURCE EBREAK DBODY RDRAIN DBREAK LDRAIN
DRAIN
DBODY DBDMOD DBREAK DBKMOD DPLCAP DPLCAPMOD EBREAK 34.1 EVTO
GATE LGATE RGATE
EVTO
LSOURCE SOURCE RVTO
RBREAK
LDRAIN 1e-9 LGATE 1.233e-9 LSOURCE 0.452e-9 MOS1 MOSMOD 0.99 MOS2 MOSMOD 0.01 RBREAK RBKMOD RDRAIN RDSMOD 1.408e-3 RGATE 3.33 RSOURCE RDSMOD 20e-3 RVTO RVTOMOD S1AMOD S1BMOD S2AMOD S2BMOD
VBAT
VBAT 0.211 .MODEL DBDMOD 2.82e-13 1.72e-2 TRS1 1.58e-3 TRS2 1.23e-7 9.19e-10 2.03e-8) .MODEL DBKMOD 2.65e-1 TRS1 5.00e-3 TRS2 7.09e-5) .MODEL DPLCAPMOD (CJO 0.42e-9 1e-30 .MODEL MOSMOD NMOS (VTO 15.0 1e-3 0TOX .MODEL RBKMOD (TC1 1.02e- 3TC2 -1.98e-6) .MODEL RDSMOD (TC1 3.50e-3 3.70e-6) .MODEL RVTOMOD (TC1 -2.53e- 3TC2 8.13e-7) .MODEL S1AMOD VSWITCH (RON 1e-5 ROFF -6.2 VOFF= -3.8) .MODEL S1BMOD VSWITCH (RON 1e-5 ROFF -3.8 VOFF= -6.2) .MODEL S2AMOD VSWITCH (RON 1e-5 ROFF -1.4 VOFF= 4.1) .MODEL S2BMOD VSWITCH (RON 1e-5 ROFF VOFF= -1.4) .ENDS NOTE: further discussion PSPICE model, consult PSPICE Sub-circuit Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991.
©2002 Fairchild Semiconductor Corporation
RF1K49088 Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER
SMART SuperSOTTM-6 SuperSOTTM-8
VCX
STAR*POWER used under license
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life systems which, intended surgical implant into support device system whose failure perform body, support sustain life, whose reasonably expected cause failure life failure perform when properly used accordance support device system, affect safety with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

3.5A, 30V, 0.06 Ohm, Logic Level, Dual N-Channel LittleFETPower MOSFET

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