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Features Detection efficiency very good. Small temperature coefficient
Top Searches for this datasheet1SS106 SILICON SCHOTTKY BARRIER DIODE VARIOUS DETECTOR High Speed Switching Features Detection efficiency very good. Small temperature coefficient. High reliability with glass seal. Symbol Reverse Voltage Average Rectified Current Junction Temperature Storage Temperature TStg Value +125 Unit Characteristics Tamb 25oC Symbol Forward Current Reverse current Capacitance 1MHz Rectifier efficiency 2Vrms, 40MHz, 20pF ESD-Capability Min. Typ. Max. Unit 200pF,Both forward reverse direction pulse Note: Failure criterion; IR/140µA SEMTECH ELECTRONICS LTD. (Subsidiary Semtech International Holdings Limited, company listed Hong Kong Stock Exchange, Stock Code: 724) Dated 31/12/2002 Other recent searchesZM-109 - ZM-109 ZM-109 Datasheet V910ME02 - V910ME02 V910ME02 Datasheet TDA523x - TDA523x TDA523x Datasheet tDA523x - tDA523x tDA523x Datasheet PI5C32X384 - PI5C32X384 PI5C32X384 Datasheet 32X384C - 32X384C 32X384C Datasheet AN886 - AN886 AN886 Datasheet
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