Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) 0.0
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Si4941EDY
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
rDS(on) 0.021 0.031
FEATURES
(Typ)
TrenchFET® Power MOSFET Protection: 2500
APPLICATIONS
Load Switch Portable Devices Battery Load Switching Notebooks
RoHS
COMPLIANT
SO-8
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Ordering Information: Si4941EDY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction Storage Temperature Range Symbol Limit 8.3b, 6.6b, 1.7b, 1.3b, Unit
Tstg
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, Maximum Junction-to-Foot (Drain) Steady State Symbol RthJA RthJF Typical Maximum 62.5 Unit °C/W
Notes: Package limited. Surface Mounted board. sec. Maximum under Steady State conditions °C/W
Document Number: 74248 S-61191-Rev. 03-Jul-06
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Si4941EDY
SPECIFICATIONS unless otherwise noted
Parameter Static Drain-Source Breakdown Voltage Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage 0.83 td(on) td(off) td(on) td(off) VGEN VGEN VGS(th) VGS(th) IGSS IDSS ID(on) rDS(on) 0.017 0.025 0.021 0.031 mV/°C Symbol Test Conditions Unit
Notes: Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Stresses beyond those listed under "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only, functional operation device these other conditions beyond those indicated operational sections specifications implied. Exposure absolute maximum rating conditions extended periods affect device reliability.
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Document Number: 74248 S-61191-Rev. 03-Jul-06
Si4941EDY
TYPICAL CHARACTERISTICS
thru Drain Current Drain Current
unless noted
Drain-to-Source Voltage
Gate-to-Source Voltage
Output Characteristics
0.040 Gate-to-Source Voltage 0.035 DS(on) On-Resistance 0.030 0.025 0.020 0.015 0.010 0.005 0.000
Transfer Characteristics
Drain Current
Total Gate Charge (nC)
On-Resistance Drain Current
DS(on) On-Resistance (Normalized) Source Current
Gate Charge
Junction Temperature (°C)
Source-to-Drain Voltage
On-Resistance Junction Temperature
Source-Drain Diode Forward Voltage
Document Number: 74248 S-61191-Rev. 03-Jul-06
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Si4941EDY
TYPICAL CHARACTERISTICS unless noted
rDS(on) Drain-to-Source On-Resistance 0.12 0.10
VGS(th)
0.08
0.06
0.04
0.02
0.00
Gate-to-Source Voltage
Temperature (°C)
On-Resistance Gate-Source Voltage
Threshold Variance
*Limited rDS(on) Drain Current Power P(t) P(t) P(t) Single Pulse *VGS P(t) P(t) BVDSS Limited
Time (sec)
0.01
Single Pulse Power
Drain-to-Source Voltage minimum which rDS(on) specified
Safe Operating Area
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Document Number: 74248 S-61191-Rev. 03-Jul-06
Si4941EDY
TYPICAL CHARACTERISTICS unless noted
PACKAGE LIMITED Power Dissipation Drain Current
Case Temperature (°C)
Case Temperature (°C)
Current Derating*
Power Derating
power dissipation based TJ(max) using junction-to-case thermal resistance, more useful settling upper dissipation limit cases where additional heatsinking used. used determine current rating, when this rating falls below package limit.
Document Number: 74248 S-61191-Rev. 03-Jul-06
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Si4941EDY
TYPICAL CHARACTERISTICS unless noted
Normalized Effective Transient Thermal Impedance Duty Cycle
Notes:
0.05
0.02
Duty Cycle,
Unit Base RthJA °C/W
Single Pulse 0.01 Square Wave Pulse Duration (sec)
PDMZthJA(t) Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient Thermal Impedance Duty Cycle
0.05 0.02
Single Pulse 0.01 Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products manufactured several qualified locations. Reliability data Silicon Technology Package Reliability represent composite qualified locations. related documents such package/tape drawings, part marking, reliability data,
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Document Number: 74248 S-61191-Rev. 03-Jul-06
Legal Disclaimer Notice
Vishay
Notice
Specifications products displayed herein subject change without notice. Vishay Intertechnology, Inc., anyone behalf, assumes responsibility liability errors inaccuracies. Information contained herein intended provide product description only. license, express implied, estoppel otherwise, intellectual property rights granted this document. Except provided Vishay's terms conditions sale such products, Vishay assumes liability whatsoever, disclaims express implied warranty, relating sale and/or Vishay products including liability warranties relating fitness particular purpose, merchantability, infringement patent, copyright, other intellectual property right. products shown herein designed medical, life-saving, life-sustaining applications. Customers using selling these products such applications their risk agree fully indemnify Vishay damages resulting from such improper sale.
Document Number: 91000 Revision: 08-Apr-05
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