1SS106 Silicon Schottky Barrier Diode Various Detector,High Speed Swit
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ADE-208-153
1SS106 Silicon Schottky Barrier Diode Various Detector,High Speed Switching
Preliminary Rev. 1993 Features
Detection efficiency very good. Small temperature coefficient. High reliability with glass seal.
Outline
band Cathode band
Ordering Information
Type Cathode band Mark Package Code 1SS106 White White DO-35
Cathode Anode
Absolute Maximum Ratings 25°C)
Item Reverse voltage Average forward current Junction temperature Storage temperature Symbol Tstg Value +125 Unit
Electrical Characteristics 25°C)
Item Forward current Reverse current Capacitance Rectifier efficiency ESD-Capability Symbol Unit Test Condition Vin=2Vrms,f=40MHz,RL=5k CL=20pF *C=200pF
Both forward reverse direction pulse.
Failure criterion 140µA
1SS106
Forward current
Reverse current Forward voltage Fig.1 Forward current Forward voltage
Reverse voltage
Fig.2 Reverse current Reverse voltage
f=1MHz
Rectifier efficiency 10-1
Capacitance (pF)
Reverse voltage Input voltage (Vrms) Fig.4 Rectifier efficiency Input voltage
Fig.3 Capacitance Reverse voltage
1SS106
Package Dimensions
Unit:
26.0
26.0
band (White) Cathode band (White) Cathode Anode
HITACHI Code JEDEC Code EIAJ Code Weight
DO-35 DO-35 SC-48 0.13
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