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DPAK Surface Mount Applications This device designed high-voltage
Top Searches for this datasheetHigh Voltage SWITCHMODET Series DPAK Surface Mount Applications This device designed high-voltage, high-speed power switching inductive circuits where fall time critical. particularly suited SWITCHMODE applications such switching regulators, inverters, motor controls, solenoid/relay drivers deflection circuits. MJD13003 SILICON POWER TRANSISTOR AMPERES VOLTS WATTS Lead Formed Surface Mount Applications Plastic Sleeves Suffix) Straight Lead Version Plastic Sleeves ("-1" Suffix) Lead Formed Version Tape Reel ("T4" Suffix) Reverse Biased with Inductive Loads 100_C Inductive Switching Matrix Amp, 100_C 100_C (Typ) Blocking Capability Switching Applications Information Electrically Similar Popular MJE13003 CASE 369A-13 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage VCEO(sus) VCEV VEBO Collector Current Continuous Peak Base Current Continuous Peak 0.75 2.25 Emitter Current Continuous Peak Total Power Dissipation 25_C Derate above 25_C Total Power Dissipation 25_C Derate above 25_C Operating Storage Junction Temperature Range 1.56 0.0125 0.12 Watts W/_C Watts W/_C Tstg +150 CASE 369-07 MINIMUM SIZES RECOMMENDED SURFACE MOUNTED APPLICATIONS 0.190 4.826 Characteristic Symbol Unit Thermal Resistance, Junction Case 8.33 _C/W _C/W Thermal Resistance, Junction Ambient Maximum Lead Temperature Soldering Purposes Pulse Test: Pulse Width Duty Cycle 10%. When surface mounted minimum sizes recommended. SWITCHMODE trademarks Semiconductor, Inc. Semiconductor Components Industries, LLC, 2001 January, 2001 Rev. 0.243 6.172 THERMAL CHARACTERISTICS 0.063 inches PublicMJD13003/D 0.118 0.07 0.165 4.191 Pulse Test: Pulse Width Duty Cycle SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS CHARACTERISTICS SECOND BREAKDOWN CHARACTERISTICS ELECTRICAL CHARACTERISTICS 25_C unless otherwise noted) Fall Time Crossover Time Storage Time Inductive Load, Clamped (Table Figure Fall Time Storage Time Rise Time Delay Time Resistive Load (Table Output Capacitance (VCB Vdc, MHz) Current-Gain Bandwidth Product mAdc, Vdc, MHz) Base-Emitter Saturation Voltage Adc, Adc) Adc, 0.25 Adc) Adc, 0.25 Adc, 100_C) Collector-Emitter Saturation Voltage Adc, Adc) Adc, 0.25 Adc) Adc, Adc) Adc, 0.25 Adc, 100_C) Current Gain Adc, Vdc) Adc, Vdc) Clamped Inductive with Base Reverse Biased Second Breakdown Collector Current with Base Forward Biased Emitter Cutoff Current (VEB Vdc, Collector Cutoff Current (VCEV Rated Value, VBE(off) Vdc) (VCEV Rated Value, VBE(off) Vdc, 100_C) Collector-Emitter Sustaining Voltage Characteristic Vclamp Vdc, VBE(off) Vdc, 100_C Vdc, Duty Cycle http://onsemi.com MJD13003 VCEO(sus) Symbol RBSOA VCE(sat) VBE(sat) IEBO ICEV IS/b Figure Figure 0.15 0.29 0.05 0.75 mAdc mAdc Unit MJD13003 COLLECTOR-EMITTER VOLTAGE (VOLTS) CURRENT GAIN -55°C 0.02 0.03 150°C 25°C 25°C 0.002 0.05 0.07 COLLECTOR CURRENT (AMP) 0.005 0.01 0.02 0.05 BASE CURRENT (AMP) Figure Current Gain Figure Collector Saturation Region VOLTAGE (VOLTS) 0.02 0.03 VBE(sat) IC/IB VBE(on) VOLTAGE (VOLTS) 0.35 0.25 0.15 0.05 0.02 0.03 0.05 0.07 150°C 25°C IC/IB -55°C -55°C 25°C 25°C 150°C 0.05 0.07 COLLECTOR CURRENT (AMP) COLLECTOR CURRENT (AMP) Figure Base-Emitter Voltage Figure Collector-Emitter Saturation Region COLLECTOR CURRENT 150°C 25°C 10-1 -0.4 REVERSE FORWARD -0.2 +0.2 +0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) +0.6 125°C 100°C 75°C 50°C CAPACITANCE (pF) REVERSE VOLTAGE (VOLTS) 1000 25°C Figure Collector Cutoff Region Figure Capacitance http://onsemi.com MJD13003 Table Test Conditions Dynamic Performance REVERSE BIAS SAFE OPERATING AREA INDUCTIVE SWITCHING RESISTIVE SWITCHING 1N493 TEST CIRCUITS 0.001 DUTY CYCLE 1N493 2N222 MJE21 +125 MR826 Vclamp *SELECTED SCOPE D.U.T. 2N290 NOTE: Adjusted Desired Adjusted Desired 1N493 0.02 D.U.T. MJE20 -VBE(off) COIL DATA: FERROXCUBE CORE #6656 FULL BOBBIN (~200 TURNS) IC(pk) Vclamp mH/2 Lcoil OUTPUT WAVEFORMS Vclamp 1N5820 EQUIV. +10.3 TEST WAVEFORMS CIRCUIT VALUES CLAMPED ADJUSTED OBTAIN Lcoil TEST EQUIPMENT SCOPE-TEKTRONICS EQUIVALENT -8.5 DUTY CYCLE 1.0% ADJUSTED DESIRED Lcoil Vclamp http://onsemi.com MJD13003 ICPK Vclamp Vclamp ICPK Vclamp TIME Figure Inductive Switching Measurements Table Typical Inductive Switching Performance 0.23 0.26 0.10 0.13 0.07 0.08 0.30 0.30 0.14 0.26 0.10 0.22 0.35 0.40 0.05 0.06 0.05 0.08 0.30 0.36 0.16 0.29 0.16 0.28 NOTE: Data Recorded Inductive Switching Circuit Table SWITCHING TIMES NOTE designer, there minimal switching loss during storage time predominant switching power losses occur during crossover interval obtained using equation: PSWT VCCIC(tc)f resistive switching circuits, rise, fall, storage times have been defined apply both current voltage waveforms since they phase. However, inductive loads which common SWITCHMODE power supplies hammer drivers, current voltage waveforms phase. Therefore, separate measurements must made each waveform determine total switching time. this reason, following terms have been defined. Voltage Storage Time, Vclamp Voltage Rise Time, 10-90% Vclamp Current Fall Time, 90-10% Current Tail, 10-2% Crossover Time, Vclamp general, However, lower test currents this relationship valid. common with most switching transistors, resistive switching specified 25_C become benchmark designers. However, designers high frequency converter circuits, user oriented specifications which make this "SWITCHMODE" transistor inductive switching speeds tsv) which guaranteed 100_C. enlarged portion inductive switching waveforms shown Figure visual identity these terms. http://onsemi.com MJD13003 RESISTIVE SWITCHING PERFORMANCE 0.07 0.05 0.03 0.02 0.02 0.03 VBE(off) IC/IB 25°C TIME 0.05 0.07 0.02 0.03 0.05 0.07 IC/IB 25°C COLLECTOR CURRENT (AMP) COLLECTOR CURRENT (AMP) Figure Turn-On Time r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure Turn-Off Time 0.05 0.01 SINGLE PULSE RJC(t) r(t) 8.33°C/W CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(pk) P(pk) JC(t) P(pk) 0.07 0.05 0.03 0.02 DUTY CYCLE, t1/t2 0.01 0.01 0.02 0.03 0.05 TIME (ms) Figure Thermal Response http://onsemi.com MJD13003 Sale Operating Area figures shown Figures specified ratings these devices under test conditions shown. COLLECTOR CURRENT (AMP) 25°C SAFE OPERATING AREA INFORMATION FORWARD BIAS 0.05 0.02 SECOND BREAKDOWN LIMIT THERMAL LIMIT 25°C WIRE BOND LIMIT CURVES APPLY RATED VCEO VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.01 0.005 Figure Active Region Safe Operating Area COLLECTOR CURRENT (AMP) There limitations power handling ability transistor: average junction temperature second breakdown. Safe operating area curves indicate limits transistor that must observed reliable operation; i.e., transistor must subjected greater dissipation than curves indicate. data Figure based 25_C; TJ(pk) variable depending power level. Second breakdown pulse limits valid duty cycles must derated when 25_C. Allowable current voltages shown Figure found case temperature applying curves Figure TJ(pk) calculated from data Figure high case temperatures, thermal limitations will reduce power that handled values less than limitations imposed second breakdown. REVERSE BIAS 100°C VBE(off) inductive loads, high voltage high current must sustained simultaneously during turn-off, most cases, with base emitter junction reverse biased. Under these conditions collector voltage must held safe level below specific value collector current. This accomplished several means such active clamping, snubbing, load line shaping, etc. safe level these devices specified Reverse Bias Safe Operating Area represents voltage-current conditions during reverse biased turn-off. This rating verified under clamped conditions that device never subjected avalanche mode. Figure gives RBSOA characteristics. POWER DISSIPATION (WATTS) VCEV, COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS) Figure Reverse Bias Safe Operating Area (SURFACE MOUNT) TEMPERATURE (°C) Figure Power Derating http://onsemi.com MJD13003 PACKAGE DIMENSIONS CASE 369A-13 ISSUE SEATING PLANE NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. INCHES 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 0.034 0.040 0.018 0.023 0.102 0.114 0.090 0.175 0.215 0.020 0.050 0.020 -0.030 0.050 0.138 -MILLIMETERS 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 0.87 1.01 0.46 0.58 2.60 2.89 2.29 4.45 5.46 0.51 1.27 0.51 -0.77 1.27 3.51 STYLE 0.13 (0.005) STYLE STYLE STYLE STYLE BASE COLLECTOR EMITTER COLLECTOR GATE DRAIN SOURCE DRAIN ANODE CATHODE ANODE CATHODE CATHODE ANODE GATE ANODE GATE ANODE CATHODE ANODE http://onsemi.com MJD13003 PACKAGE DIMENSIONS CASE 369-07 ISSUE NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. INCHES 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 MILLIMETERS 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27 SEATING PLANE 0.13 (0.005) STYLE BASE COLLECTOR EMITTER COLLECTOR STYLE GATE DRAIN SOURCE DRAIN STYLE ANODE CATHODE ANODE CATHODE STYLE CATHODE ANODE GATE ANODE STYLE GATE ANODE CATHODE ANODE http://onsemi.com MJD13003 Notes http://onsemi.com MJD13003 Notes http://onsemi.com MJD13003 Semiconductor trademarks Semiconductor Components Industries, (SCILLC). SCILLC reserves right make changes without further notice products herein. SCILLC makes warranty, representation guarantee regarding suitability products particular purpose, does SCILLC assume liability arising application product circuit, specifically disclaims liability, including without limitation special, consequential incidental damages. "Typical" parameters which provided SCILLC data sheets and/or specifications vary different applications actual performance vary over time. operating parameters, including "Typicals" must validated each customer application customer's technical experts. SCILLC does convey license under patent rights rights others. SCILLC products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure SCILLC product could create situation where personal injury death occur. 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