QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPADTM) BENEFI
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ALD1108E/ALD1110E
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPADTM)
BENEFITS
Operates from Flexible basic circuit building block design element Very high resolution average programmable voltage
resolution 0.1mV
Simple, elegant single-chip solution
trimming voltage/current values
Direct in-circuit active element operation
programming
Wide dynamic range current levels from 0.1µA
3000µA
Remotely electrically trim parameters
circuits that physically inaccessible
Voltage adjustment range from 1.000V 3.000V
0.1mV steps Proven, non-volatile CMOS technology Typical years drift less than Usable voltage mode current mode High input impedance 1012 Very high current gain greater than Device operating current positive temperature coefficient range negative temperature coefficient range with cross-over zero temperature coefficient current level 68µA Tight matching tracking on-resistance between different devices with programming Very input currents leakage currents cost, monolithic technology Application-specific in-system programming modes User programmable software-controlled automation User programmability standard/custom configuration Micropower operation Available standard PDIP, SOIC hermetic CDIP packages Suitable matched-pair balanced circuit configuration Suitable both coarse fine trimming applications
Usable environmentally sealed circuits system overhead active circuitry required mechanical moving parts high G-shock
tolerance
Improved reliability, dependability, dust
moisture resistance
Cost labor savings Small footprint high board density
applications
Fully automated test trimming environment
CONFIGURATION
ALD1108E VDN4
EPAD EPAD EPAD EPAD
ORDERING INFORMATION
Operating Temperature Range* -55°C +125°C +70°C +70°C 16-Pin CERDIP Package ALD1108E 16-Pin Plastic Package ALD1108E 16-Pin SOIC Package ALD1108E
PACKAGE
CONFIGURATION
ALD1110E EPAD
EPAD
Operating Temperature Range* -55°C +125°C +70°C +70°C 8-Pin CERDIP Package ALD1110E 8-Pin Plastic Package ALD1110E 8-Pin SOIC Package ALD1110E
S12,
PACKAGE
Contact factory industrial temperature range
1998 Advanced Linear Devices, Inc. Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
APPLICATIONS
GENERAL DESCRIPTION ALD1108E/ALD1110E monolithic quad/dual EPADs (Electrically Programmable Analog Device) that utilize CMOS MOSFET with electrically programmable threshold voltage. given input voltage, changing threshold turn-on voltage MOSFET device precisely changes drain on-current, resulting on-resistance characteristic that precisely controlled. Used in-circuit element trimming setting combination voltage and/or current characteristics, programmed Personal Computer remotely automatically software control. Once programmed set, voltage current levels stored indefinitely inside device precisely controlled nonvolatile stored charge, which affected during normal operation device, even after power been turned off. ALD1108E/ALD1110E devices built with ALD's EPAD technology, electrically programmable device technology refined analog applications. ALD1108E/ALD1110E functions like regular MOSFET transistor except with precise user preset threshold voltage. Using ALD1108E/ALD1110E simple straight forward. device extremely versatile circuit element design component. presents user with wealth possible applications, limited only imagination user many ways analog MOSFET device used circuit design element. ALD1108E/ ALD1110E need other active circuitry functionality. basic device monotonically adjustable device which means device normally programmed increase threshold voltage decrease drain-on current function given input bias voltage. Once adjusted, voltage current conditions permanent reversible. However, given EPAD device adjusted many times continually increase threshold voltage. pair EPAD devices also connected such that device used adjust parameter direction other device used adjust same parameter other direction. ALD1108E/ALD1110E pre-programmed with EPAD programmer obtain desired voltage current levels. they programmed active in-system element user system, user designed interface circuitry. more information, Application Note AN1108.
Precision PC-based electronic calibration Automated voltage trimming setting Remote voltage current adjustment
inaccessible nodes
PCMCIA based instrumentation trimming Electrically adjusted resistive load Temperature compensated current sources
current mirrors
Electrically trimmed/calibrated current
sources
Permanent precision preset voltage level
shifter
temperature coefficient voltage and/or
current bias circuits
Multiple preset voltage bias circuits Multiple channel resistor pull-up pull-down
circuits Microprocessor based process control systems Portable data acquisition systems Battery operated terminals instruments Remote telemetry systems Programmable gain amplifiers level signal conditioning Sensor transducer bias currents Neural networks
BLOCK DIAGRAM
ALD1110E
V+(5)
GN1(2)
EPAD
EPAD
BLOCK DIAGRAM
ALD1108E
V+(13) (14) (16) (11)
GN1(2)
ALD1108E/ALD1110E
Advanced Linear Devices
EPAD
(15) GN3(10)
EPAD
EPAD
EPAD
(12)
ABSOLUTE MAXIMUM RATINGS
Supply voltage, referenced VSupply voltage, referenced VDifferential input voltage range Power dissipation Operating temperature range package package Storage temperature range Lead temperature, seconds -0.3V +13.2V ±6.6V 0.3V +0.3V +70°C -55°C +125°C -65°C +150°C +260°C
OPERATING ELECTRICAL CHARACTERISTICS 25°C +5.0V unless otherwise specified
ALD1108E Parameter Supply Voltage Initial Threshold Voltage Programmable Range Drain Gate Connected Voltage Tempco Symbol TCVDS 0.990 1.000 -1.6 -0.3 +2.7 Initial Offset Voltage Tempco Differential Threshold Voltage Tempco Differential Threshold Voltage Long Term Drift Long Term Drift Match Drain Source Current TCVOS 2.000 2.000 µV/°C VDS1 VDS2 1.000 10.0 1.010 3.000 0.990 1.000 -1.6 -0.3 +2.7 1.000 ALD1110E 10.0 1.010 3.000 Unit mV/°C mV/°C mV/°C mV/°C 50µA 68µA 500µA 21°C Test Conditions
TCDV IDS(ON)
0.033 -0.02 -0.05
0.033 -0.02 -0.05
mV/°C 1000 Hours 1000 Hours 1.000V
Drain Source Current
IDS(ON)
Initial Zero Tempco Voltage Zero Tempco Current Initial On-Resistance On-Resistance Match
VZTCi IZTC
1.52
1.52
0.1V
ALD1108E/ALD1110E
Advanced Linear Devices
OPERATING ELECTRICAL CHARACTERISTICS (cont'd) 25°C +5.0V unless otherwise specified
ALD1108E Parameter Transconductance Transconductance Match Level Output Conductance High Level Output Conductance Drain Leakage Current Symbol ALD1110E Unit mA/V µA/V Test Conditions 10V,VG 10V,VG
µA/V
+0.5V
ID(OFF)
µA/V Hours
+4.0V
125°C
Gate Leakage Current
IGSS
125°C
Input Capacitance Cross Talk Relaxation Time Constant Relaxation Voltage
CISS
-0.3
100KHz
tRLX VRLX
-0.3
1.0V 3.0V
PROGRAMMING CHARACTERISTICS 25°C +5.0V unless otherwise specified
Parameter Programmable Range Resolution Programming Change Programming Pulse 0.05 0.05 pulse 1.0V 2.5V Symbol 1.000 ALD1108E 3.000 ALD1110E 3.000 Unit Test Conditions
1.000
Programming Voltage Programming Current Pulse Frequency
pulse
11.75
12.00
12.25
11.75
12.00
12.25
ALD1108E/ALD1110E
Advanced Linear Devices
TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
OUTPUT CHARACTERISTICS
+1.0
DRAIN SOURCE CURRENT (mA)
+25°C
DRAIN SOURCE CURRENT (mA)
+12V +10V
+25°C
+12V +10V
-1.0 -200 -160 -120 +200
DRAIN SOURCE VOLTAGE
DRAIN SOURCE VOLTAGE (mV)
DRAIN SOURCE CURRENT AMBIENT TEMPERATURE
DRAIN SOURCE CURRENT (mA)
3.0V 1.0V 1.5V 2.0V 2.5V
DRAIN SOURCE CURRENT THRESHOLD VOLTAGE
+25°C +5.0V
DRAIN SOURCE CURRENT (mA)
AMBIENT TEMPERATURE (°C)
THRESHOLD VOLTAGE
TRANSCONDUCTANCE THRESHOLD VOLTAGE
+25°C
HIGH LEVEL OUTPUT CONDUCTANCE vs.THRESHOLD VOLTAGE
HIGH LEVEL OUTPUT CONDUCTANCE (µA/V)
TRANSCONDUCTANCE mA/V)
+25°C
4.0V
4.0V 5.0V
THRESHOLD VOLTAGE
THRESHOLD VOLTAGE
ALD1108E/ALD1110E
Advanced Linear Devices
TYPICAL PERFORMANCE CHARACTERISTICS
THRESHOLD VOLTAGE AMBIENT TEMPERATURE
1.0µA 3.0V 2.5V 2.0V 1.5V 1.0V
LEVEL OUTPUT CONDUCTANCE AMBIENT TEMPERATURE
0.5V 5.0V
THRESHOLD VOTAGE
LEVEL OUTPUT CONDUCTANCE(µA/V)
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
DRAIN LEAKAGE CURRENT (pA)
TRANSCONDUCTANCE AMBIENT TEMPERATURE
TRANSCONDUCTANCE (mA/V)
DRAIN LEAKAGE CURRENT AMBIENT TEMPERATURE
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
HIGH LEVEL OUTPUT CONDUCTANCE AMBIENT TEMPERATURE
LEVEL CURRENT OUTPUT CONDUCTANCE (µA/V)
LEVEL OUTPUT CONDUCTANCE THRESHOLD VOLTAGE
+25°C
HIGH LEVEL OUTPUT CONDUCTANCE (mA/V)
4.0V 5.0V
0.5V 5.0V
AMBIENT TEMPERATURE (°C)
THRESHOLD VOTAGE
ALD1108E/ALD1110E
Advanced Linear Devices
TYPICAL PERFORMANCE CHARACTERISTICS
DRAIN SOURCE CURRENT, BIAS CURRENT AMBIENT TEMPERATURE
DRAIN SOURCE CURRENT (mA)
DRAIN SOURCE CURRENT, BIAS CURRENT AMBIENT TEMPERATURE
DRAIN SOURCE CURRENT
Zero Temperature Coefficient (ZTC) 125°C
-55°C -25°C
125°C
125°C
1.0V
25°C
1.2V 25°C
1.4V 25°C
70°C
125°C
GATE DRAIN SOURCE VOLTAGE (VGS VDS)
GATE DRAIN SOURCE VOLTAGE (VGS VDS)
CHANGE DIFFERENTIAL THRESHOLD VOLTAGE AMBIENT TEMPERATURE
DRAIN SOURCE CURRENT, BIAS CURRENT (µA)
CHANGE DIFFERENTIAL THRESHOLDVOLTAGE (mV)
10000
REPRESENTATIVE UNITS
DRAIN SOURCE CURRENT, BIAS CURRENT RESISTANCE
IDS(ON) +0.9V +5.0V 5.0V IDS(ON) 0.5V
1000
1000
10000
AMBIENT TEMPERATURE (°C)
RESISTANCE
GATE SOURCE VOLTAGE DRAIN SOURCE CURRENT
DRAIN SOURCE CURRENT OUTPUT VOLTAGE
DRAIN SOURCE CURRENT (mA)
GATE SOURCE VOLTAGE
IDS(ON)
0.5V +125°C
1.000V -55°C
0.5V +25°C
+50°C +125°C
+25°C IDS(ON) +125°C
1000
10000
DRAIN SOURCE CURRENT (µA)
OUTPUT VOLTAGE
ALD1108E/ALD1110E
Advanced Linear Devices
TYPICAL PERFORMANCE CHARACTERISTICS
OFFSET VOLTAGE AMBIENT TEMPERATURE
REPRESENTATIVE UNITS
GATE LEAKAGE CURRENT (pA)
GATE LEAKAGE CURRENT AMBIENT TEMPERATURE
IGSS
OFFSET VOLTAGE (mV)
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
GATE SOURCE VOLTAGE RESISTANCE
GATE SOURCE VOLTAGE
+125°C +25°C IDS(ON)
DRAIN GATE DIODE CONNECTED VOLTAGE TEMPCO DRAIN SOURCE CURRENT
DRAIN- GATE DIODE CONNECTED VOLTAGE TEMPCO (mV/
-55°C +125°C
0.0V 5.0V
-2.5
1000 10000
1000
RESISTANCE
DRAIN SOURCE CURRENT (µA)
ALD1108E/ALD1110E
Advanced Linear Devices
DEFINITION TERMS Bias Voltage BIAS) Bias Voltage EPAD voltage across Gate Source terminals with Gate Drain connected specified Drain Source Current, IDS. When 1µA, Bias Voltage identical Threshold Voltage. Input Bias Voltage EPAD voltage across Gate Source terminals, VGS. Output Bias Voltage EPAD voltage across Drain Source terminals specified Drain Source Current, Change Threshold Voltage Programming Pulse (Vt/ This voltage change Threshold Voltage while EPAD being programmed with electrical voltage pulse. This voltage change very small varies exponential function Typical initial values range from mV/step 1.0mV/step when Volt decreases 10µV/step lower higher values. Delta Threshold Voltage (Vt) Delta Threshold Voltage change threshold voltage same EPAD device after programming. Differential Threshold Voltage (DVt) Differential Threshold Voltage difference between EPAD devices, each electrically programmed different value. This also fixed relative voltage that tracks with temperature, with tempco value volt relative between EPADs. EPADElectrically Programmable Analog Device Integrated Circuit that utilizes CMOS with electrically programmable Threshold Voltage. Once programmed, Threshold Voltage retained indefinitely, even when power off. Initial Threshold Voltage initial device before being electrically programmed value. Initial Zero Tempco Voltage (VZTCi) Initial Drain Voltage which Temperature Coefficient Drain-Gate connected Voltage, relative Source Voltage, zero, when initial 1.000 volt. Long Term Drift Long Term Drift nominal change threshold voltage EPAD time period 1,000 hours. Long Term Drift Match Long Term Drift Match nominal match long term drift between EPADs, time period 1,000 hours. Monotonic Adjustment Adjustment changed direction only. Offset Voltage (VOS) Offset Voltage small difference between EPAD devices when devices have same initial electrically programmed values. Programming Voltage (Vp) voltage which programming threshold voltage EPAD occurs. This voltage, control timing this voltage impedance voltage source critical EPAD programmed subsequent device performance. user advised EPAD programmer which been specifically designed developed this task. Relaxation Time Constant (tRLX) Relaxation Time Constant time constant associated with Relaxation Voltage drop after EPAD been programmed.
ALD1108E/ALD1110E Advanced Linear Devices
Relaxation Voltage (VRLX After programming, EPAD threshold voltage will relax small amount, which corresponds small loss interface charge. This small, fixed voltage step decreases Relaxation Time Constant. Relaxation Voltage voltage change (voltage drop) after three Relaxation Time Constants. compensate this, initial relaxation voltage, expressed percentage programmed added initial desired target voltage. Tempco Differential Threshold Voltage (TCDVt Temperature Coefficient Differential Threshold Voltage change difference between EPAD threshold voltages degree change temperature when devices initially have relative electrically programmed difference. Tempco Threshold Voltage (TCVt Temperature Coefficient change Threshold Voltage degree change temperature. Threshold Voltage Threshold Voltage EPAD voltage across Gate Source when forced into Drain terminal Drain Gate connected together. Tempco (TCVOS) Temperature Coefficient Offset Voltage change difference between EPAD threshold voltages degree Centigrade change temperature when devices have same initial electrically programmed values. Zero Tempco Current Drain current EPAD device which Temperature Coefficient Drain-Gate Connected Voltage, relative Source Voltage, zero.
ALD1108E/ALD1110E
Advanced Linear Devices
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