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Fast clock speed: 133, 100, Fast Access Times: 4.0/5.0/6.0 Single Cloc
Top Searches for this datasheetDUAL DUAL ADDRESS SYNCHRONOUS SRAM Fast clock speed: 133, 100, Fast Access Times: 4.0/5.0/6.0 Single Clock Operation Single 3.3V power supply Separate VCCQ output buffer chip enables simple depth expansion Address, Data Input, CE1#, CE2, PTX#, PTY#, WEX#, WEY#, Data Output Registers On-Chip Concurrent Reads Writes Bi-Directional Data Buses Configured Separate Pass-Through Feature Asynchronous Output Enables (OEX#, OEY#) LVTTL Compatible Self-Timed Write Automatic power down 176-Pin TQFP Package GVT8132P36 PIPELINED SRAM SRAM +3.3V SUPPLY, FULLY REGISTERED BI-DIRECTIONAL DATA BUSES GENERAL DESCRIPTION GVT8132P36 SRAM integrates 32,768 SRAM cells with advanced synchronous peripheral circuitry. employs high-speed, power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists four transistors high valued resistors. GVT8132P36 allows user concurrently perform reads, writes, pass-through cycles combination data ports. address ports (AX, determine read write locations their respective data ports (DQX, DQY). input pins except output enable pins (OEX#, OEY#) gated registers controlled positive-edge-triggered clock input (CLK). synchronous inputs include addresses, data inputs, depth-expansion chip enables (CE1#, CE2), pass-through controls (PTX# PTY#), read-write control (WEX# WEY#). pass-through feature allows data passed from port other, either direction. PTX# input must asserted pass data from port port PTY# will likewise pass data from port port pass-through operation takes precedence over read operation. case when same, certain protocols followed. both ports read, reads occur normally. port written other read, read from array will occur before data written. both ports written, only data will written array. GVT8132P36 operate from +3.3V power supply. inputs outputs LVTTL compatible. These dual dual address synchronous SRAMs well suited ATM, Ethernet switches, routers, cell/frame buffers, switches shared memory applications. OPTIONS Timing 4.0ns access/7.5ns cycle 5.0ns access/10.0 cycle 6.0ns access/12.0 cycle Packages 176-pin TQFP MARKING -7.5 Galvantech, Inc. 3080 Oakmead Village Drive, Santa Clara, 95051 (408) 566-0688 (408) 566-0699 Site www.galvantech.com Rev. 12/9 Galvantech, Inc. reserves right chang products specifications without notice. GVT8132P36 PIPELINED SRAM FUNCTIONAL BLOCK DIAGRAM Address Register SRAM Array Address Register WEX# Write Register Write Driver Sensing Amplifiers Sensing Amplifiers Write Driver Write Register WEY# PTX# Register Pass-Through Register PTY# Data Register Output Register Output Register Data Register CE1# Chip Enable Register Chip Enable Register OEX# OEY# September Galvantech, Inc. reserves right change products specifications without notice. Rev. 12/9 GVT8132P36 PIPELINED SRAM ASSIGNMENT (Top View) DQY19 DQX19 VCCQ DQY18 DQX18 OEY# OEX# CE1# WEY# WEX# PTY# PTX# DQX17 DQY17 DQX16 DQY16 DQX20 DQY20 VCCQ DQX21 DQY21 DQX22 DQY22 VCCQ DQX23 DQY23 DQX24 DQY24 VCCQ DQX25 DQY25 DQX26 DQY26 DQY27 DQX27 DQY28 DQX28 VCCQ DQY29 DQX29 DQY30 DQX30 VCCQ DQY31 DQX31 DQY32 DQX32 VCCQ DQY33 DQX33 DQX15 DQY15 VCCQ DQX14 DQY14 DQX13 DQY13 VCCQ DQX12 DQY12 DQX11 DQY11 VCCQ DQX10 DQY10 DQX9 DQY9 DQY8 DQX8 DQY7 DQX7 VCCQ DQY6 DQX6 DQY5 DQX5 VCCQ DQY4 DQX4 DQY3 DQX3 VCCQ DQY2 DQX2 September Rev. 12/9 DQY34 DQX34 VCCQ DQY35 DQX35 AX10 AY10 AX11 AY11 AX12 AY12 AX13 AY13 AX14 AY14 DQX0 DQY0 VCCQ DQX1 DQY1 Galvantech, Inc. reserves right change products specifications without notice. DESCRIPTIONS TQFP PINS 169, 167, 145, 143, 168, 166, 144, 142, 100, 102, 106, 108, 113, 115, 119, 121, 125, 127, 131, 135, 139, 170, 174, 101, 103, 107, 109, 112, 114, 118, 120, 124, 126, 130, 134, 138, 171, 175, GVT8132P36 PIPELINED SRAM SYMBOL AX14 AY14 WEX# WEY# OEX# OEY# DQX0 DQX35 TYPE InputSynchronous DESCRIPTION Synchronous Address Inputs Port allow addresses AX14 floating Synchronous Address Inputs Port allow addresses AY14 floating Read Write Port WEX# signal synchronous input that identifies whether current loaded cycle Read Write operation. Read Write Port WEY# signal synchronous input that identifies whether current loaded cycle Read Write operation. Pass-Through Port PTX# signal synchronous input that enables passing Port input Port output. Pass-Through Port PTY# signal synchronous input that enables passing Port input Port output. Asynchronous Output Enable Port OEX# must read data. When OEX# HIGH, DQXx pins high impedance state. Asynchronous Output Enable Port OEY# must read data. When OEY# HIGH, DQYx pins high impedance state. Data Inputs/Outputs Port Both data input path data output path registered triggered rising edge CLK. InputSynchronous InputSynchronous InputSynchronous InputSynchronous InputSynchronous Input Input Input/ Output DQY0 DQY35 Input/ Output Data Inputs/Outputs Port Both data input path data output path registered triggered rising edge CLK. InputSynchronous Clock: This clock input this device. Except OEX# OEY#, timing references address, data control signals device made with respect rising edge CLK. Synchronous Active Chip Enable Port CE1X# used with CE2X enable Port this device. CE1X# sampled HIGH rising edge clock initiates deselect cycle Port Synchronous Active High Chip Enable Port CE2X used with CE1X# enable Port this device. CE2X sampled rising edge clock initiates deselect cycle Port Power Supply: +3.3V +5%. Ground: GND. CE1# InputSynchronous inputSynchronous 110, 105, 111, 117, 123, 129, 136, 154, 132, 133, 165, 104, 116, 122, 128, 137, 78-81, 140, 141, 157-16 Supply Ground VCCQ Ground Supply Ground: GND. chip current flows through these pins. However, user needs connect these pins. Output Buffer Supply: +3.3V Connect: These signals internally connected. User connect them VCC, VSS, signal lines simply leave them floating. September Galvantech, Inc. reserves right change products specifications without notice. Rev. 12/9 TRUTH TABLE (1-8) OPERATION NUMBER GVT8132P36 PIPELINED SRAM INPUT CLOCK CE1# WEX# WEY# PTX# PTY# OPERATION DESELECT CYCLE DESELECT CYCLE WRITE PORT WRITE PORT PASS-THROUGH from PASS-THROUGH from READ PORT READ PORT Note: means "don't care." means logic HIGH. means logic LOW. inputs except OEX# OEY# must meet setup hold times around rising edge (LOW HIGH) CLK. OEX# OEY# must asserted avoid contention during WRITE PASS-THROUGH cycles. WRITE PASS-THROUGH operation following READ operation, OEX#/OEY# must HIGH before input data required setup time plus High-Z time OEX#/OEY# staying HIGH throughout input data hold time. Operation number used combination. Operation number combined. Operation number combined with operation number because PASS-THROUGH operation higher priority over READ operation. Operation number combined with operation number because PASS-THROUGH operation higher priority over READ operation. This device contains circuitry that will ensure outputs will High-Z during power-up. tn+1 ADDRESS CONTROL VALID PIPELINED READ DATA INPUT VALID PASS-THROUGH DATA OUTPUT VALID September Galvantech, Inc. reserves right change products specifications without notice. Rev. 12/9 ABSOLUTE MAXIMUM RATINGS* Voltage Supply Relative VSS.-0.5V +4.6V .-0.5V VCC+0.5V Storage Temperature (plastic).-55 +125o Temperature Under Bias.-10 Junction Temperature.+125 Power Dissipation.1.6W Short Circuit Output Current.20mA GVT8132P36 PIPELINED SRAM *Stresses greater than those listed under "Absolute Maximum Ratings" cause permanent damage device.This stress rating only functional operation device these other conditions above those indicated operational sections this specification implied. Exposure absolute maximum rating conditions extended periods affect reliability. ELECTRICAL CHARACTERISTICS RECOMMENDED OPERATING CONDITIONS 70°C; 3.3V unless otherwise noted) CONDITIONS Data Inputs (DQxx) Other Inputs DESCRIPTION Input High (Logic Voltage Input (Logic Voltage Input Leakage Current Output Leakage Current Output High Voltage Output Voltage Supply Voltage Supply Voltag SYMBOL -0.5 VCC+0.5 UNITS NOTES Output(s) disabled, -4.0mA 8.0mA 3.3V 3.135 3.135 3.465 3.465 VCCQ DESCRIPTION Power Supply Current: Operating CMOS Standby CONDITIONS Device selected; inputs IH;VCC =MAX; cycle time MIN; outputs open Device deselected; inputs +0.2 -0.2; MAX; cycle time ISB1 -7.5 UNITS NOTES Note: voltages referenced (GND). Overshoot: Undershoot: +6.0V -2.0V given with output current. increases with greater output loading faster cycle times. "Device Deselected" means device POWER -DOWN mode defined truth table. "Device Selected" means device active. September Galvantech, Inc. reserves right change products specifications without notice. Rev. 12/9 ELECTRICAL CHARACTERISTICS (Note GVT8132P36 PIPELINED SRAM 3.3V +5%) 133MHz DESCRIPTION Cloc Clock cycle Clock HIGH time Clock Output Times Clock output valid Clock output invalid Clock output Low-Z Clock output High-Z OEX#/OEY# output valid OEX#/OEY# output Low-Z OEX#/OEY# output High-Z Setup Times Addresses, Controls Data Hold Times Addresses, Controls Data KQLZ tKQH OELZ tOEHZ 100MHz 83MHz UNITS NOTES CAPACITANCE DESCRIPTION Input Capacitance Input/Output Capacitance (DQ) CONDITIONS 3.3V SYMBOL UNITS NOTES THERMAL CONSIDERATIO DESCRIPTION Thermal Resistance Junction Ambient lfm) Single-Layer Board Thermal Resistance Junction Ambient lfm) Four-Layer Board Thermal Resistance Junction Board (Bottom) Thermal Resistance Junction Case (Top) SYMBOL TQFP UNITS NOTES Note: This parameter sampled. Test conditions specified with output loading shown Fig. unless otherwise noted. Output loading specified with CL=5pF Fig. given temperature voltage condition, tKQHZ less than tKQLZ tOEHZ less than tOELZ. This synchronous device. synchronous inputs must meet specified setup hold time, except "don't care" defined truth table. Capacitance derating applies capacitance different from load capacitance shown Fig. September Galvantech, Inc. reserves right change products specifications without notice. Rev. 12/9 TEST CONDITIONS Input pulse levels Input slew rate Input timing reference levels Output reference levels Output load 1.5V/ns 1.5V 1.5V Figures GVT8132P36 PIPELINED SRAM OUTPUT LOADS 1.5V Fig. OUTPUT LOAD EQUIVALENT 3.3v Fig. OUTPUT LOAD EQUIVALENT September Galvantech, Inc. reserves right change products specifications without notice. Rev. 12/9 GVT8132P36 PIPELINED SRAM READ CYCLE TIMING FROM BOTH PORTS (WEX#, WEY#, PTX#, PTY# HIGH PORT OEX# OEHZ (See Note) Q(1) Q(2) Q(3) Q(5) Q(6) Q(7) tOELZ PORT OEY# tKQHZ KQLZ Q(12) Q(13) Q(14) Q(16) Q(6) Q(7) NOTE: means CE1# equals equals HIGH. HIGH means CE1# equals HIGH equals LOW. September Galvantech, Inc. reserves right change products specifications without notice. Rev. 12/9 GVT8132P36 PIPELINED SRAM WRITE CYCLE TIMING BOTH PORTS (PTX#, PTY# HIGH) WEX# PORT OEX# (See Note) D(2) D(3) D(4) D(8) D(9) WEY# PORT OEY# D(14) D(15) D(5) D(6) D(18) D(19) PORT TAKES PRIORITY OVER PORT WHEN AX=AY WRITING BOTH PORTS. Note: means CE1# equals equals HIGH. HIGH means CE1# equals HIGH equals LOW. September Galvantech, Inc. reserves right change products specifications without notice. Rev. 12/9 GVT8132P36 PIPELINED SRAM WRITE PORT PASS-THROUGH PORT (SEE NOTE) WEX# PORT OEX# PTY# (See Note) D(2) D(3) D(X) D(Y) D(6) WEY# PORT OEY# PTY# tKQHZ Q(3) D(X) D(Y) Q(17) Note: means CE1# equals equals HIGH. HIGH means CE1# equals HIGH equals LOW. September Galvantech, Inc. reserves right change products specifications without notice. Rev. 12/9 GVT8132P36 PIPELINED SRAM COMBINATION READ/WRITE WITH SAME ADDRESS EACH PORT WRITE WRITE READ READ READ READ READ READ WEX# PORT OEX# D(ABC) D(DEF) Q(PQR) Q(XYZ) Q(JKL) WRITE WRITE READ READ READ WRITE READ READ WEY# PORT OEY# D(PQR) D(XYZ) Q(PQR) D(JKL) Q(JKL) PORT TAKES PRIORITY OVER PORT WHEN AX=AY WRITING BOTH PORTS. PTX# PTY# HIGH D(Value) Value input data port. Q(Value) Value output data port. September Galvantech, Inc. reserves right change products specifications without notice. Rev. 12/9 TQFP Package Dimensions 26.00 24.00 GVT8132P36 PIPELINED SRAM IDENT 24.00 26.00 1.40 0.05 1.60 Note: dimensions Millimeters 0.50 Basic 0.22 0.05 0.60 0.15 September Galvantech, Inc. reserves right change products specifications without notice. Rev. 12/9 Ordering Information 8132P36 Galvantech Prefix Part Number GVT8132P36 PIPELINED SRAM Speed (7.5 4.0ns access/7.5ns cycle 5.0ns access/10.0ns cycle 6.0ns access/12.0ns cycle) Package TQFP) September Galvantech, Inc. reserves right change products specifications without notice. Rev. 12/9 Other recent searchesTC74VHC165F - TC74VHC165F TC74VHC165F Datasheet TC74VHC165FN - TC74VHC165FN TC74VHC165FN Datasheet TC74VHC165FT - TC74VHC165FT TC74VHC165FT Datasheet TC74VHC165FK - TC74VHC165FK TC74VHC165FK Datasheet MAX3806 - MAX3806 MAX3806 Datasheet HMC265LM3 - HMC265LM3 HMC265LM3 Datasheet FPT-240C-A03 - FPT-240C-A03 FPT-240C-A03 Datasheet FM2500W - FM2500W FM2500W Datasheet EDZ15B - EDZ15B EDZ15B Datasheet
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