200V Ultrafast Diodes MUR820 RURP820 ultrafast diodes with soft r

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200V Ultrafast Diodes MUR820 RURP820 ultrafast diodes with soft r

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MUR820, RURP820
200V Ultrafast Diodes
MUR820 RURP820 ultrafast diodes with soft recovery characteristics (trr 25ns). They have forward voltage drop silicon nitride passivated ion-implanted epitaxial planar construction. These devices intended freewheeling/ clamping diodes rectifiers variety switching power supplies other power switching applications. Their stored charge ultrafast soft recovery minimize ringing electrical noise many power switching circuits reducing power loss switching transistors. Formerly developmental type TA09223.
Features
Ultrafast with Soft Recovery <25ns Operating Temperature. .175oC Reverse Voltage .200V Avalanche Energy Rated Planar Construction
Applications
Switching Power Supplies Power Switching Circuits General Purpose
Ordering Information
PART NUMBER MUR820 RURP820 PACKAGE TO-220AC TO-220AC BRAND MUR820 RURP820
Packaging
JEDEC TO-220AC
ANODE CATHODE CATHODE (FLANGE)
NOTE: When ordering, entire part number.
Symbol
Absolute Maximum Ratings 25oC, Unless Otherwise Specified
MUR820 RURP820 Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage .VRWM Blocking Voltage Average Rectified Forward Current IF(AV) 157oC) Repetitive Peak Surge Current IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current IFSM (Halfwave, Phase, 60Hz) Maximum Power Dissipation Avalanche Energy (See Figures .EAVL Operating Storage Temperature .TSTG, UNITS
©2002 Fairchild Semiconductor Corporation
MUR820, RURP820 Rev.
MUR820, RURP820
Electrical Specifications
SYMBOL 150oC 200V 200V, 150oC dIF/dt 200A/µs dIF/dt 200A/µs DEFINITIONS Instantaneous forward voltage 300µs, 2%). Instantaneous reverse current. Reverse recovery time (See Figure summation Time reach peak reverse current (See Figure Time from peak projected zero crossing based straight line from peak through (See Figure Reverse recovery charge. Junction Capacitance. Thermal resistance junction case. Pulse width. Duty cycle. dIF/dt 200A/µs dIF/dt 200A/µs dIF/dt 200A/µs 10V, 25oC, Unless Otherwise Specified TEST CONDITION 0.975 0.895 UNITS
oC/W
Typical Performance Curves
175oC
FORWARD CURRENT
REVERSE CURRENT (µA)
100oC
100oC
175oC
25oC
0.01 25oC
0.001
FORWARD VOLTAGE
REVERSE VOLTAGE
FIGURE FORWARD CURRENT FORWARD VOLTAGE
FIGURE REVERSE CURRENT REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
MUR820, RURP820 Rev.
MUR820, RURP820 Typical Performance Curves
25oC, 200A/µs RECOVERY TIMES (ns) RECOVERY TIMES (ns)
(Continued)
100oC, 200A/µs
FORWARD CURRENT
FORWARD CURRENT
FIGURE CURVES FORWARD CURRENT
FIGURE CURVES FORWARD CURRENT
175oC, 200A/µs RECOVERY TIMES (ns)
IF(AV) AVERAGE FORWARD CURRENT
WAVE
FORWARD CURRENT
CASE TEMPERATURE (oC)
FIGURE CURVES FORWARD CURRENT
FIGURE CURRENT DERATING CURVE
JUNCTION CAPACITANCE (pF) REVERSE VOLTAGE
FIGURE JUNCTION CAPACITANCE REVERSE VOLTAGE
©2002 Fairchild Semiconductor Corporation
MUR820, RURP820 Rev.
MUR820, RURP820 Test Circuits Waveforms
AMPLITUDE CONTROL dIF/dt CONTROL
CURRENT SENSE
IGBT
0.25
FIGURE TEST CIRCUIT
40mH EAVL 1/2LI2 [VR(AVL) /(VR(AVL) VDD)] IGBT (BVCES VR(AVL)) CURRENT SENSE
FIGURE WAVEFORMS DEFINITIONS
VAVL
FIGURE AVALANCHE ENERGY TEST CIRCUIT
FIGURE AVALANCHE CURRENT VOLTAGE WAVEFORMS
©2002 Fairchild Semiconductor Corporation
MUR820, RURP820 Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesDISCLAIMER
FAST
QFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER
SMART SuperSOTTM-6 SuperSOTTM-8
VCX
STAR*POWER used under license
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life systems which, intended surgical implant into support device system whose failure perform body, support sustain life, whose reasonably expected cause failure life failure perform when properly used accordance support device system, affect safety with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.

200V Ultrafast Diodes MUR820 RURP820 ultrafast diodes with soft r

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