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HIGH DENSITY MOUNTING INPUT, PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATO


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IS126
HIGH DENSITY MOUNTING INPUT, PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS
DESCRIPTION IS126 optically coupled isolator consisting infrared light emitting diodes connected inverse parallel silicon photo transistor space efficient dual line plastic package. FEATURES
Dimensions
Marked FPA1.
Current Transfer Ratio MIN. Isolation Voltage (3.75kVRMS ,5.3kVPK electrical parameters 100% tested Drop replacement Toshiba TLP126
APPLICATIONS Computer terminals Industrial systems controllers Measuring instruments Signal transmission between systems different potentials impedances
ISOCOM COMPONENTS Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 Tel: (01429) 863609 :(01429) 863581
22/4/02
ISOCOM 1024 Greenville Ave, Suite 240, Allen, 75002 Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com
DB92855l-AAS/A3
ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -40°C 125°C Operating Temperature -30°C 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation ±50mA 70mW
OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION Total Power Dissipation
(derate linearly 2.26mW/°C above 25°C)
150mW
170mW
ELECTRICAL CHARACTERISTICS 25°C Unless otherwise noted PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) Collector-emitter Breakdown (BVCEO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Coupled Current Transfer Ratio (CTR) UNITS TEST CONDITION ±20mA 10µA 0.1mA 10µA ±1mA ±20mA note note 500V (note 2mA,
Output
Collector-emitter Saturation VoltageVCE (SAT) Input Output Isolation Voltage VISO 3750 5300
VRMS
Input-output Isolation Resistance RISO 5x1010 Output Rise Time Output Fall Time
Note
Measured with input leads shorted together output leads shorted together.
22/4/02
DB92855l-AAS/A3
TAPING DIMENSIONS
Description Tape wide Pitch sprocket holes Distance compartment Distance compartment compartment
Symbol
Dimensions inches .217 .079 .315
12/07/01
Appendix Mini Flat Pack FPA-AAS/A1
CHARACTERISTIC CURVES
Fig.1 Forward Current Ambient Temperature
Fig.2 Collector Power Dissipation Ambient Temperature
Collector power dissipation (mW)
(mA)
Forward current
Ambient temperature
Ambient temperature
Fig.3 Collector-emitter Saturation Voltage Forward Current
0.5mA
Fig.4 Forward Current Forward Voltage
Collector-emitter saturation voltage (sat)
(mA)
10.0 12.5 15.0 Forward current (mA)
Forward current
Forward voltage
Fig.5 Current Transfer Ratio Forward Current
VCE=
Fig.6 Collector Current Collector-emitter Voltage
Current transfer ratio
Collector current (mA)
30mA Pc(MAX.) 20mA 10mA
Forward current (mA)
Collecotr-emitter voltage
12/07/01
Appendix Mini Flat Pack FPA-AAS/A1
CHARACTERISTIC CURVES
Fig.7 Relative Current Transfer Ratio Ambient Temperature
Fig.8 Collector-emitter Saturation Voltage Ambient Temperature
0.10
Collector-emitter saturation voltage VCE(sat)
1mA,
Relative current transfer ratio
20mA
0.08
0.06
0.04
0.02
Ambient temperature
Ambient temperature
Fig.9 Collector Dark Current Ambient Temperature
10000
Fig.10 Response Time Load Resistance
(nA)
VCE=
Response time
1000
Collector Dark Current
Ambient Temperature
Load resistance
Fig.11 Frequency Response
Test Circuit Response Time
Input Input Output Output
Voltage gain (dB)
Test Circuit Frequency Response
1000 Frequency (kHz)
Output
12/07/01
Appendix Mini Flat Pack FPA-AAS/A1
TEMPERATURE PROFILE SOLDERING REFLOW
time soldering reflow recommended within condition temperature time profile shown below.
seconds
minute
minutes minutes minute
When using another soldering method such infrated lamp, temperature rise partially mold device. Keep temperature package device within condition above (1).
12/07/01
Appendix Mini Flat Pack FPA-AAS/A1

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