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DPAK Surface Mount Applications This device designed high-voltage


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High Voltage SWITCHMODET Series
DPAK Surface Mount Applications
This device designed high-voltage, high-speed power switching inductive circuits where fall time critical. particularly suited SWITCHMODE applications such switching regulators, inverters, motor controls, solenoid/relay drivers deflection circuits.
MJD13003
SILICON POWER TRANSISTOR AMPERES VOLTS WATTS
Lead Formed Surface Mount Applications Plastic Sleeves
Suffix) Straight Lead Version Plastic Sleeves ("-1" Suffix) Lead Formed Version Tape Reel ("T4" Suffix) Reverse Biased with Inductive Loads 100_C Inductive Switching Matrix Amp, 100_C 100_C (Typ) Blocking Capability Switching Applications Information Electrically Similar Popular MJE13003
CASE 369A-13
MAXIMUM RATINGS
Rating Symbol Value Unit Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage VCEO(sus) VCEV VEBO Collector Current Continuous Peak Base Current Continuous Peak 0.75 2.25 Emitter Current Continuous Peak Total Power Dissipation 25_C Derate above 25_C Total Power Dissipation 25_C Derate above 25_C Operating Storage Junction Temperature Range 1.56 0.0125 0.12 Watts W/_C Watts W/_C Tstg +150
CASE 369-07
MINIMUM SIZES RECOMMENDED SURFACE MOUNTED APPLICATIONS
0.190 4.826
Characteristic
Symbol
Unit
Thermal Resistance, Junction Case
8.33
_C/W _C/W
Thermal Resistance, Junction Ambient Maximum Lead Temperature Soldering Purposes
Pulse Test: Pulse Width Duty Cycle 10%. When surface mounted minimum sizes recommended.
SWITCHMODE trademarks Semiconductor, Inc.
Semiconductor Components Industries, LLC, 2001
January, 2001 Rev.
0.243 6.172
THERMAL CHARACTERISTICS
0.063 inches
PublicMJD13003/D
0.118
0.07
0.165 4.191
Pulse Test: Pulse Width Duty Cycle SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS CHARACTERISTICS SECOND BREAKDOWN CHARACTERISTICS
ELECTRICAL CHARACTERISTICS 25_C unless otherwise noted)
Fall Time
Crossover Time
Storage Time
Inductive Load, Clamped (Table Figure
Fall Time
Storage Time
Rise Time
Delay Time
Resistive Load (Table
Output Capacitance (VCB Vdc, MHz)
Current-Gain Bandwidth Product mAdc, Vdc, MHz)
Base-Emitter Saturation Voltage Adc, Adc) Adc, 0.25 Adc) Adc, 0.25 Adc, 100_C)
Collector-Emitter Saturation Voltage Adc, Adc) Adc, 0.25 Adc) Adc, Adc) Adc, 0.25 Adc, 100_C)
Current Gain Adc, Vdc) Adc, Vdc)
Clamped Inductive with Base Reverse Biased
Second Breakdown Collector Current with Base Forward Biased
Emitter Cutoff Current (VEB Vdc,
Collector Cutoff Current (VCEV Rated Value, VBE(off) Vdc) (VCEV Rated Value, VBE(off) Vdc, 100_C)
Collector-Emitter Sustaining Voltage
Characteristic
Vclamp Vdc, VBE(off) Vdc, 100_C
Vdc, Duty Cycle
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MJD13003
VCEO(sus) Symbol RBSOA VCE(sat) VBE(sat) IEBO ICEV IS/b Figure Figure 0.15 0.29 0.05 0.75 mAdc mAdc Unit
MJD13003
COLLECTOR-EMITTER VOLTAGE (VOLTS) CURRENT GAIN -55°C 0.02 0.03 150°C 25°C 25°C 0.002
0.05 0.07 COLLECTOR CURRENT (AMP)
0.005 0.01 0.02 0.05 BASE CURRENT (AMP)
Figure Current Gain
Figure Collector Saturation Region
VOLTAGE (VOLTS) 0.02 0.03 VBE(sat) IC/IB VBE(on) VOLTAGE (VOLTS)
0.35 0.25 0.15 0.05 0.02 0.03 0.05 0.07 150°C 25°C IC/IB -55°C
-55°C 25°C 25°C 150°C 0.05 0.07
COLLECTOR CURRENT (AMP)
COLLECTOR CURRENT (AMP)
Figure Base-Emitter Voltage
Figure Collector-Emitter Saturation Region
COLLECTOR CURRENT 150°C 25°C 10-1 -0.4 REVERSE FORWARD -0.2 +0.2 +0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) +0.6 125°C 100°C 75°C 50°C CAPACITANCE (pF)
REVERSE VOLTAGE (VOLTS) 1000 25°C
Figure Collector Cutoff Region
Figure Capacitance
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MJD13003
Table Test Conditions Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA INDUCTIVE SWITCHING RESISTIVE SWITCHING
1N493 TEST CIRCUITS 0.001 DUTY CYCLE 1N493 2N222 MJE21
+125 MR826 Vclamp *SELECTED SCOPE
D.U.T.
2N290
NOTE: Adjusted Desired Adjusted Desired
1N493 0.02
D.U.T. MJE20 -VBE(off)
COIL DATA: FERROXCUBE CORE #6656 FULL BOBBIN (~200 TURNS) IC(pk) Vclamp
mH/2 Lcoil OUTPUT WAVEFORMS
Vclamp
1N5820 EQUIV. +10.3
TEST WAVEFORMS
CIRCUIT VALUES
CLAMPED
ADJUSTED OBTAIN
Lcoil
TEST EQUIPMENT SCOPE-TEKTRONICS EQUIVALENT
-8.5 DUTY CYCLE 1.0% ADJUSTED DESIRED
Lcoil
Vclamp
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MJD13003
ICPK Vclamp Vclamp ICPK Vclamp
TIME
Figure Inductive Switching Measurements Table Typical Inductive Switching Performance
0.23 0.26 0.10 0.13 0.07 0.08 0.30 0.30 0.14 0.26 0.10 0.22 0.35 0.40 0.05 0.06 0.05 0.08 0.30 0.36 0.16 0.29 0.16 0.28 NOTE: Data Recorded Inductive Switching Circuit Table
SWITCHING TIMES NOTE designer, there minimal switching loss during storage time predominant switching power losses occur during crossover interval obtained using equation:
PSWT VCCIC(tc)f
resistive switching circuits, rise, fall, storage times have been defined apply both current voltage waveforms since they phase. However, inductive loads which common SWITCHMODE power supplies hammer drivers, current voltage waveforms phase. Therefore, separate measurements must made each waveform determine total switching time. this reason, following terms have been defined.
Voltage Storage Time, Vclamp Voltage Rise Time, 10-90% Vclamp Current Fall Time, 90-10% Current Tail, 10-2% Crossover Time, Vclamp
general, However, lower test currents this relationship valid. common with most switching transistors, resistive switching specified 25_C become benchmark designers. However, designers high frequency converter circuits, user oriented specifications which make this "SWITCHMODE" transistor inductive switching speeds tsv) which guaranteed 100_C.
enlarged portion inductive switching waveforms shown Figure visual identity these terms.
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MJD13003
RESISTIVE SWITCHING PERFORMANCE
0.07 0.05 0.03 0.02 0.02 0.03 VBE(off) IC/IB 25°C TIME 0.05 0.07 0.02 0.03 0.05 0.07
IC/IB 25°C
COLLECTOR CURRENT (AMP)
COLLECTOR CURRENT (AMP)
Figure Turn-On Time
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure Turn-Off Time
0.05 0.01 SINGLE PULSE RJC(t) r(t) 8.33°C/W CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(pk) P(pk) JC(t) P(pk)
0.07 0.05 0.03 0.02
DUTY CYCLE, t1/t2
0.01 0.01
0.02 0.03
0.05
TIME (ms)
Figure Thermal Response
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MJD13003
Sale Operating Area figures shown Figures specified ratings these devices under test conditions shown. COLLECTOR CURRENT (AMP) 25°C
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
0.05 0.02
SECOND BREAKDOWN LIMIT THERMAL LIMIT 25°C WIRE BOND LIMIT CURVES APPLY RATED VCEO VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.01 0.005
Figure Active Region Safe Operating Area
COLLECTOR CURRENT (AMP)
There limitations power handling ability transistor: average junction temperature second breakdown. Safe operating area curves indicate limits transistor that must observed reliable operation; i.e., transistor must subjected greater dissipation than curves indicate. data Figure based 25_C; TJ(pk) variable depending power level. Second breakdown pulse limits valid duty cycles must derated when 25_C. Allowable current voltages shown Figure found case temperature applying curves Figure TJ(pk) calculated from data Figure high case temperatures, thermal limitations will reduce power that handled values less than limitations imposed second breakdown.
REVERSE BIAS
100°C VBE(off)
inductive loads, high voltage high current must sustained simultaneously during turn-off, most cases, with base emitter junction reverse biased. Under these conditions collector voltage must held safe level below specific value collector current. This accomplished several means such active clamping, snubbing, load line shaping, etc. safe level these devices specified Reverse Bias Safe Operating Area represents voltage-current conditions during reverse biased turn-off. This rating verified under clamped conditions that device never subjected avalanche mode. Figure gives RBSOA characteristics.
POWER DISSIPATION (WATTS)
VCEV, COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS)
Figure Reverse Bias Safe Operating Area
(SURFACE MOUNT)
TEMPERATURE (°C)
Figure Power Derating
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MJD13003
PACKAGE DIMENSIONS CASE 369A-13 ISSUE
SEATING PLANE NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. INCHES 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 0.034 0.040 0.018 0.023 0.102 0.114 0.090 0.175 0.215 0.020 0.050 0.020 -0.030 0.050 0.138 -MILLIMETERS 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 0.87 1.01 0.46 0.58 2.60 2.89 2.29 4.45 5.46 0.51 1.27 0.51 -0.77 1.27 3.51
STYLE
0.13 (0.005)
STYLE
STYLE STYLE STYLE
BASE COLLECTOR EMITTER COLLECTOR
GATE DRAIN SOURCE DRAIN
ANODE CATHODE ANODE CATHODE
CATHODE ANODE GATE ANODE
GATE ANODE CATHODE ANODE
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MJD13003
PACKAGE DIMENSIONS CASE 369-07 ISSUE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. INCHES 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 MILLIMETERS 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27
SEATING PLANE
0.13 (0.005)
STYLE
BASE COLLECTOR EMITTER COLLECTOR
STYLE
GATE DRAIN SOURCE DRAIN
STYLE
ANODE CATHODE ANODE CATHODE
STYLE
CATHODE ANODE GATE ANODE
STYLE
GATE ANODE CATHODE ANODE
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MJD13003
Notes
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MJD13003
Notes
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MJD13003
Semiconductor trademarks Semiconductor Components Industries, (SCILLC). SCILLC reserves right make changes without further notice products herein. SCILLC makes warranty, representation guarantee regarding suitability products particular purpose, does SCILLC assume liability arising application product circuit, specifically disclaims liability, including without limitation special, consequential incidental damages. "Typical" parameters which provided SCILLC data sheets and/or specifications vary different applications actual performance vary over time. operating parameters, including "Typicals" must validated each customer application customer's technical experts. SCILLC does convey license under patent rights rights others. SCILLC products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure SCILLC product could create situation where personal injury death occur. Should Buyer purchase SCILLC products such unintended unauthorized application, Buyer shall indemnify hold SCILLC officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that SCILLC negligent regarding design manufacture part. SCILLC Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment: Literature Distribution Center Semiconductor P.O. 5163, Denver, Colorado 80217 Phone: 303-675-2175 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Response Line: 303-675-2167 800-344-3810 Toll Free USA/Canada American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: Semiconductor European Support German Phone: (+1) 303-308-7140 (Mon-Fri 2:30pm 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (Mon-Fri 2:00pm 7:00pm CET) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (Mon-Fri 12:00pm 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am 5:00pm MST) Email: ONlit-spanish@hibbertco.com Toll-Free from Mexico: Dial 01-800-288-2872 Access then Dial 866-297-9322 ASIA/PACIFIC: Semiconductor Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am 1:00pm, Hong Kong Time) Toll Free from Hong Kong Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com Semiconductor Website: http://onsemi.com additional information, please contact your local Sales Representative.
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MJD13003/D

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