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Features Detection efficiency very good. Small temperature coefficient
Top Searches for this datasheet1SS106 SILICON SCHOTTKY BARRIER DIODE VARIOUS DETECTOR High Speed Switching Features Detection efficiency very good. Small temperature coefficient. High reliability with glass seal. Symbol Reverse Voltage Average Rectified Current Junction Temperature Storage Temperature TStg Value +125 Unit Characteristics Tamb 25oC Symbol Forward Current Reverse current Capacitance 1MHz Rectifier efficiency 2Vrms, 40MHz, 20pF ESD-Capability Min. Typ. Max. Unit 200pF,Both forward reverse direction pulse Note: Failure criterion; 140µA SEMTECH ELECTRONICS LTD. (Subsidiary Semtech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724) Dated 31/12/2002 Other recent searchesZADC-20-18-75 - ZADC-20-18-75 ZADC-20-18-75 Datasheet TIA-968-A - TIA-968-A TIA-968-A Datasheet SUM110P04-05 - SUM110P04-05 SUM110P04-05 Datasheet SMT50 - SMT50 SMT50 Datasheet HFTA-14 - HFTA-14 HFTA-14 Datasheet AM6TW-RZ - AM6TW-RZ AM6TW-RZ Datasheet AGR26180E - AGR26180E AGR26180E Datasheet AGR26180EU - AGR26180EU AGR26180EU Datasheet AGR26180EF - AGR26180EF AGR26180EF Datasheet ADC4344 - ADC4344 ADC4344 Datasheet ADC4345 - ADC4345 ADC4345 Datasheet
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