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Features Detection efficiency very good. Small temperature coefficient
Top Searches for this datasheet1SS106 SILICON SCHOTTKY BARRIER DIODE VARIOUS DETECTOR High Speed Switching Features Detection efficiency very good. Small temperature coefficient. High reliability with glass seal. Symbol Reverse Voltage Average Rectified Current Junction Temperature Storage Temperature TStg Value +125 Unit Characteristics Tamb 25oC Symbol Forward Current Reverse current Capacitance 1MHz Rectifier efficiency 2Vrms, 40MHz, 20pF ESD-Capability Min. Typ. Max. Unit 200pF,Both forward reverse direction pulse Note: Failure criterion; IR/140µA SEMTECH ELECTRONICS LTD. (Subsidiary Semtech International Holdings Limited, acompany listed Hong Kong Stock Exchange, Stock Code: 724) Dated 31/12/2002 Other recent searchesTK60033AB7 - TK60033AB7 TK60033AB7 Datasheet ST-144 - ST-144 ST-144 Datasheet S20VTA - S20VTA S20VTA Datasheet S1C8R - S1C8R S1C8R Datasheet MBRS340TR - MBRS340TR MBRS340TR Datasheet IN74HC153 - IN74HC153 IN74HC153 Datasheet HRF-SW1000 - HRF-SW1000 HRF-SW1000 Datasheet CER0514A - CER0514A CER0514A Datasheet
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