Part Number: VG1B-1000 LuxNet's oxide VCSEL structure produced us
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Oxide VCSEL Epiwafer
Part Number: VG1B-1000
LuxNet's oxide VCSEL structure produced using state-of- the-art MOCVD reactor. achieved excellent uniformity reproducibility. wavelength reproducibility within 5nm. Thickness uniformity within wafer with edge exclusion Characterization
VCSEL device Results
25'C
Features:
90'C
100'C
50'C
75'C
Light Output (mW)
Excellent uniformity GaAs triple quantum wells dopant (100) degrees substrate Proven reliability data Custom structures available features
Forward Current
Part Number: VG1B-1000
Specifications:
Center Wavelength
840~860
Uniformity ±5.0nm exclusion wafer) Uniformity ±5.0nm exclusion wafer) Uniformity ±2.0nm exclusion wafer) GaAs/ AlGaAs triple AlxGa1-xAs x=0.97 High Index AlxGa1-xAs x=0.15~0.2 Index AlxGa1-xAs x=0.9~0.99
Wavelength
840~860
Wavelength Active layer Oxide layer
827~833
Doping Level 1.Cap layer 2.P-DBR 3.N-DBR Defect density
>1x1019 cm-3 x1018 cm-3 x1018 cm-3 300cm
Specification ±30% n-type p-type
Smooth surface
Device Performance (for oxide size)
Parameter Threshold Current Threshold Voltage Forward Voltage Differential Resistance Reverse Voltage Slope Efficiency Symbol Unit Min. Typ. Max. Test Condition
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