MECHANICAL DATA Dimensions (inches) 13.59 (0.535) 13.84 (0.545) 3
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2N7228
MECHANICAL DATA Dimensions (inches)
13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050)
N-CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
HERMETICALLY SEALED ISOLATED PACKAGE AVALANCHE ENERGY RATING
30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)
0.89 (0.035) 1.14 (0.045) 3.81 (0.150)
20.07 (0.790) 20.32 (0.800)
500V 0.415
3.81 (0.150)
SIMPLE DRIVE REQUIREMENTS ALSO AVAILABLE SURFACE MOUNT PACKAGE EASE PARALLELING
TO-254AA Metal Package
Drain Source Gate
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C unless otherwise stated)
dv/dt Tstg Gate Source Voltage Continuous Drain Current (VGS Tcase 25°C) Continuous Drain Current (VGS Tcase 100°C) Pulsed Drain Current Power Dissipation Tcase 25°C Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery Operating Storage Temperature Range Lead Temperature measured 1/16" (1.6mm) from case sec. Thermal Resistance Junction Case Thermal Resistance Case Sink (Typical) Thermal Resistance Junction Ambient ±20V 150W 1.2W/°C 750mJ 15mJ 3.5V/ns 150°C 300°C 0.83°C/W 0.21°C/W 48°C/W
Notes Repetitive Rating Pulse width limited Maximum Junction Temperature 9.4mH Peak Starting 25°C di/dt 130A/µs BVDSS 150°C Suggested 2.35
Semelab plc.
Telephone +44(0)1455 556565. +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk
4/99
2N7228
ELECTRICAL CHARACTERISTICS (Tamb 25°C unless otherwise stated)
Parameter
BVDSS RDS(on) STATIC ELECTRICAL RATINGS Drain Source Breakdown Voltage Breakdown Voltage Static Drain Source On-State Resistance
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS Temperature Coefficient
Reference 25°C 250µA 0.8BVDSS 125°C -20V
0.68 0.415 0.515 -100 2700
4/99
VGS(th) Gate Threshold Voltage IDSS IGSS IGSS Ciss Coss Crss td(on) td(off) Forward Transconductance
Zero Gate Voltage Drain Current Forward Gate Source Leakage Reverse Gate Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain Case Capacitance Total Gate Charge Gate Source Charge Gate Drain ("Miller") Charge Turn- Delay Time Rise Time Turn-Off Delay Time Fall Time
1MHz 0.5BVDSS 250V 2.35
SOURCE DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
25°C 25°C Negligible
1600
100A/µs
PACKAGE CHARACTERISTICS Internal Drain Inductance Measured from down drain lead centre
Internal Source Inductance Measured from down source lead source bond Notes Repetitive Rating Pulse width limited Maximum Pulse Test: Pulse Width 300µs, Junction Temperature Current limited diameter.
Semelab plc.
Telephone +44(0)1455 556565. +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk
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