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ADE-208-153 Z

1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

ADE-208-153 (Z)
1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
Preliminary Rev. 0 Oct 1993 Features
· Detection efficiency is very good. · Small temperature coefficient. · High reliability with glass seal.
Outline
2 2nd band Cathode band
Ordering Information
Type No. Cathode 2nd band Mark Package Code 1SS106 White White H DO-35
1. Cathode 2. Anode
Item Reverse voltage Average forward current Junction temperature Storage temperature Symbol VR Io Tj Tstg Value 10 30 125 -55 to +125 Unit V mA °C °C
Both forward and reverse direction 1 pulse.
1SS106
Forward current I F (A)
Reverse current I R (A) 0 0.8 1.2 1.6 0.4 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 2.0
4 8 6 Reverse voltage VR (V)
Fig.2 Reverse current Vs. Reverse voltage
10 Capacitance C (pF)
0 1.0 Reverse voltage VR (V) 10 0 0.5 1.0 1.5 2.0 2.5 3.0 Input voltage Vin (Vrms) Fig.4 Rectifier efficiency Vs. Input voltage
Fig.3 Capacitance Vs. Reverse voltage
1SS106
Package Dimensions
Unit: mm
26.0 Min
4.2 Max
26.0 Min 2.0 Max
2 2nd band (White) Cathode band (White) 1 Cathode 2 Anode
HITACHI Code JEDEC Code EIAJ Code Weight (g)
DO-35 DO-35 SC-48 0.13