TIP140F/141F/142F Monolithic Construction With Built BaseEmitter
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TIP140F/141F/142F
TIP140F/141F/142F
Monolithic Construction With Built BaseEmitter Shunt Resistors
Complement TIP145F/146F/147F High Current Gain 1000 (Min.) Industrial
TO-3PF 2.Collector 3.Emitter
Epitaxial Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage TIP140F TIP141F TIP142F Value Units
1.Base
Equivalent Circuit
VCEO VEBO TSTG
Collector-Emitter Voltage TIP140F TIP141F TIP142F Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
0.12
Electrical Characteristics TC=25°C unless otherwise noted
Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage TIP140F TIP141F TIP142F Collector Cut-off Current TIP140F TIP141F TIP142F ICBO Collector Cut-off Current TIP140F TIP141F TIP142F IEBO VCE(sat) VBE(sat) VBE(on) tSTG Emitter Cut-off Current Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Delay Time Rise Time Storage Time Fall Time 60V, 80V, 100V, 10mA 10A, 40mA 10A, 40mA 30V, 20mA, -20mA 0.15 0.55 1000
Rev. December 2002
Test Condition 30mA,
Min.
Typ.
Max.
Units
ICEO
30V, 40V, 50V,
©2002 Fairchild Semiconductor Corporation
TIP140F/141F/142F
Typical Characteristics
2000uA
IC[A], COLLECTOR CURRENT
1800uA 1600uA 1400uA
1200 00uA
100k
800uA 600uA
400uA
hFE, CURRENT GAIN
200uA
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure Static Characteristics
Figure current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
IC=500IB
f=0.1MHz
VBE(sat)
VCE(sat)
Cob[pF], CAPACITANCE
0.01
1000
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure Collector Output Capacitance
IC[A], COLLECTOR CURRENT
PC[W], POWER DISSIPATION
TIP140F TIP141F TIP142F
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
CASE TEMPERATURE
Figure Safe Operating Area
Figure Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. December 2002
TIP140F/141F/142F
Package Dimensions
TO-3PF
5.50 ±0.20
4.50 ±0.20
15.50 ±0.20
±0.20
3.00 ±0.20 (1.50)
10.00 ±0.20
26.50 ±0.20
23.00 ±0.20
16.50 ±0.20
14.50 ±0.20
0.85 ±0.03
16.50 ±0.20
2.00 ±0.20
14.80 ±0.20
2.00 ±0.20 2.00 ±0.20 4.00 ±0.20 0.75 -0.10
+0.20
2.00 ±0.20
2.50 ±0.20
2.00 ±0.20
3.30 ±0.20
5.45TYP [5.45 ±0.30]
5.45TYP [5.45 ±0.30]
0.90 -0.10
+0.20
3.30 ±0.20
2.00 ±0.20
5.50 ±0.20
1.50 ±0.20
Dimensions Millimeters
©2002 Fairchild Semiconductor Corporation Rev. December 2002
22.00 ±0.20
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PRODUCT STATUS DEFINITIONS Definition Terms
Datasheet Identification Advance Information Product Status Formative Design First Production Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Preliminary
Identification Needed
Full Production
Obsolete
Production
©2002 Fairchild Semiconductor Corporation
Rev.
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