TIP145T/146T/147T Monolithic Construction With Built BaseEmitter
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TIP145T/146T/147T
TIP145T/146T/147T
Monolithic Construction With Built BaseEmitter Shunt Resistors
High Current Gain 1000@ (Min.) Industrial Complement TIP140T/141T/142T
TO-220 2.Collector 3.Emitter
1.Base
Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage TIP145T TIP146T TIP147T Value Units
Equivalent Circuit
VCEO VEBO TSTG
Collector-Emitter Voltage TIP145T TIP146T TIP147T Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
0.12
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage TIP145T TIP146T TIP147T Collector Cut-off Current TIP145T TIP146T TIP147T ICBO Collector Cut-off Current TIP145T TIP146T TIP147T IEBO VCE(sat) VBE(sat) VBE(on) tSTG Emitter Cut-off Current Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Delay Time Rise Time Storage Time Fall Time 60V, 80V, 100V, 10mA 10A, 40mA 10A, 40mA 30V, -20mA, 20mA 0.15 0.55 1000
Rev. December 2002
Test Condition 30mA,
Min.
Typ.
Max.
Units
ICEO
30V, 40V, 50V,
©2002 Fairchild Semiconductor Corporation
TIP145T/146T/147T
Typical Characteristics
100000
IC[A], COLLECTOR CURRENT
-2000µA
hFE, CURRENT GAIN
-1800µA -1600µA -1400µA -1200µA -1000µA -800µA
10000
-600µA
1000
-400µA
-0.1
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure Static Characteristic
Figure current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-1000
IC=-500IB
f=0.1MHz
VCE(sat)
Cob[pF], CAPACITANCE
VBE(sat)
-100
-0.1
-0.01 -0.1
-100 -100 -1000
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
Figure Collector Output Capacitance
-100
IC[A], COLLECTOR CURRENT
PC[W], POWER DISSIPATION
TIP145T TIP146T TIP147T
-0.1 -100 -1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
CASE TEMPERATURE
Figure Safe Operating Area
Figure Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. December 2002
TIP145T/146T/147T
Package Dimensions
TO-220
9.90 ±0.20
1.30 ±0.10 2.80 ±0.10
4.50 ±0.20
(8.70) ±0.10
(1.70)
1.30 -0.05
+0.10
9.20 ±0.20
(1.46)
13.08 ±0.20
(1.00)
(3.00)
15.90 ±0.20
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20]
10.08 ±0.30
18.95MAX.
(3.70)
(45°
0.50 -0.05
+0.10
2.40 ±0.20
10.00 ±0.20
Dimensions Millimeters
©2002 Fairchild Semiconductor Corporation Rev. December 2002
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PRODUCT STATUS DEFINITIONS Definition Terms
Datasheet Identification Advance Information Product Status Formative Design First Production Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Preliminary
Identification Needed
Full Production
Obsolete
Production
©2002 Fairchild Semiconductor Corporation
Rev.
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